DI 380 TRANSISTOR Search Results

transistor ag qs

Abstract: transistor smd hq transistor di 960 TRANSISTOR SMD CODE 6.8
Contextual Info: SIEMENS SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme di//df rated • 150°C operating temperature Type V^DS b SPPX2N60S5 600 V 11.3 A 380 mQ

half bridge smps

Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET welding equipment smps schematic STE36N50-DK h bridge ups circuit schematic diagram STE36N50DK E81743 STE36N50-DA STTA2006P FRM 5 N 144 DS
Contextual Info: STE36N50-DK N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DK V DSS R DS on ID 500 V < 0.14 Ω 36 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DEDICATED FOR POWER FACTOR CORRECTOR APPLICATIONS LOW GATE CHARGE MOSFET

Contextual Info: SIEMENS SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme dv/dt rated • 150°C operating temperature Type ^DS b SPPX2N60S5 600 V 11.3 A 380 m il

half bridge SMPS

Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET STE36N50-DK smps circuit diagram h bridge ups circuit schematic diagram welding equipment smps schematic transistor da 307 STE36N50-DA STTA2006P FRM 5 N 144 DS
Contextual Info: STE36N50-DA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DA V DSS R DS on ID 500 V < 0.14 Ω 36 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ ■ LOW GATE CHARGE MOSFET TURBOSWITCH DIODE INCORPORATED HIGH CURRENT POWER MODULE

A1000-REV00k9040-IE

Abstract: AX-REM01K9050-IE a1000-fia3071-re A1000-FIV3005-RE A1000-REV00k6050-IE A1000FIA3105RE AX-FIM1024-RE
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ignition coil IGBT

Abstract: AN 484-A Motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N40CL Internally Clam ped N-Ctiannel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features G ate-Em itter ESD protection, Gate Collector O verVoltage Protection from monolithic circuitry for usage as an Ignition

irf 540 mosfet

Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

irf 540 mosfet

Abstract: IRFM064
Contextual Info: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.017 Ω IRFM064 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

induction cooking

Abstract: 035H IRG4PH40UD2-EP IRGP30B120KD-E TO247AD package
Contextual Info: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast

Contextual Info: PD- 91777 IRG4PH20KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRG4PH20KD

Contextual Info: PD- 91777 IRG4PH20KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRG4PH20KD

Contextual Info: PD- 91777 IRG4PH20KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

Contextual Info: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast

ST T4 3660

Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
Contextual Info: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast

IRG4PH40UD2-EP

Abstract: 035H IRGP30B120KD-E
Contextual Info: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast

ld smd transistor

Abstract: 78 DIODE SMD KRF2805S 104A smd diode JC 68
Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRF2805S TO-263 Features Unit: mm 1 .2 7 -0+ 0.1.1 Advanced Process Technology Ultra Low On-Resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Dynamic dv/dt Rating 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Repetitive Avalanche Allowed up to Tjmax

ST T4 3660

Abstract: 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking
Contextual Info: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in

IRFM064

Abstract: beryllium oxide international rectifier cds
Contextual Info: Data Sheet No. PD-9.875 INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ64 N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary The HEXFE T® technology is the key to International Part Num ber BV q s S IR F M 0 6 4

AO4850

Contextual Info: AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4850 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs may be used in H-bridge, Inverters and other applications.

Contextual Info: AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4850 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs may be used in H-bridge, Inverters and other applications.

US5U2

Contextual Info: US5U2 Transistors 4V Drive Nch+SBD MOS FET US5U2 zStructure Silicon N-channel MOS FET / Schottky barrier diode zExternal dimensions Unit : mm TUMT5 2.0 0.85Max. 1.7 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 2.1 (5) 0.2 0.65 0.65 zFeatures 1) Nch MOS FET and schottky barrier diode

uL190

Contextual Info: TOSHIBA {DI SC RE TE /OPT O} 9097250 TOSHIBA TT 99D C D ISC RETE/O PTO »FI t OTVESO GGltTG? 16707 UT-39-1I SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-MOS D ) 2 S K 5 3 2 INDUSTRIAL APPLICATIONS Unit in mm

08CNE8N

Abstract: IPP08CNE8N JESD22 PG-TO220-3 D475A C3175
Contextual Info: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature