DIAGRAM POWER SUPPLY LG 32 Search Results

fe 1.1s

Abstract: GM76C512 a 683 transister GM76 GM76C256B GM76C5 cs25-02
Contextual Info: @ LG Semicon. Co., LTD. Description Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle time of 55/70/E&s. The device is placed in a low

GM76C256B

Abstract: GM76C256BLL 22-VCS lg power supply diagram
Contextual Info: @ LG Semicon. Co. LTD Description Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8«m advanced CMOS technology, it provides high speed operation with minimum cycle time of 55/70/85ns. The device is placed in a low

GM76C256cll

Contextual Info: @ LG Semicon. Co., LTD Pin Configuration Description The GM76C256C is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. U sing a 0.8am advanced CMOS technology, it provides high speed operation with minimum cycle time o f 55/70/85ns. The device is placed in a low

WRITE100

Contextual Info: m LG Semicon Co,Ltd, GM76C256CL/CLL-W 32,768 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C256CL/CLL-W is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8wm advanced CMOS technology and operated from a single 2.7V to 5.5V supply.

GM76C256

Abstract: GM76C256C
Contextual Info: GM76C256CL/LL LG Semicon Co.,Ltd. 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM76C256C family is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.6um advanced CMOS technology and operated a single 5.0V supply.

2585Q

Contextual Info: GM76V256CL/LL LG Semicon Co.,Ltd. 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM76V256C family is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.6wm advanced CMOS tech­ nology and operated a single 3.3V supply.

Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM7322130BMS/SG is an 2M x 32 bits Dynamic RAM MODULE w hich is assembled 4 pieces of 2M x 8bit DRAMs in 28 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7322130BMS/SG is

Contextual Info: @ LG Semicon. Co. LTD Description Fin Configuration 32 DIP The GM23C8001B high performance read only memory is organised as 1,048,576 x 8 bits and has an access time of 120ns. It needs no external control clock to assure simple operation. It is designed to be suitable

GM76C256C

Contextual Info: LG Semicon Co.,Ltd. GM76C256CL/LL 32,768 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C256C family is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.6wm advanced CMOS tech­ nology and operated a single 5.0V supply.

ci 740

Contextual Info: @ LG Semicon. Co. LTD. Description Fin Configuration 32 DIP/SOP The GM23C8000A high performance read only memory is organized as 1,048,576 x 8 bits and has an access time of 120/150ns. The GM23C8000A offers automatic power down controlled by the mask programmed CE or CE input. The low power feature

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7321010DS/SG is an 1M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assem bled 8 pieces o f 1M x 4bit EDO DRAMs in 20/26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GM M 7321010DS/SG is

Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM7324200ANS/SG is a 4M x 32 bits Dynamic RAM MODULE which is assembled 8 pieces of 4M x 4bits DRAMs in 24/26 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7324200ANS/SG is

GMM7321000AN

Contextual Info: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is

VM43217805B

Contextual Info: V M 23217805B ,V M 43217805B 2M ,4M x 32-B it Dynamic RAM Module_ VIS H D escription The VM23217805B and VM43217805B are 2M X 32-bit and 4M X 32-bit dynamic RAM modules. It is mounted with 4/8 pieces of 2M x 8 DRAM VG2617805B ,and each in a standard

23C4000

Abstract: ci 0804
Contextual Info: @ LG Semicon. Co. LTD Description Pin Configuration 32 DIP/SOP The GM23C4000A high performance read only memory is organized as 524,288 words by eight bit and has an access time of 120/150ns. It is designed to be compatible with all microprocessors and similar

Contextual Info: @ LG Semicon. Co. LTD Description Pin Configuration 32 DIP/SOP The GM23C8000B high performance read only memory is organised as 1,048,576 x 8 bits and has an access time of 120ns. The GM23C8000B offers automatic power down controlled by the mask programmed CE or CE input. The low power feature

DNR2

Abstract: GE SG80 S1
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7321010ES/SG is an lM x 32 bits D y n a m ic R A M M O D U L E w h ic h is assem bled 8 pieces o f 1M x 4bit EDO DRAMs in 20/26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The G M M 7321010ES/SG is

GMM7324

Abstract: GMM73241 GMM7324100BNS
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7324100BNS/SG is a 4M x 32 bits Dynamic RAM MODULE w hich is assembled 8 pieces of 4M x 4bit DRAMs in 24/26 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7324100BNS/SG is

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7321000CS/SG is an 1M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g

GMM7322000B

Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM7322000BS/SG is a 2M x 32 bits Dynamic RAM MODULE which is assembled 16 pieces of 1M x 4bit DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7322000BS/SG is optimized for

TRF 840

Abstract: GMM7321100BSG
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7321100BS/SG is an lM x 32 bits Dynamic RAM MODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321100BS/SG is

Contextual Info: GM76U256CL/LL LG Semicon Co.,Ltd. 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM76U256C family is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.6wm advanced CMOS tech­ nology and operated a single 3.0V supply.

GMM7322100B

Abstract: GMM7322100BSG
Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM7322100BS/SG is a 2M x 32 bits Dynamic RAM MODULE which is assembled 16 pieces of 1M x 4bit DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7322100BS/SG is optimized for

GMM7321000AN

Contextual Info: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is