DIE CHIP 51 FET Search Results

transistor MWTA 06

Contextual Info: MwT-11 M ic r o w a v e 14 GHz High Power GaAs FET tec h no lo g y l«-75 -*| i«-75 -*| 4> e » W7mi F • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE • 2400 MICRON GATE WIDTH • DIAMOND-LIKE CARBON PASSIVATION

transistor MWTA 06

Abstract: 60/transistor MWTA 06
Contextual Info: M M ic r o w a v e techno lo g y 2 WATT POWER OUTPUT AT 6 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 5 mm GATE WIDTH DIAMOND-UKE CARBON DLC PASSIVATION T - 1 4 12 GHz High Power GaAs FET M • • • • • w M M M « r iÉ n B H iin iÉ É n iD n n n în

Contextual Info: MwT-15 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y rr • • • • +24 dBm OUTPUT POWER AT 12 GHz 9.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH ÏF rr ^ B u d » 1^ 75 241 [T jv y s v y s v y jO

Contextual Info: MwT-13 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o lo g y +28 dBm P-1 dB AT 12 GHz 7 dB GAIN AT 12 GHz HIGH THIRD ORDER INTERCEPT 0.3 MICRON REFRACTORY METAUGOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION 1200 MICRON GATE WIDTH n P J — ^ mm iVYi

Contextual Info: MwT-15 M ic r o w a v e T 26 GHz High Power GaAs FET echnology -»j 50 p • • • • +24 dBm OUTPUT POWER AT 12 GHz 9.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH ÏF j* | ^ 0 M » » j P _ 75 241 _ 72

Contextual Info: M w T -1 6 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y rr • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 900 MICRON GATE WIDTH DIAMOND-UKE CARBON PASSIVATION

transistor MWTA 06

Abstract: mwta 06
Contextual Info: MwT-A11 14 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • • • • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 2400 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION CHOICE OF CHIP AND ONE

IC tt 3034

Abstract: MWT7HP MWT-7 MwT-770 mwt 773 MWT-770HP
Contextual Info: MwT-7 26 GHz Medium Power GaAs FET M ic r o w a v e T e c h n o l o g y n +20 dBm OUTPUT POWER AT 12 GHz EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR APPUCATIONS • 0.3 MICRON REFRACTORY METALJGOLD GATE • 250 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO PACKAGE TYPES

MICRON POWER RESISTOR MLS

Abstract: chip die hp transistor
Contextual Info: MwT-A11 14 GHz High Power GaAs FET MICROWAVE TECHNOLOGY J*- 7S +| • • • rn inmmin 101ini r F Ì - 86 -J 1/1 ''I t- 75 J £ Ì - 186 - * N- + 68 mmt m i 343 - 1 • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN

MwT-671

Abstract: LQD 421 MWT671HP lsoj
Contextual Info: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y 4m * • • • • • • Units in pun 4-50-fc 70 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 900 MICRON GATE WIDTH

Contextual Info: TOSHIBA MICROW AVE POWER MICROWAVE SEMICONDUCTOR GaAs FET JS8851-AS TECHNICAL DATA FEATURES: • ■ H IG H POWER PldB= 2 4 d B m H IG H GAIN G1 d B = 8 dB ■ ■ ■ at f = 15 GHz at f = 15 GHz SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION CHIP FORM S P E C I F I C A T I O N S Ta = 2 5 ° C

Contextual Info: MwT-A7 26 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y n • • • • • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPLICATIONS 0.3 MICRON REFRACTORY METAUGOLD GATE 250 MICRON GATE WIDTH

Contextual Info: MwT-10 40 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y M 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT 4.5 dB NF IN 18-26.5 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAL7GOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION APPLICATIONS UP TO 40 GHz

MwT-770

Abstract: MWT7HP MWT-7 lsoj
Contextual Info: MwT-7 26 GHz Medium Power GaAs FET M ic r o w a v e T e c h n o l o g y Units in jim • • • • • +20 dBm OUTPUT POWER AT 12 GHz EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR APPLICATIONS 0.3 MICRON REFRACTORY METAL/GOLD GATE 250 MICRON GATE WIDTH CHOICE OF CHIP AND TWO

LD 8164

Abstract: ic lg 631
Contextual Info: MwT-9 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y r,!i 6/ löSmmjuir +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES rAï

Contextual Info: MwT-A8 16 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y p -7 5 * j • • > • • • • p -7 5 * J a 0.6 WATT POWER OUTPUT AT 12 GHz +40 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL/GOLD GATE 1200 MICRON GATE WIDTH

RF MESFET S parameters

Contextual Info: MwT-A8 ÛÊVt M ic r o w a v e 16 GHz High Power GaAs FET techno lo g y H 0.6 WATT POWER OUTPUT AT 12 GHz +40 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 1200 MICRON GATE WIDTH DIAMOND-UKE CARBON PASSIVATION CHOICE OF CHIP AND ONE

transistor WT6

Abstract: transistor WT6 45 transistor WT6 Equivalent WT6 transistor 651-220K pin configuration of ic 1496
Contextual Info: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y if 50f| • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH CHOICE OF CHIP AND ONE

Contextual Info: MwT-13 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • • • • • • +28 dBm P-1 dB AT 12 GHz 7 dB GAIN AT 12 GHz HIGH THIRD ORDER INTERCEPT 0.3 MICRON REFRACTORY METAL7GOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION 1200 MICRON GATE WIDTH

A773

Abstract: 5101 fg A773 5 pin
Contextual Info: MwT-A7 26 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPLICATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 250 MICRON GATE WIDTH

NE32000

Abstract: NE32084 NE32083A
Contextual Info: E C/ C A L I F O R N I A NEC 1SE D b42?m4 OQOlbOS r - 3 / - 2 S' 3 NE32000 NE32083A NE32084 LOW COST/LOW NOISE K-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES NE32000 CHIP • LOW NOISE FIGURE 1.2 dB TYP at f = 12 GHz (NE32083A) 1.3 dB TYP at f = 12 GHz (NE32084)

ATF 46100

Abstract: ATF-46100
Contextual Info: HEWLETT-PACKARD/ CMPNTS m blE D H E W LE TT PACKARD • 4 4 4 7 5 3 4 □OD'i'ibG bTO ■ H P A ATF-46100 AT-8161 2-14 GHz Medium Power Gallium Arsenide FET Features • • • Chip Outline High Output Power: 27.0 dBm typical Pi dBat 4 GHz High Gain at 1 dB Compression:

F4029

Contextual Info: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally

Contextual Info: MwT-A9 M ic r o w a v e 18 GHz High Gain, Low Noise GaAs FET tec h no lo g y ri p • • 'f +24.5 dBm OUTPUT POWER AT 12 GHz 9 dB SMALL SIGNAL GAIN AT 12 GHz 1.6 dB NOISE FIGURE AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE