DIE NPN RF Search Results

SST918

Abstract: mmst5424 SST5424
Contextual Info: DIE No. NPN VHF/UHF TRANSISTOR DIE No. C—33 • DESCRIPTION EPITAXIAL PLANAR NPN SILICON TRANSISTOR ■MAXIMUM RATINGS T a= 2 5 ° C Symbol Value Unit Collector-Emitter Voltage VcEO 15 V Collector-Base Voltage VcBO 25 V Emitter-Base Voltage V ebo 2.5 V

Transistor 2N3866

Abstract: 2N3866 2N3866 application note RF 2N3866 CP223 CP-22-3 chip die npn transistor chip die transistor
Contextual Info: PROCESS CP223 Central Small Signal Transistor TM Semiconductor Corp. NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.5 MILS DIAMETER Emitter Bonding Pad Area 3.5 x 3.5 MILS

CM5943

Abstract: CP243 chip die npn transistor chip die transistor
Contextual Info: PROCESS CP243 Central Small Signal Transistor TM Semiconductor Corp. NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.4 MILS DIAMETER Emitter Bonding Pad Area 3.4 x 3.4 MILS

2N5109

Abstract: NPN planar RF transistor CP229 chip die npn transistor chip die transistor
Contextual Info: PROCESS CP229 Small Signal Transistors NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 8.7 MILS Base Bonding Pad Area 3.2 MILS Diameter Emitter Bonding Pad Area 3.4 x 3.4 MILS Top Side Metalization

SILICON TRANSISTOR CORP

Abstract: MPSH10 datasheet CMPTH10 CP302 MPSH10 MPSH11 chip die npn transistor
Contextual Info: PROCESS CP302 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS

2N5109

Abstract: CP214 2N5109B chip die npn transistor chip die transistor
Contextual Info: PROCESS CP214 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.5 MILS Base Bonding Pad Area 2.9 x 3.4 MILS Emitter Bonding Pad Area 2.9 x 3.4 MILS

ny transistor

Abstract: 2N5770 2N2857 2n918 die 2N918 2N5179 2N2857 DIE PN3564 PN3563 BFY90
Contextual Info: PROCESS CP317 Central Small Signal Transistor TM Semiconductor Corp. NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS

transistor r 53

Abstract: MPSH10 datasheet MPSH10 mpsh10 data sheet CMPTH10 CP302 MPSH11 chip die npn transistor chip die transistor MPSH10 die
Contextual Info: PROCESS CP302 Small Signal Transistor NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS Top Side Metalization

RF 2N3866

Abstract: Transistor 2N3866 2N3866 CP205 chip die npn transistor die bonding
Contextual Info: PROCESS Central CP205 TM Small Signal Transistors Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 15 x 15 MILS DIE THICKNESS 7.5 MILS BASE BONDING PAD AREA 2.0 x 2.4 MILS EMITTER BONDING PAD AREA 2.0 x 2.7 MILS

Contextual Info: Ï4 MOTOROLA SC -CMODES/OPTÔ} dËT| bBbTaSS □03flDbfl 3 6367255 MOTOROLA SC DIODES/OPTO 34C 38068 SILICON RF TRANSISTOR DICE (continued) 2C5946 DIE NO. — NPN LINE SOURCE — RF605.452 This die provides performance equal to or better than that of the following device types:

PN3563 equivalent

Abstract: 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317
Contextual Info: PROCESS CP317 Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization Al - 30,000Å

transistor SMD 12E

Abstract: SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36
Contextual Info: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3

MRF515

Abstract: motorola MRF515 radiosonde motorola MRF627 MRF905 MRF626
Contextual Info: MOTOROLA SC C DIODES/OPTO} 34 DE |L.3t>75S5 003fi0Tl 1 34t 3 8 t m 3 6367255 MOTOROLA SC DIODES/OPTO ° SILICON RF TRANSISTOR DICE (continued) MRFC515 DIE NO. — NPN LINE SOURCE — RF502.83 This die provides performance equal to or better than that of

SMD 6PIN IC MARKING CODE

Abstract: marking code CB SMD ic TRANSISTOR SMD MARKING CODE ce ce BFS469L6 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE ad BFR460L3 BFR949L3 BFS360L6 marking code CB SMD tr2
Contextual Info: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3

marking code CB SMD tr2

Abstract: TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c
Contextual Info: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3

MRF8003

Abstract: citizen mhz
Contextual Info: i SILICON RF TRANSISTOR DICE continued MRFC8003 die no. — npn LINE SOURCE — RF502.147 This die provides performance equal to or better than that of the following device types: MRF8003 Designed for use in citizen-band amplifiers up to 30 MHz. High breakdown voltages allow a high

High Speed Switches

Abstract: MOTOROLA LINEAR HF
Contextual Info: M O T O R O L A SC -CDIODES/OPTOJ j 6367255 MOTOROLA SC 34 b3b75SS CDIODES/O PTO 34C QDSflOb^ 38069 D -ip , ^ 3 SILICON RF TRANSISTOR DICE continued) 2C5947 DIE NO. — NPN LINE SOURCE — RF502.80 & This die provides performance equal to or better than that of

MRF323

Contextual Info: MOTORO LA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC 34 CDIODES/OPTO DE | b B b 7 E S S 003Ô0SL, S | ~ 3^C 38086 SILICON RF TRANSISTOR DICE continued) MRFC323 die no. — npn LINE SOURCE — RF605.762 This die provides performance equal to or better than that of

SILICON SMALL-SIGNAL DICE

Abstract: SILICON DICE motorola
Contextual Info: I m ! 6367255 MOTOROLA SC DE^b3b?ass D IODES/OPTO dd 34C SILICON RF TRANSISTOR DICE (continued) 3ögöd 38080 7 “- j m |~ D tr BFRC91 DIE NO. — NPN LINE SOURCE — RF502.104 This die provides performance equal to or better than that of the following device types:

2N5945 Motorola

Contextual Info: 34 MOTOROLA SC -CDIODES/OPTOÏ Î 6367255 ' * MOTOROLA SC D E | b3L7E55 □□3flQb7 1 <D I O D E S / O PTO 34C 38067 D SILICON RF TRANSISTOR DICE continued) 2C5945 DIE NO. — NPN LINE SOURCE — RF605.451 This die provides performance equal to or better than that of

MRF221

Abstract: mrf433 2N6081 2C6081
Contextual Info: M O T O R O L A SC -CDIODES/OPTO} i 6367255 MOTOROLA SC 34 DE~|fc.3fc.7a5S 34c DIO DES/OPTO 003Ö071 38071 SILICON RF TRANSISTOR DICE (continued) 2C6081 DIE NO. — NPN LINE SOURCE — RF605.419 This die provides performance equal to or better than that of

MRF2947RA

Abstract: MRF2947 MRF2947AT1 MRF2947RAT1 microlab SC-70ML
Contextual Info: MOTOROLA Order this document by MRF2947/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF2947AT1,T2 Low Noise Transistors MRF2947RAT1,T2 Motorola’s MRF2947 device contains two high performance, low–noise NPN silicon bipolar transistors. This device has two 941 die housed in the high

MRF406 MOTOROLA

Abstract: MRF406
Contextual Info: MOTOROL A SC -CDI0DES/0PT03- 1 '6367255 MOTOROLA 34 SC DE | b 3 h 7 S S S 003fl0afl DIODES/OPTO 34C 38088 T~33-/3 SILICON RF^t N a NSISTOR DICE: (continued) MRFC406 DIE NO. — NPN LINE SOURCE — RF605.417 This die provides performance equal to or better than that of

MRF8004

Abstract: citizen mhz motorola opto SILICON DICE motorola
Contextual Info: * MOTOROLA Î SC -CDI0DES/0PT03- 6367255 MOTOROLA SC 34 DE | t , 3 b ? 5 S S D IO D ES/O PTO 3 4C □ G 3 ö G clö 38098 D SILICON RF TRANSISTOR DICE (continued) MRFC8004 DIE NO. — NPN LINE SOURCE — RF502.148 A This die provides performance equal to or better than that of