DIFFERENCE BETWEEN CMOS A AND B SERIES Search Results

Contextual Info: S-5470 Series www.sii-ic.com ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC Rev.1.1_00 Seiko Instruments Inc., 2012 The S-5470 Series, developed by CMOS technology, is a photocurrent detection IC with an ultra-low current consumption. It detects 0.7 nA typ. photocurrent generated by an external photodiode PD or LED. It also has a function to detect the

S-5470A21I

Abstract: S5470 D1R100 s5470c21
Contextual Info: S-5470 Series www.sii-ic.com ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC Rev.1.2_00 Seiko Instruments Inc., 2012 The S-5470 Series, developed by CMOS technology, is a photocurrent detection IC with an ultra-low current consumption. It detects 0.7 nA typ. photocurrent generated by an external photodiode PD or LED. It also has a function to detect the

Contextual Info: Mini-spectrometer TG series C9406GC, C9913GC, C9914GB For near IR, integrating optical system, image sensor and circuit HAMAMATSU TG series mini-spectrometers are polychromators integrated with optical elements and an image sensor. Light to be measured is guided into the entrance port of TG series through an optical fiber and the spectrum measured with the builtin image sensor is output from the USB port to a PC for data acquisition. Non-cooled type and cooled type are provided. Noncooled type is a palmtop-size unit and operates on USB bus power. Cooled type allows accurate measurement with low noise

Linear Image sensor IC

Abstract: G9212-512S C7557 C8061-01 C8062-01 G9205 G9211 G9211-256S VREF256
Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS

UB261

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UB261 Preliminary CMOS IC 1-CELL LITHIUM-ION/POLYMER BATTERY PROTECTION IC  DESCRIPTION The UTC UB261 is a series of lithium-ion/lithium-polymer rechargeable battery protection ICs incorporating high accuracy voltage detection circuits and delay circuits.

Difference between LS, HC, HCT devices

Abstract: TC4S69F Small Signal Zener Diod difference between 74ls and 74hc ic TC74HC04
Contextual Info: C2MOS Logic TC74HC/HCT Series 9. Precautions in Designing Circuits 9-1 Input Processing 1 Processing of unused gate Inputs of CMOS IC have such a high impedance that the logic level becomes undefined under open conditions. If the input is at an intermediate level, the P-channel and Nchannel transistors both turn on, and excessive supply

applications 4046b

Abstract: unbuffered cmos logic application note 4001UB UNBUFFERED-CD400IUB RCA CD4069UB CD4001* using NAND gates 4011UB CD4007 ICAN-6558 CD4002UB
Contextual Info: ICAN-6558 Understanding Buffered and Unbuffered CMOS Characteristics by R. E. Funk INTRODUCTION Both buffered and unbuffered CMOS B-series gates, inverters, and high-current IC products are available from RCA; each pro­ duct classification has application advantages

Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an

unbuffered cmos logic application note

Abstract: cmos ic and gates datasheet cmos ic cd4001 BE Harris an6558 SCHA004 cmos ic cd4001 data sheet ic cd4001 datasheet 4011UB RCA CD4069UB applications 4046b
Contextual Info: Application Report SCHA004 - October 2002 Understanding Buffered and Unbuffered CD4xxxB Series Device Characteristics R. E. Funk Standard Linear & Logic ABSTRACT Both buffered and unbuffered CMOS B-series gates, inverters, and high-current IC products are available from TI. Each product classification has application advantages in appropriate

Contextual Info: InGaAs linear image sensors G9201 to G9204 series Image sensor for DWDM wavelength monitor The G9201 to G9204 series are InGaAs linear image sensors designed for WDM monitor detectors in optical communications. These linear image sensors contain a CMOS charge amplifier array, a CDS circuit, an offset compensation circuit, a shift register and a timing generator, along with an InGaAs photodiode array, and deliver high sensitivity and stable operation in the near infrared range.

InGaAs photodiode array chip

Abstract: InP Photonics G9201
Contextual Info: InGaAs linear image sensors G9201 to G9204 series Image sensor for DWDM wavelength monitor The G9201 to G9204 series are InGaAs linear image sensors designed for WDM monitor detectors in optical communications. These linear image sensors contain a CMOS charge amplifier array, a CDS circuit, an offset compensation circuit, a shift register and a timing generator, along with an InGaAs photodiode array, and deliver high sensitivity and stable operation in the near infrared range.

NPSF T1

Abstract: NPSF T1 source 14 pin cmos IMAGE SENSOR G9204 C7557-01 C8061-01 G9201 G9201-256S G9202-512S G9203-256D
Contextual Info: InGaAs linear image sensors G9201 to G9204 series Image sensor for DWDM wavelength monitor The G9201 to G9204 series are InGaAs linear image sensors designed for WDM monitor detectors in optical communications. These linear image sensors contain a CMOS charge amplifier array, a CDS circuit, an offset compensation circuit, a shift register and a timing generator, along with an InGaAs photodiode array, and deliver high sensitivity and stable operation in the near infrared range.

Contextual Info: InGaAs linear image sensors G9201 to G9204 series Image sensor for DWDM wavelength monitor The G9201 to G9204 series are InGaAs linear image sensors designed for WDM monitor detectors in optical communications. These linear image sensors contain a CMOS charge amplifier array, a CDS circuit, an offset compensation circuit, a shift register

Contextual Info: Mini-spectrometer TG series C11713CA C11714CA High resolution type spectral resolution: 0.3 nm The C11713CA and C11714CA are polychromators integrated with optical elements, an image sensor and a driver circuit. Light to be measured is guided into the entrance port of TG series through an optical fiber and the spectrum measured with

Contextual Info: Mini-spectrometers MS series C10988MA-01 C11708MA Ultra-compact mini-spectrometer integrating MEMS and image sensor technologies The MS series are thumb-sized 27.6 x 16.8 × 13 mm spectrometer heads developed for installation into mobile measurement equipment by merging our MEMS and image sensor technologies.

Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 m The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an

Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UB211C Preliminary CMOS IC 1 -CELL LI T H I U M -I ON /POLY M ER BAT T ERY PROT ECT I ON I C ̈ DESCRI PT I ON UTC UB211C is a series of lithium-ion / lithium-polymer rechargeable battery protection ICs incorporating high accuracy

G9205

Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UB211C Preliminary CMOS IC 1-CELL LITHIUM-ION/POLYMER BATTERY PROTECTION IC „ DESCRIPTION UTC UB211C is a series of lithium-ion / lithium-polymer rechargeable battery protection ICs incorporating high accuracy voltage detection circuits and delay circuits.

S-5816A

Abstract: S-5815A S-5815A-H4T1 S-5816A-H4T1
Contextual Info: Rev.1.1_01 S-5815A/5816A Series CMOS TEMPERATURE SENSOR IC The S-5815A/5816A Series is a family of high-precision temperature sensor ICs on a single chip with a linear output voltage for temperature changes. Each chip is composed of a temperature sensor, a constant current

Contextual Info: Rev.1.1_00 S-5815A/5816A Series CMOS TEMPERATURE SENSOR IC The S-5815A/5816A Series is a family of high-precision temperature sensor ICs on a single chip with a linear output voltage for temperature changes. Each chip is composed of a temperature sensor, a constant current

5814A

Abstract: S-5813A S-5813A-I4T1G S-5814A S-5814A-I4T1G S581
Contextual Info: Rev.1.2_00 S-5813A/5814A Series CMOS TEMPERATURE SENSOR IC The S-5813A/5814A Series is a family of high-precision temperature sensor ICs on a single chip with a linear output voltage for temperature changes. Each chip is composed of a temperature sensor, a constant current

Contextual Info: Rev.1.1_00 S-5813A/5814A Series CMOS TEMPERATURE SENSOR IC The S-5813A/5814A Series is a family of high-precision temperature sensor ICs on a single chip with a linear output voltage for temperature changes. Each chip is composed of a temperature sensor, a constant current