DIM200 Search Results

DIM200MKS12-A000

Abstract: DS-5552
Contextual Info: DIM200MKS12-A000 DIM200MKS12-A000 IGBT Chopper Module Replaces November 2002, issue DS5552-1.2 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5552-1.2 November 2002 KEY PARAMETERS VCES typ VCE(sat)*

was dual transistor

Abstract: DIM200MBS12-A000
Contextual Info: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue May 2002, version DS5543-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5545-2.1 June 2002 KEY PARAMETERS VDRM

DIM200WLS17-A000

Abstract: 12v AC to DC CIRCUIT DIAGRAM transistor 9009
Contextual Info: DIM200WLS17-A000 Chopper Module - Lower Arm Control DS5698-1.2 July 2007 LN25358 FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand Lead Free construction KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) 1700V

DIM200WKS17-A000

Abstract: transistor 9009
Contextual Info: DIM200WKS17-A000 Chopper Module - Upper Arm Control DS5699-1.2 July 2007 LN25361 FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand Lead Free construction KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) 1700V

DIM200PLM33-F000

Contextual Info: DIM200PLM33-F000 . IGBT Chopper Module DS5864- 1.1 June 2008 LN26121 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated AlSiC Base with AlN substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) • High thermal cycling capability

DIM200PHM33-F000

Contextual Info: DIM200PHM33-F000 DIM200PHM33-F000 Half Bridge IGBT Module PDS5606-2.1 June 2003 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability APPLICATIONS ■ High Reliability Inverters

DIM200PHM33-F000

Abstract: DIM200PHM33-F
Contextual Info: DIM200PHM33-F000 Half Bridge IGBT Module Replaces DS5606-4 DS5606-5 October 2011 LN28814 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)

bi-directional switches IGBT

Abstract: DIM200MBS12-A000 7404* 15v
Contextual Info: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Preliminary Information DS5545-1.3 May 2002 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon KEY PARAMETERS VDRM typ VT (max) IC (max) IC(PK) ±1200V 4.3V 200A 400A

DIM200PKM33-F000

Abstract: DIM200PKM33-F
Contextual Info: DIM200PKM33-F000 IGBT Chopper Module Replaces DS5865-2 DS5865-3 October 2011 LN28813 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)

DIM200PHM33-A000

Abstract: tc 2608
Contextual Info: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces May 2002, version DS5464-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS

ac chopper circuit

Abstract: bi-directional switches IGBT igbt for HIGH POWER induction heating induction heat circuit induction heating control circuit diagram Material Handling Systems DIM200WKS12-A000 fds5969
Contextual Info: DIM200WKS12-A000 DIM200WKS12-A000 IGBT Chopper Module - Upper Arm Control Replaces December 2003 version, issue FDS5969-1.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate PDS5969-2.0 February 2004 KEY PARAMETERS

Contextual Info: DIM200WHS17-E000 DIM200WHS17-E000 Half Bridge IGBT Module PDS5662-2.0 October 2003 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM200WLS12-A000 DIM200WLS12-A000 IGBT Chopper Module - Lower Arm Control Replaces DIM200MLS12-A000 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5697-1.1 December 2003 KEY PARAMETERS VCES typ VCE(sat)*

DIM200XCM65-F000

Abstract: IGBT 6500v E 13005 TRANSISTOR
Contextual Info: Preliminary information DIM200XCM65-F000 IGBT Chopper Module DS5955-1 December 2009 LN26955 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

Contextual Info: DIM200PHM33-F000 Half Bridge IGBT Module Replaces DS5606-4 DS5606-5 October 2011 LN28814 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)

DIM200WKS12-A000

Contextual Info: DIM200WKS12-A000 DIM200WKS12-A000 IGBT Chopper Module - Upper Arm Control Replaces February 2004 version, issue PDS5969-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5969-3.0 June 2004 KEY PARAMETERS

Contextual Info: DIM200BSS12-E000 DIM200BSS12-E000 Single Switch IGBT Module PDS5704-1.1 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

transistor 9003

Contextual Info: DIM200WHS12-A000 DIM200WHS12-A000 Half Bridge IGBT Module Replaces DIM200MHS12-A000 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5671-2.2 December 2003 KEY PARAMETERS VCES typ VCE(sat)* (max) IC

600v 400a IGBT driver

Contextual Info: DIM200BSS17-E000 DIM200BSS17-E000 Single Switch IGBT Module PDS5668-1.0 October 2003 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

M6831

Abstract: IC 7424
Contextual Info: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue August 2003, version DS5543-3.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5545-4.0 September 2003 KEY PARAMETERS

Contextual Info: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue July 2003, version DS5543-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5545-3.1 August 2003 KEY PARAMETERS VDRM

basic single phase ac motor reverse forward circuit diagram

Abstract: bidirectional switch igbt matrix converter
Contextual Info: DIM200WBS12-A000 Single Switch IGBT Module DS5862-1.1 FEB. 2006 FEATURES • 10 µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VT typ IC (max) IC(PK) (max) (LN24465)

not gate ic 7404

Abstract: DIM200MHS17-A000 7404* 15v
Contextual Info: DIM200MHS17-A000 DIM200MHS17-A000 Half Bridge IGBT Module Replaces issue February 2002, version DS5459-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base DS5459-4.0 March 2002 KEY PARAMETERS VCES typ VCE(sat) *

INFORMATION OF IC 7424

Abstract: 9C1S DIM200MKS12-A000 GP200MKS12
Contextual Info: DIM200MKS12-A000 DIM200MKS12-A000 IGBT Chopper Module Preliminary Information Replaces GP200MKS12 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5552-1.1 November 2002 KEY PARAMETERS VCES typ VCE(sat)*