DIM400 Search Results

DIM400DDM12-A000

Abstract: DS5532-3
Contextual Info: DIM400DDM12-A000 DIM400DDM12-A000 Dual Switch IGBT Module Replaces July 2002, version DS5532-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5532-3.0 March 2003

DIM400GCM33-A000

Contextual Info: DIM400GCM33-A000 DIM400GCM33-A000 IGBT Chopper Module DS5613-1.1 June 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat *

DIM400DDS17-A000

Contextual Info: DIM400DDS17-A000 Dual Switch IGBT Module DS5859-1.0 June 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN24024)

bi-directional switches IGBT

Abstract: DIM400PBM17-A000
Contextual Info: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module DS5524-2.3 June 2008 LN26123 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

DIM400WHS12-A000

Contextual Info: DIM400WHS12-A000 Half Bridge IGBT Module DS5689-3.1 July 2007 LN25350 FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand KEY PARAMETERS VCES VCE (sat) (typ) IC (max) IC(PK) (max) 1200V 2.2 V 400A 800A Lead Free construction

DIM400XCM33-F000

Contextual Info: DIM400XCM33-F000 IGBT Chopper Module DS5938-1.0 February 2009 LN26594 FEATURES Soft Punch Through Silicon Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8 V 400A

DIM400BSS12-A000

Contextual Info: DIM400BSS12-A000 Single Switch IGBT Module DS5672-4.1 June 2007 LN25349 FEATURES 10 s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK) (max) 1200V 2.2 V 400A 800A *(Measured at the power bus-bars and not the auxiliary

DIM400BSS17-A000

Contextual Info: DIM400BSS17-A000 DIM400BSS17-A000 Single Switch IGBT Module FDS5674-2.2 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V

DIM400DDM12-A000

Contextual Info: DIM400DDM12-A000 DIM400DDM12-A000 Dual Switch IGBT Module Preliminary Information DS5532-1.2 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

DIM400LSS17-A000

Contextual Info: DIM400LSS17-A000 DIM400LSS17-A000 Single Switch IGBT Module Replaces issue February 2002, version DS5497-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base DS5497-3.0 March 2002 KEY PARAMETERS VCES typ VCE(sat) *

DIM400GDM33-F000

Abstract: 110nF
Contextual Info: DIM400GDM33-F000 DIM400GDM33-F000 Dual Switch IGBT Module PDS5616-1.1 June 2003 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat *

DIM400XSM45-TS001

Contextual Info: Data DIM400XSM45-TS001 Single Switch IGBT Module Replaces DS6149-1 DS6149-2 August 2014 LN31876 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)

DIM400XSM45-TS000

Contextual Info: Data DIM400XSM45-TS000 Single Switch IGBT Module Replaces DS6150-1 DS6150-2 August 2014 LN31872 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ)

DIM400LSS17-A000

Contextual Info: DIM400LSS17-A000 DIM400LSS17-A000 Single Switch IGBT Module Replaces issue MArch 2002, version DS5497-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate DS5497-4.1 June 2002 KEY PARAMETERS VCES typ

Contextual Info: DIM400WLS12-A000 DIM400WLS12-A000 IGBT Chopper Module - Lower Arm Control DS5747-2.0 May 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V

DIM400GCM33-F000

Contextual Info: . DIM400GCM33-F000 IGBT Chopper Module DS5863- 1.0 September 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated AlSiC Base with AlN substrates • High thermal cycling capability KEY PARAMETERS VCES VCE sat * (typ)

IFM VS 0100

Contextual Info: DIM400WHS17-E000 DIM400WHS17-E000 Half Bridge IGBT Module PDS5665-1.1 October 2003 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM400LSS17-A000 DIM400LSS17-A000 Single Switch IGBT Module Replaces issue June 2002, version DS5497-4.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate FDS5497-5.0 July 2003 KEY PARAMETERS VCES typ

Contextual Info: DIM400LSS12-A000 DIM400LSS12-A000 Single Switch IGBT Module Replaces March 2003, version DS5534-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5534-4.0 July 2003 KEY PARAMETERS VCES typ VCE(sat)*

Contextual Info: Preliminary Information Data DIM400XCM45-TS001 IGBT Chopper Module DS6110-1 June 2013 LN30638 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 

Contextual Info: DIM400NSM33-F000 Single Switch IGBT Module Replaces DS5883-3 DS5883-4 October 2011 LN28811 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

12v to 1000v inverters circuit diagrams

Abstract: bi-directional switches IGBT DIM400LSS12-A000 6x55 diode IC LM 2003
Contextual Info: DIM400LSS12-A000 DIM400LSS12-A000 Single Switch IGBT Module Replaces June 2002, version DS5534-2.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5534-3.0 March 2003 KEY PARAMETERS VCES typ VCE(sat)*

HALF BRIDGE MOTOR MODULE

Abstract: bi-directional switches IGBT DIM400PHM17-A000
Contextual Info: DIM400PHM17-A000 DIM400PHM17-A000 Half Bridge IGBT Module DS5561-1.1 September 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ

Contextual Info: DIM400NSM33-F000 Single Switch IGBT Module DS5883-1.0 March 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS