DIN 41870 Search Results

Contextual Info: SFH483 SIEMENS FEATURES • Highly efficient GaAIAs LED • Anode electrically connected to case • High pulse power • High reliability • DIN humidity category per DIN 40040 GOG • Matches BPX63, BP103, LD242, SFH464, photodetectors • Package - TO -18,18 A3 DIN 41870

Contextual Info: SFH 216 SIEMENS SILICON PIN PHOTODIODE FEATURES Maximum Ratings * Package: 18 A3 DIN 41870 T018 , Glass Lens, Hermetically Sealed, Solder Tabs, Lead Spacing 0.1 ' (2.54 mm) O perating and Storage Tem perature Range (T0P T stg ) . - 40" 10 +80"C

Contextual Info: SIEMENS SFH 212 SILICON PHOTODIODE VERY LOW DARK CURRENT FEATURES Maximum Ratings * Package: 18 A3 DIN 41870 T 018 , Glass Lens, Hermetically Sealed, Solder Tabs, Lead Spacing 0.1 * (2.54 mm) Operating and Storage Temperature Range (T0P Ts tg ) -4 0 " to +80“C

Siemens photodiode visible light

Abstract: SFH 212 T018 T-2856
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E D 0235b05 002?4b7 T • S I E G SIEMENS SFH 212 SILICON PHOTODIODE VERY LOW DARK CURRENT FEATURES Maximum Ratings * Package: 18 A3 DIN 41870 TO18 , G lass Lens, Hermetically Sealed Package, Solder Tabs, Lead Spacing 2.54 mm (1/«0

10D3

Abstract: 1G14 C 337-40
Contextual Info: NPN TRANSISTORS ITT SEMICOND/ INTERMET ALL 3ME D • 4böH711 0002443 5 ■ ISI T - 3 i - o \ NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 ='TO-92 . On special request, these transistors will also be produced with TO -18 pin configuration.

BC250A

Contextual Info: PNP TRANSISTORS ITT SEP1IC0ND/ INTERMET ALL 3ME D MbfiSTll QQQ5MM5 L, ISI 7 - 3 l - o i PN P Silico n Transistors with plastic package 10D3 according to DIN 41870 =»TO-92 . On special request, these transistors w ill also be produced with TO-18 pin configura­

Contextual Info: SIEMENS SFH 212 SILICON PHOTODIODE VERY LOW DARK CURRENT FEATURES Maximum Ratings • Package: 18 A3 DIN 41870 T 018 , Glass Lens, Hermetically Sealed, Solder Tabs, Lead Spacing 0.1* (2.54 mm) O perating and Storage Tem perature R ange (T0 p, Ts tg ) - 4 0 " to +80°C

BC856B TO-92

Contextual Info: I T T CORP/ I T T CHPNTS MIE II • Mt82bflM OQOiMOa 4 ■ IT O PNP TRAN SISTO RS PNP Silicon Transistors with plastic package 10D3 according to DIN 41870 -TO-92 . On special request, these transistors will also be produced with TO-18 pin configura­ tion.

SMD BOOK

Abstract: smd 842 SMD Packages TQFP Package 44 lead 20B40 P-MQFP-44-2 P-MQFP-144-1 SMD Devices smd transistor marking 26 MARKING BOOK
Contextual Info: Package Outlines Plastic Package, P-DIP-40 Plastic Dual In-Line Package 20B40 DIN 41870 T10 Plastic Package, P-LCC-28-1 (Plastic Leaded Chip Carrier) – SMD Plastic Package, P-LCC-44-1 (Plastic Leaded Chip Carrier) – SMD Plastic Package, P-LCC-68 (Plastic Leaded Chip Carrier) – SMD

BC337 noise

Contextual Info: I T T CO R P / I T T CMPNTS 41E D B 4bñ2bñ4 OGGlMOl 2 • ITO - - p - 3 \ - c t O " “ NPN TRANSISTORS NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 =TO-92 . On special request, these transistors will also be produced with TO-18 pin configuration.

BC170C

Abstract: BC170B "bc170c"
Contextual Info: 4 68 4 9 5 5 I T T SEMICONDUCTORS_ NPN TRANSISTORS a? de| 87D 02320 ¿7 - D 2 ^/ □ □ □5 3 e d 3 f mlsmtss NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 -TO-92 . On special request, these transistors will also be produced with TO-18 pin configura­

flux F-SW32

Abstract: C42315-A1353-A3 PBTp-GF30 C42315-A60-A2 smd diode code Bek siemens spc2 C42315-A60-A3 SPC266 smd a68 F2955
Contextual Info: Schalter und Tasten Switches and Pushbuttons Datenbuch Data Book Contents Typenübersicht Qualitätssicherungssystem Begriffsbestimmungen und Erläuterungen Verarbeitungshinweise Summary of available types Quality assurance System Definitions and remarks Notes on processing

em 483

Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter 00.45 SFH 483 Chip position I Anode LD 242, BPX63, SFH 464 Cathode (SFH 483) Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale

Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter 2.7 00.45 SFH 483 Chip position A CO 1 -; o o 3.6 ‘i 1.0 Anode LD 242, BPX 63, SFH 464 Cathode (SFH 483) Approx. weight 0.5 g IO C\J CO CO o M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified.

SFH 462

Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter SFH 483 M aße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • GaAIAs-IR-Lumineszenzdiode mit hohem Wirkungsgrad • Die Anode ist galvanisch mit dem

E7800

Abstract: GET06625 Q62703-Q1090
Contextual Info: 2.7 Chip position ø4.3 ø4.1 14.5 12.5 1 1.1 .9 2.54 mm spacing ø0.45 SFH 483 1 0.9 .1 GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter ø5.5 ø5.2 3.6 3.0 GET06625 Anode LD 242, BPX 63, SFH 464 Cathode (SFH 483) fet06625 Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: Infrarot-LED mit hoher Ausgangsleistung High Power Infrared LED Lead Pb Free Product - RoHS Compliant SFH 4850 E7800 preliminary data / vorläufige Daten Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung • Anode galvanisch mit dem Gehäuseboden

BPX osram

Abstract: E7800
Contextual Info: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter SFH 483 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger

BS192

Abstract: BS212 D 92 M - 03 DIODE D 92 M - 02 DIODE 10D3 2n3904, itt c 92 M - 02 DIODE bs189
Contextual Info: I T T CORP/ I T T CMPNTS 31E D • 4böEböH ÜQQ1 3 Q 7 T ■ VMOS NPN AND PNP TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETsfeaturing high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown, no thermal runaway.

LME7800

Contextual Info: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter SFH 483 L/M E7800 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger

E7800

Abstract: GETY6625 OHLY0598 measurement of humidity in das
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4850 E7800 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung

SFH483ME7800

Abstract: SFH483-M sfh483m E7800 LME7800
Contextual Info: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit

Contextual Info: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit

E7800

Abstract: GETY6625 OHLY0598
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4850 E7800 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung