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    DIOD 20A 600V Search Results

    DIOD 20A 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIOD 20A 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    400HZ

    Abstract: IRGBC20SD2 igbt 200V 5A t4vd
    Text: PD-9.1544 IRGBC20SD2 PROVISIONAL Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V • Switching-loss rating includes all 'tail' losses • HEXFREDTM soft ultrafast diodes • Optimized for line frequency operation to 400HZ


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    PDF IRGBC20SD2 400HZ) O-220AB 400HZ IRGBC20SD2 igbt 200V 5A t4vd

    irg4bc40u

    Abstract: transistor IR 840 ED50I
    Text: PD - 9.1456D IRG4BC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF 1456D IRG4BC40U O-220AB O-220AB irg4bc40u transistor IR 840 ED50I

    IRGBC20SD2

    Abstract: RY-W 400HZ
    Text: Previous Datasheet Index Next Data Sheet PD-9.1544 IRGBC20SD2 PROVISIONAL Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V • Switching-loss rating includes all 'tail' losses • HEXFREDTM soft ultrafast diodes


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    PDF IRGBC20SD2 400HZ) IRGBC20SD2 RY-W 400HZ

    IRG4PC40U

    Abstract: E4020
    Text: PD - 9.1466D IRG4PC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF 1466D IRG4PC40U O-247AC O-247AC IRG4PC40U E4020

    IRG4PC40U

    Abstract: No abstract text available
    Text: PD - 9.1466C IRG4PC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF 1466C IRG4PC40U O-247AC O-247AC IRG4PC40U

    IRG4PC40U

    Abstract: S3000
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1466C IRG4PC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF 1466C IRG4PC40U O-247AC IRG4PC40U S3000

    ROHM BP5053-12 circuit diagrams

    Abstract: BP5053-12 CMF01 311VDC
    Text: BP5053-12 Non-isolated AC/DC converter Dimensions Unit : mm Absolute Maximum Ratings Conditions DC Refer to derating curve Ambient temperature + the module self-heating Tcmax PEAK value of current C mA 10.1MAX. 28.2MAX. Marking Side Marking Side Unit V C


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    PDF BP5053-12 25MAX. 55MAX. 250mA ROHM BP5053-12 circuit diagrams BP5053-12 CMF01 311VDC

    BP5053-12

    Abstract: ROHM BP5053-12 circuit diagrams TOSHIBA DIODE CATALOG TOP MARKING C1 ROHM ZNR 20 CMF01 diod 20a 600v rectifier diod 250 A ZNR Power
    Text: BP5053-12 Non-isolated AC/DC converter Dimensions Unit : mm Absolute Maximum Ratings Conditions DC Refer to derating curve Ambient temperature + the module self-heating Tcmax PEAK value of current C mA 10.1MAX. 28.2MAX. Marking Side Marking Side Unit V C


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    PDF BP5053-12 25MAX. 55MAX. 250mA BP5053-12 ROHM BP5053-12 circuit diagrams TOSHIBA DIODE CATALOG TOP MARKING C1 ROHM ZNR 20 CMF01 diod 20a 600v rectifier diod 250 A ZNR Power

    transistor 415

    Abstract: diode 500A transistor working principle STTA806D AN-603 STTA2006P transistor 600v 500a transistor 2N2
    Text:  APPLICATION NOTE TURBOSWITCH TM IN A PFC BOOST CONVERTER B. Rivet 1.INTRODUCTION 2.PARAMETERS DEFINITION SGS-THOMSON offers two families of 600V ultrafast diodes TURBOSWITCH”A” and ”B” having different compromises between the forward c h a ra ct e ris t ic s a n d t h e re v e rs e re c ov ery


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    Untitled

    Abstract: No abstract text available
    Text: PD - 94383 IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF IRGS15B60KD IRGSL15B60KD O-262

    Untitled

    Abstract: No abstract text available
    Text: PD - 94382 IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF IRGS10B60KD IRGSL10B60KD IRGS10B60KD O-262 IRGSL10B60KD

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    dinverter 768r

    Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF HEF4527BT HEF4531BT HEF4534BP HEF4534BT MSP-STK430X320 AD9054/PCB AD9054BST-135 IPS521G IPS521S IRL2203S dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601

    MOSFET 4407

    Abstract: IRF9460 ir2110 class d amp irfp460 ir2110 AN-941 IRFP450 inverter irfp450 mosfet full bridge ir2110 with calculations for inverter full bridge ir2110 4407 mosfet
    Text: INT990 Application Characterization of IGBTs HEXFRED is a trademark of International Rectifier Topics Covered: Gate drive for IGBTs Safe Operating Area Conduction losses Statistical models Switching losses Device selection and optimization Spreadsheets to calculate power losses and junction temperature


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    PDF INT990 INT-983, MOSFET 4407 IRF9460 ir2110 class d amp irfp460 ir2110 AN-941 IRFP450 inverter irfp450 mosfet full bridge ir2110 with calculations for inverter full bridge ir2110 4407 mosfet

    MOSFET 4407

    Abstract: ir2110 class d amp IRFP450 inverter irfp460 ir2110 Class d IR2110 inverter ic 3524 application ir2110 with calculations for inverter BJT with V-I characteristics INT-983 Inverter IR2110
    Text: Application Note AN-990 Application Characterization of IGBTs Table of Contents Page I. Gate Drive Requirements . 1 I. A Impact of the impedance of the gate drive circuit on switching losses. 1


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    PDF AN-990 MOSFET 4407 ir2110 class d amp IRFP450 inverter irfp460 ir2110 Class d IR2110 inverter ic 3524 application ir2110 with calculations for inverter BJT with V-I characteristics INT-983 Inverter IR2110

    IRF9460

    Abstract: ir2110 spice IR2110 IGBT DRIVER irfp460 ir2110 INT-983 IRGP50S ir2110 with calculations for 3 phase inverter IR2121 irfp450 mosfet IRCPC50F
    Text: Application Note AN-990 Application Characterization of IGBTs Table of Contents Page I. Gate Drive Requirements . 1 I. A Impact of the impedance of the gate drive circuit on switching losses. 1


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    PDF AN-990 IRF9460 ir2110 spice IR2110 IGBT DRIVER irfp460 ir2110 INT-983 IRGP50S ir2110 with calculations for 3 phase inverter IR2121 irfp450 mosfet IRCPC50F

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


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    STTA2006M

    Abstract: smd transistor p3
    Text: f Z 7 SCS-THOMSON Ä 7#@¡*fô smi(g¥[MO S _ STTA2006M ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av 20A V rrm 600V trr (typ) 30ns V f (max) 1.5 V FEATURES AND BENEFITS • SPECIFIC TO “FREEWHEEL MODE” OPERA­ TIONS: Freewheel or Booster Diode.


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    PDF STTA2006M associat9001000 0Qb0113 STTA2006M smd transistor p3

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor


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    PDF CM20TF-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e ­ signed fo r use in sw itching a pp li­ cations. Each m odule consists of six IGBTs in a three phase bridge configuration, w ith each tran sistor


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    PDF CM20TF-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM10MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE CM10MD-12H t/ • ' X lili — li, W sm * \ mM 1 '1C. 10A 1V c e s . 600V


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    PDF CM10MD-12H E80276 E80271

    50DY24H

    Abstract: 50DY-24H
    Text: MITSUBISHI IGBT MODULES CM50DY-24H MEDIUM POWER SWITCHING USE INSULATED TYPE I Description: M itsubishi IGBT M odules are d e ­ signed fo r use in sw itching app lica ­ tions. Each m odule consists of tw o IGBTs in a half-bridge configuration w ith each tra n sisto r having a reverse-connected su pe r-fa st recov­


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    PDF CM50DY-24H 50DY24H 50DY-24H

    ST diod

    Abstract: Diode IOR 10 dc
    Text: | . I PD- 5041 In terna tional TOR Rectifier preliminary CPV364M4 U IGBT SIP MODULE UltraFast IGBT Features • • • • Fully isolated printed circu it board m ount package S w itch in g-lo ss rating includes all "tail" losses HEXFRED so ft u ltra fa st diod es


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    PDF CPV364M4 ST diod Diode IOR 10 dc