DIOD BRIDGE Search Results

VD42

Contextual Info: CD42_ _90 _ CD47 90_ / owerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diodß POW-R-BLOK Module 90 Amperes/1600 Volts TO CD42_ _90, CD47_ _90 SCR/Diode POW-R-BLOK™ Module

500mA H-bridge

Abstract: CS-3710M15
Contextual Info: CS-3710 0.5A Fully Protected Dual H-Bridge Driver D escription The CS-3710 is a smart dual 0.5A Hbridge driver u sed in microprocessor controlled stepper motor system s. The CS-3710 provides bidirectional current using tw o independent 0.5A H -bridge drivers. On chip com m utation diod es

dioda bridge

Contextual Info: CM4208A2 Powerex, Inc., 200 HHIis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diodß POW-R-BLOK Modules 25 Amperes/800 Volts Description: Powerex SCR/Diode POW-R-BLOK™ Modules are designed for use in applications requiring Half-Control and

HA 2800

Contextual Info: S IE M E N S BSM 150 GB 100 D IGBT Module Preliminary Data VCE = 1000 V /c =2x150 A • • • • • Power m odule H alf-bridge Inclu ding fast free-w heel diod es Package with insulated metal base plate C icruit diagram : Fig. 5 a ' Type Ordering code

Contextual Info: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diod Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode

BSM50GB100D

Abstract: BSM50GB100 50GB100D 50GB 100D
Contextual Info: SIEMENS BSM 50 GB 100 D IGBT Module Preliminary Data VCE = 1000 V /c =2x50 A • • • • • Power m odule H alf-bridge Including fast free-w heel diod es Package with insulated m etal base plate C ircuit diagram : Fig . 2 b 1 Type Ordering code BSM 5 0 G B 100D

Contextual Info: S I E ME NS IG B T M o d u le BSM 2 5 G B 100 D Preliminary Data VCB = 1000 V /c =2x25 A • • • • • Power m odule H alf-bridge Including fast free-w heel diod es Package with insulated metal base plate C ircuit diagram : Fig. 2 b ' Type Ordering code

D3SBA60

Contextual Info: -7u?ÿ*r*-K 5 W- f Bridge Diod& •' - S in g le In -lin e P a c k a g e ^ O U T L IN E D IM E N S IO N S D3SBAD fife • 7 7 X g ^ W Type No., Class p-y ^ 6 ±w ' Date code t*^*| .6I0J~ 25±OJ 600V 4A C3 y 03SBA 60 es : + - 9 - ~ 2.7t0-* <B © QJtoi

Contextual Info: Property http://semicon.sanyo. com/en/search/property.php?clcd=149&prod=DBA250G SANYO Semiconductor Co., Ltd. S A \Y O Rectifying Diodes—Single-Phase Bridge Rectifying Diodes □ sp lay a list Discret e Devices Prod uct Information Type No. DBA250G Category

Contextual Info: MICRO QUALITY / DIB SEM IC O N D U C TO R , INC. .8 Amp Dual In-Line Bridge, Fast Recovery VM-X Series For Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V V RRM Ratings 25 Amps Peak One Half Cycle Surge Current Glass Passivated Diodes Standard .1 0 "— 2,54M M Dip Lead Spacing

1N5829

Contextual Info: 1N5829,1N5830 1N5831 MBR5831H, HI gl MOTOROLA l t ‘w i{ ïin « r s D a t a S h e e t H O T C A R R IE R P O W E R R E C T IF IE R S S C H O T T K Y B A R R IE R R E C T IF IE R S . e m p lo y in g th e S c h o ttk y B a rrie r p r in c ip le in a la rg e area m e ta lto -s ih c o n p o w e r diod e. S ta te -o f- th e -a rt g e o m e try fe a tu re s e p ita x ia l

36-16n08

Contextual Info: □ IX Y S VBO 36 Single Phase Rectifier Bridge V RSM V 1200 1400 1600 1800 V RRM 1200 1400 1600 1800 VBO VBO VBO VBO 36-12N08 36-14N08 36-16N08 36-18N08 ^dAVM Tc = 85°C , m odule Tc = 62°C , m odule Maximum Ratings 550 600 A A T"vj = Tvjm V R= 0 t = 10 ms 50 Hz , sine

Contextual Info: M ICRO Q U A L IT Y / 1 /lD S E M IC O N D U C T O R , INC. .8 Amp Dual In-Line Bridge, Fast Recovery, Surface Mount T \T T l For Surface Mount, Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V V RRM Ratings 25 Amps Peak One Half Cycle Surge Current

EAL diod

Abstract: B54S
Contextual Info: MICRO QUALITY / DIB Schottky S E M IC O N D U C T O R , IN C . 750 mA Dual In-Line Bridge v s b -s Series For Surface Mount Applications 20V, 30V, and 40V V RHM Ratings .65 Volts V F Per Diode at 750 mA Standard ,10"-2,54M M Lead Spacing Moisture Resistant Epoxy Case

jantx diodes

Abstract: 4833
Contextual Info: RECTIFIER ASSEMBLIES JANTX 483-1 JANTX 483-2 JANTX 483-3 Three Phase Bridges, 25 Amp, Military Approved FEATURES D E S C R IPT IO N • • • • • • • This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type

Contextual Info: Three Phase Rectifier Bridge IdAV - 85 A VRRM =800-1600 V Preliminary data V RSM V RRM V V 900 1300 1500 1700 800 1200 1400 1600 VUO VUO VUO VUO 85-08N07 85-12N07 85-14N07 85-16N07 Symbol Test Conditions *d A V Tc U sM l2t -o A Types = Maximum Ratings 1 0 0 °C , m odule

SWITCHING TRANSISTOR C144

Abstract: transistor c144 C144 TRANSISTOR RESISTOR C144 TRANSISTOR SWITCHING TRANSISTOR C145 LDO PCB Layout Guidelines C144 ESR c144 fet AN1989 Meggitt CGS
Contextual Info: Freescale Semiconductor, Inc. Application Note AN1989 Rev 0, 03/2004 Freescale Semiconductor, Inc. MC3371 and MC33702 Components Selection Guidelines by: Monirat Ung, System Engineer Transportation and Standard Products Group Toulouse, France Abstract MC33701and MC33702 devices are 2 cost effective DC/DC converter solutions

Contextual Info: MOTOROLA Order this document by MMSF3300/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3300 WaveFET Power Surface Mount Products T HDTMOS Single N-Channel Field Effect Transistor u T SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 m fl TMOS W aveFET™ de vice s are an ad van ced se rie s of po w e r M O SFETs w h ich utilize M o to ro la ’s

RBV1000

Abstract: RBV1010 1001RBV
Contextual Info: 5YNSEMI SEMICONDUCTOR RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts lo : 10 Amperes 3.9 ± 0.2C3 , 30 ± 0.3 4.9 ± 0.2 - P= K-H FE A TU R E S : * * * * * * * * 0 3.2 ± 0.1 High current capability High surge current capability

Diod UG

Contextual Info: MOTOROLA Order this document by MMSF3205/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3205 Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS RDS on = 0.015 OHM

33153

Contextual Info: O rder this docum ent by M C33153/D MOTOROLA M C33153 Single IGBT G ate Driver T he M C 3 31 53 is spe cifica lly d e sig ned as an IG BT d rive r for high po w e r a p plicatio ns tha t in clud e ac indu ction m otor control, bru shless d c m otor con tro l and un in te rru p ta b le po w e r supplies. A ltho ug h d e sig ned for driving

Contextual Info: CA3140, CA3140A h a r ® J S E M I C O N D U C T O R • M M ■ 4 .5 MHz, BiMOS Operational Amplifier November 1996 with M OSFET Input/Bipolar Output Features Description • MOSFET Input Stage The CA3140A and CA3140 are integrated circuit operational ampli­

ITRON DC 205

Abstract: SF3305
Contextual Info: MOTOROLA Order this document by MMSF3305/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3305 Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 8 AMPERES 30 VOLTS W aveFET devices are an advanced series of pow er M O SFETs

Contextual Info: HbflbBEb G0Dlb77 OS'i H I X Y d ix y s Thyristor Modules MCC132 iTAV= 2 x 130 A Thyristor/Diode Modules MCD132 vRRM= 600-1800 v Vr w V o *. V Vm Vmm V Type Version 1 Version 1 700 900 1300 1500 1700 1900 600 800 1200 1400 1600 1800* M C C 132-06io1 M C C 132-06io1