DIODE 10 35L Search Results

IR135LM06CS02

Contextual Info: Preliminary Data Sheet 10127J 09/97 International IQ R Rectifier i r i 35LM06CS02Cb FAST RECOVERY DIODE Junction Size: R e c ta n g u la r 1 35 x 100 m ils W afer Size: 4" VRRM Class: 6 00 V Passivation Process: G la s s iv a te d M O A T Reference IR Packaged Part: 8 E W F .S S e rie s

simbol

Abstract: seiko year date code
Contextual Info: Rev.1.2 S-35L12A REAL-TIME CLOCK S-35L12A is a CMOS real-time clock IC, which is designed to transfer or set each data of a clock and calendar as requested by a CPU. The S-35L12A is interfaced with a CPU via three wires. Two systems of an interrupt/alarm function and 32 kHz-fixed clock output make it easy to

S-35L12A

Abstract: S-35L12AEFS transistor* xf 12 SSOP10
Contextual Info: Rev. 1.3_00 S-35L12A REAL-TIME CLOCK OD UC T S-35L12A is a CMOS real-time clock IC, which is designed to transfer or set each data of a clock and calendar as requested by CPU. The S-35L12A is interfaced with CPU via three wires. Two systems of an interrupt/alarm function and 32 kHz-fixed clock

pin abbreviation

Abstract: fire alarm system SSOP10 Package transistor* xf 12 S-35L12A S-35L12AEFS SSOP10
Contextual Info: Rev. 1.3_00 S-35L12A REAL-TIME CLOCK S-35L12A is a CMOS real-time clock IC, which is designed to transfer or set each data of a clock and calendar as requested by CPU. The S-35L12A is interfaced with CPU via three wires. Two systems of an interrupt/alarm function and 32 kHz-fixed clock

Contextual Info: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 3800 28x103 1.7 0.457 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4511 Doc. No. 5SYA1234-02 April 04 • High snubberless turn off rating • Optimized for medium frequency (<1kHz) and

IGCT thyristor

Contextual Info: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-02 April 04 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100Hz) and wide

IGCT thyristor ABB

Abstract: IGCT IGCT high high power igct abb abb thyristor control unit IGCT thyristor current max igct application
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 3800 28x103 1.7 0.457 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4511 Doc. No. 5SYA1234-02 June 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

Contextual Info: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 Doc. No. 5SYA1232-02 April 04 • High snubberless turn off rating • Optimized for medium frequency (<1kHz) and

IGCT thyristor ABB

Abstract: high power igct abb IGCT thyristor current max igct application 35L4512
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-02 June 07 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and

half hour delay circuit

Abstract: trimer S-35L12AEFS S-35L32A SSOP10 ic 4001
Contextual Info: Rev. 1.3_00 S-35L32A REAL-TIME CLOCK S-35L32A is a CMOS real-time clock IC supporting an 2 I C-BUS, which is designed to transfer or set each data of a clock and calendar as requested by a CPU. 2 The S-35L32A is interfaced with a CPU via two wires I CBUS . Two systems of an interrupt/alarm function and 32

A125

Abstract: B125 C125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb high power igct abb igct application
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 3800 28x103 1.7 0.457 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4511 Doc. No. 5SYA1234-02 June 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

ABB 163410

Abstract: 5SHY 35L4510 igct application
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 Doc. No. 5SYA1232-03 May 08 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

5SYA1232-02

Abstract: 35L4510 A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 Doc. No. 5SYA1232-02 June 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

IGCT

Abstract: igct application
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-03 May 08 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and

A125

Abstract: B125 C125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-02 June 07 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and

35L4520

Abstract: IGCT high voltage
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4520 Doc. No. 5SYA1248-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency  High electromagnetic immunity

35L4522

Abstract: high power igct abb
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4522 Doc. No. 5SYA1249-00 Feb.12 • High snubberless turn-off rating  Optimizedfor low frequency  High electromagnetic immunity

Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V mW V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4520 Doc. No. 5SYA1248-01 July 14 • High snubberless turn-off rating · Optimized for medium frequency · High electromagnetic immunity

S-35L32A

Abstract: seiko 64 s chip transistor* xf 12 half hour delay circuit S-35L12AEFS SSOP10 DS-VT-200
Contextual Info: Rev. 1.3_00 S-35L32A REAL-TIME CLOCK OD UC T S-35L32A is a CMOS real-time clock IC supporting an 2 I C-BUS, which is designed to transfer or set each data of a clock and calendar as requested by a CPU. 2 The S-35L32A is interfaced with a CPU via two wires I CBUS . Two systems of an interrupt/alarm function and 32

HFBR-2521Z

Abstract: 6227-1 j-900 HFBR-1528Z
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4521 Doc. No. 5SYA1253-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency  High electromagnetic immunity

Archer phototransistor 276-142

Abstract: SFH300-2 08VT83B 276-130 IF-C-E1000 optical fiber IF-C-E1000 phototransistor sensitive to red light IF-D92 SFH300 IFCE1000
Contextual Info: SCIENCE PROJECT KIT THINGS TO DO IN FIBER OPTICS Supplemental Information • • Parts list Component data • Errata sheet INDUSTRIAL FIBER OPTICS IF-E33 Component list Quantity Part Number Description 1 08VT83B Cadmium sulfide photocell 1 35LS026 2.0 volt penlight

MA164

Abstract: MA373 7400 fan-in MA154 T-42-11-05
Contextual Info: RAYTHEON-. 7597360 SEMICONDUCTOR RAYTHEON/ bb Î Ë | ?ST?3t.O 0 D D S D S 7 SEMICONDUCTOR Preliminary Product Specifications Configurable G ate Arrays 66C T 05057 - 7-U - C G A 50L15/35L12 Raytheon CGA 50L15/35L12 Oxide Isolated ISL Bipolar Gate Arrays

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: IGCT 10 kw schematic induction heating "the calculation of the power dissipation for the igbt and the inverse diode in circuits" IGCT thyristor calculation of IGBT snubber snubber IGCT IEGT abb press-pack igbt igbt inverter schematic induction heating
Contextual Info: Positive development in power electronics New 5.2kV Extra Fast Recovery Diode for IGBT and IGCT Applications. New 5.2 kV Extra Fast Recovery Diode for IGBT and IGCT Applications A. Golland, F. J. Wakeman, G. Li Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK

diode sy 170

Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
Contextual Info: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno­ logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.