DIODE 100 KV Search Results

10MHZ

Abstract: CT10 KV1402 ct125
Contextual Info: KV1402 SILICON VARACTOR DIODE DESCRIPTION: PACKAGE STYLE 15 The ASI KV1402 is a Hyperbrupt Tunning Varactor Diode designed for Applications from audio frequencies to 100 MHz FEATURES: • Hermetically Sealed Package • Medium Tunning Range MAXIMUM RATINGS

Contextual Info: BYV32E-100 Dual rugged ultrafast rectifier diode, 20 A, 100 V Rev. 04 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits ̈ High thermal cycling performance

Contextual Info: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 100 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung

Contextual Info: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 100 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung

BYV32E

Abstract: BYV32E-100 BYV32EB
Contextual Info: BYV32E-100 Dual rugged ultrafast rectifier diode, 20 A, 100 V Rev. 04 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits „ High reverse voltage surge capability

darlington opto coupler

Abstract: FCD850 FCD850C FCD855 FCD855C opto 4N33
Contextual Info: CouplersTransistor Output Cont’d Max Ratings (a! TA 25°C Diode Transistor ic VCEO V Vr V mA V iso kV 1.5 Device No. PD mW ÏIL111 ! TIL112 TIL114 « TIL115 TIL116 TIL117 TIL118 250 — 30 3.0 100 250 — 20 3.0 100 1.5 250 — 30 3.0 100 2.5 250 — 20

CPC7557

Contextual Info: CPC7557 Diode Bridge INTEGRATED CIRCUITS DIVISION Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on IXYS Integrated Circuits Division’s High Voltage SOI

Contextual Info: CPC7557 Diode Bridge Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on Clare’s High Voltage SOI technology. Features Ordering Information • Monolithic Construction

LS4448W

Contextual Info: LITE-ON SEMICONDUCTOR LS4448W REVERSE VOLTAGE - 100 V POWER DISSIPATION - 400 mW SURFACE MOUNT FAST SWITCHING DIODE FEATURES 1206 For surface mounted application Silicon epitaxial planar diode High speed switching Ultra small surface mount package Low leakage current

LS4148W

Contextual Info: LITE-ON SEMICONDUCTOR LS4148W REVERSE VOLTAGE - 100 V POWER DISSIPATION - 400 mW SURFACE MOUNT FAST SWITCHING DIODE FEATURES 1206 For surface mounted application Silicon epitaxial planar diode High speed switching Ultra small surface mount package Low leakage current

Contextual Info: CPC7557 Diode Bridge Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on Clare’s High Voltage SOI technology. Features • Monolithic Construction • Surface Mount Package

Contextual Info: CPC7557 Diode Bridge Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on Clare’s High Voltage SOI technology. Features • Monolithic Construction • Surface Mount Package

JESD-625

Abstract: EIA-481-2 J-STD-033
Contextual Info: CPC7557 Diode Bridge Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on Clare’s High Voltage SOI technology. Features • Monolithic Construction • Surface Mount Package

Contextual Info: TVS Diode Arrays SPA Family of Products Lightning Surge Protection - SP03A-3.3 Series SP03A-3.3 Series 3.3V 150A Diode Array RoHS Pb GREEN This SP03A provides overvoltage protection for applications such as 10/100/1000 BaseT Ethernet, and T3/E3 interfaces.

Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection - SP03-3.3 Series SP03-3.3 Series 3.3V 150A Diode Array RoHS Pb GREEN This new broadband protection device from Littelfuse provides overvoltage protection for applications such as 10/100/1000 BaseT Ethernet, T3/E3 DS3 interfaces,

Contextual Info: TO -22 AC BYW29E-100 Ultrafast power diode 17 September 2013 Product data sheet 1. General description Ultrafast power diode in a SOD59 2-lead TO-220AC plastic package. 2. Features and benefits • • • • • • • Fast switching Guaranteed ESD capability

Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection - SP03-3.3 Series SP03-3.3 Series 3.3V 150A Diode Array RoHS Pb GREEN This new broadband protection device from Littelfuse provides overvoltage protection for applications such as 10/100/1000 BaseT Ethernet, T3/E3 DS3 interfaces,

TIL111 equivalent

Abstract: TIL119 equivalent TIL112 equivalent TIL112 TIL119 MCT2E equivalent TIL 143 TIL113 H11A2 H11B1
Contextual Info: 1-20 Max Ratings @ T * = 25°C Device No. Output Pd mW T ransistor >C v CEO mA V Coupled C haracteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @Vce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

1431 transistor equivalent

Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

phototransistor til 33

Abstract: TIL112 TIL111 Til 160 h11a H11A1 H11A2 H11B1 TIL116 H11D2
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

MCT2E equivalent

Abstract: mct2e MCT2E connection diagram ic MCT2e Til 160 TIL111 equivalent MCT2E characteristics TIL112 equivalent TIL112 MCT26
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

TIL112

Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

TIL112

Abstract: Phototransistor til 81 OF til 81 TIL115 TIL 143 TIL 115 H11A1 H11A2 H11B1 H11D2
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

H11A1

Abstract: H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255 MCT26
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60