DIODE 1079 Search Results

Contextual Info: ON Semiconductort Silicon Tuning Diode MMBV432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top−of−the−line application requiring back−to−back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT−23 plastic package for

D4457N

Abstract: D2228N D448N D5807N D5809N D758N KC30 613
Contextual Info: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]

Z1073

Abstract: z1071 z1072 DIODE BZX C9VI Z1075 83C12 83C10 83C13 DIODE BZX 83
Contextual Info: BZX83 Silicon Z diode for 500 mW BZX 83 is an epitaxial silicon planar Z diode in a glass case 56 A 2 DIN 41883 D O -35 . It is used for the stabilization and limitation of voltages as well as for the generation of reference voltages at low power requirements.

D2228N

Abstract: D448N D5809N D758N thyristor 1651
Contextual Info: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl

BC237

Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

3C91C

Abstract: 3C92C 3c92
Contextual Info: 3C91C/ 3C92C TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The 3C91C/3C92C consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4 lead hermetically sealed metal can. Applications

CNY18V

Abstract: CNY18IV CNY18 CNY18III
Contextual Info: CNY18 Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for high reliability requirements. 96 12257

RFN20NS3S

Abstract: RFN20 RFN20N RFN-20 RFN20 DIODE RFN20NS3 RFN20-NS3S TO-263s
Contextual Info: RFN20NS3S Data Sheet Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zDimensions Unit : mm zLand Size Figure(Unit : mm) RFN20 NS3S zApplications General rectification 䐟㻌 zFeatures 1)Low switching loss 2)High current overload capacity

cny18

Abstract: Telefunken Phototransistor
Contextual Info: CNY18 TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically sealed 4 lead TO72 metal can package for high reliability requirements.

4n25 schematic

Abstract: 4N25 4N25 TEMIC 4N25 applications 4N26 4N25-28 4N27 IC 4N25 4n25 application Control 4N25
Contextual Info: TELEFUNKEN Semiconductors 4N25/ 4N26/ 4N27/ 4N28 Optocoupler with Phototransistor Output Description The 4N25/ 26/ 27/ 28 consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages.

4N27

Abstract: 4N25 4N26 4N28 4N25 applications
Contextual Info: 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline package.

Contextual Info: Data Sheet Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zDimensions Unit : mm zLand Size Figure(Unit : mm) RFN20 NS3S zApplications General rectification 䐟㻌 zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure

3C91C

Abstract: 3C91C telefunken 3C92C 3c91
Contextual Info: 3C91C/ 3C92C Optocoupler with Phototransistor Output Description The 3C91C/ 3C92C consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead hermetically sealed metal can. Applications Galvanically separated circuits for general purposes

RFN20

Abstract: RFN20 DIODE rfn20n d0835
Contextual Info: Data Sheet Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zDimensions Unit : mm zLand Size Figure(Unit : mm) RFN20 NS3S zApplications General rectification 䐟㻌 zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure

6392

Abstract: TEM00
Contextual Info: Version 0.90 29.04.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED BRAGG REFLECTOR LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL PRELIMINARY SPECIFICATION DBR Laser EYP-DBR-1080-00080-2000-SOT02-0000 General Product Information

diode laser bragg

Abstract: GaAs diode nm TEM00
Contextual Info: Version 0.90 29.04.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED BRAGG REFLECTOR LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL PRELIMINARY SPECIFICATION DBR Laser EYP-DBR-1080-00080-2000-TOC03-0000 General Product Information

diode 1079

Abstract: medical application of laser semiconductor laser 1064 nm laser diode
Contextual Info: Version 0.90 08.04.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-1064-08000-4020-CMT04-0000 General Product Information Product Application

diode 47-16

Abstract: T1929N T380N T869N diode 4.7-16 M6-C
Contextual Info: M6C - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D

laser diode lifetime

Abstract: diode laser bragg TEM00 Thermistor 200 dbr laser
Contextual Info: Version 0.90 29.04.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED BRAGG REFLECTOR LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION BAL DFB/DBR Laser EYP-DBR-1080-00020-2000-BFY02-0000 General Product Information

TCST2000

Abstract: TCST-2000 TCST1000 Telefunken Phototransistor
Contextual Info: TCST1000/TCST2000 TELEFUNKEN Semiconductors Optoelectronic Interrupter with Aperture Description The TCST1000/TCST2000 consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages. The elements are mounted on one leadframe in coplanar

Contextual Info: AON6758 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Integrated Schottky Diode (SRFET) • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant

4N25GV

Abstract: 4N25V 4N35V 4N35GV
Contextual Info: 4N25V G / 4N35V(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The 4N25V(G)/ 4N35V(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline

4N25

Abstract: 4N26 4N27 4N28 4N25-28
Contextual Info: 4N25/ 4N26/ 4N27/ 4N28 Optocoupler with Phototransistor Output Description The 4N25/ 26/ 27/ 28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a

4n25 vishay

Contextual Info: 4N25/ 4N26/ 4N27/ 4N28 Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline package. The elements are mounted on one leadframe using