DIODE 10A 600V Search Results

c_00572

Contextual Info: 1 2 TO-220 D2PAK 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 1 2 APT10SC60K APT10SC60SA 600V 10A 600V 10A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

Contextual Info: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0101 Rev.1.01 Nov 01, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

Contextual Info: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0102 Rev.1.02 Nov 21, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

10SC6

Contextual Info: 2 3 2 2 3 3 1 1 4 1 4 4 Anti-Parallel Parallel APT2X10SC60J APT2X11SC60J 27 2 T- SO APT2X11SC60J APT2X10SC60J 600V 600V 10A 10A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier

S10VT60

Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VT60 Case : 2F: SVT Case Unit : mm 600V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

Contextual Info: APT10DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 10A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery

UD1006

Abstract: TO-220F JEDEC UD1006FR 318 MARKING
Contextual Info: UD1006FR Ordering number : ENA1745 SANYO Semiconductors DATA SHEET UD1006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • VRRM=600V. trr=60ns typ (IF=0.5A, IR=1A). • • VF=1.3V max (IF=10A). Halogen free compliance Specifications

UD1006

Abstract: UD1006FR-H A1745
Contextual Info: UD1006FR Ordering number : ENA1745A SANYO Semiconductors DATA SHEET UD1006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • VRRM=600V trr=60ns typ (IF=0.5A, IR=1A) • • VF=1.3V max (IF=10A) Halogen free compliance Specifications

A1402

Abstract: diode 10a 600v S10VTA60
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VTA60 CaseCase : 2F: SVTA Unit : mm 600V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ● Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

Contextual Info: UD1006FR Ordering number : ENA1745A SANYO Semiconductors DATA SHEET UD1006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • VRRM=600V trr=60ns typ (IF=0.5A, IR=1A) • • VF=1.3V max (IF=10A) Halogen free compliance Specifications

10A400V

Abstract: ESAD39 ESAD39C ESAD39D ESAD39N SC-65 600V-10A
Contextual Info: ESAD39 C,N,D (10A) (400V to 600V / 10A) Outline drawings, mm FAST RECOVERY DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC EIAJ Super high speed switching

diode 10a 400v

Abstract: FAST RECOVERY DIODE 10A 400V esad39
Contextual Info: ESAD39 C,N,D (10A) (400V to 600V / 10A) Outline drawings, mm FAST RECOVERY DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC EIAJ Super high speed switching

Contextual Info: APT10SCE170B 1700V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package

Contextual Info: APT10SCE120B 1200V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package

Contextual Info: APT10SCE120B 1200V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package

APT10SCD120B

Contextual Info: APT10SCD120B 1200V 10A Zero Recovery Silicon Carbide Schottky Diode TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package

10JL2CZ47A

Contextual Info: 10JL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 10A

10JL2CZ47

Contextual Info: 10JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 10A

Contextual Info: n - n x V'CX-Y- Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS SF10L60U 600V 10A • trr2 5 n s • 7 ,llÆ - ,lb K m m •SRSÎÜ RATINGS Absolute Maximum Ratings a i 5 E-fSymbol Conditions a Item Storage Temperature Operating Junction Temperature

RJQ6008

Contextual Info: Preliminary Datasheet RJQ6008DPM 600V - 10A - IGBT and Diode High Speed Power Switching R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package