DIODE 10A 800V Search Results

YG225D8

Abstract: power Diode 800V 10A DIODE 10a 800v
Contextual Info: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2

WF-260

Contextual Info: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0

DIODE 10a 800v

Abstract: YG225D8 power Diode 800V 10A YG225C8 YG225N8 N8 Diode
Contextual Info: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0

Contextual Info: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0

S10VT80

Abstract: high Forward Voltage Diode
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VT80 Case : 2F: SVT Case Unit : mm 800V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

DIODE 10a 800v

Abstract: S10VTA80
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VTA80 CaseCase : 2F: SVTA Unit : mm 800V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ● Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

Contextual Info: APT10SCD120BCT 1200V 10A Zero Recovery Silicon Carbide Schottky Diode BCT T O PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times (trr) • Higher Reliability Systems

Contextual Info: APT10SCD120B 1200V, 10A Zero Recovery and Ultra Low Leakage SiC Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems

Contextual Info: APT10SCE170B 1700V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package

Contextual Info: Bulletin I2166 rev. B 09/05 SAFEIR Series 8EWS.SPbF SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Lead-Free "PbF" suffix IFSM = 200A < 1V @ 10A VRRM = 800V, 1200V Description/ Features The 8EWS.SPbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with

8EWS12S

Abstract: AN-994 8ews08spbf
Contextual Info: Bulletin I2166 rev. B 09/05 SAFEIR Series 8EWS.SPbF SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Lead-Free "PbF" suffix IFSM = 200A < 1V @ 10A VRRM = 800V, 1200V Description/ Features The 8EWS.SPbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with

A three-phase diode bridge rectifier datasheet

Abstract: 8EWS12S AN-994 8ews08spbf SINGLE-PHASE SILICON BRIDGE RECTIFIER 8A
Contextual Info: Bulletin I2166 rev. B 09/05 SAFEIR Series 8EWS.SPbF SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Lead-Free "PbF" suffix IFSM = 200A < 1V @ 10A VRRM = 800V, 1200V Description/ Features The 8EWS.SPbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with

Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA IXFA IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS = 800V = 10A Ω ≤ 1.1Ω

Contextual Info: 3 Phase Bridge Diode Diode Module O U T L IN E D IM E N S IO N S S10VTD/S10VTAD 800V 10A U n it • m m i&fiUAiOo <*[& *>]- Kîîëfdlmaxx*1.6 ?+o f S10VTA type has solid w ire lead terminals. ( l l MAXX fJl,6) • RATING S A b so lu te Maximum R a tin g s

10ETS

Abstract: 10ETS08 10ETS12 10ETS16
Contextual Info: Bulletin I2120 rev. A 07/97 SAFEIR Series 10ETS. INPUT RECTIFIER DIODE VF < 1.1V @ 10A Description/Features IFSM = 200A The 10ETS. rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation

10ETS

Abstract: 10ETS08 10ETS12 10ETS16
Contextual Info: Bulletin I2120 rev. A 07/97 SAFEIR Series 10ETS. INPUT RECTIFIER DIODE VF < 1.1V @ 10A Description/Features IFSM = 200A The 10ETS. rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation

Contextual Info: SCS210KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible

I2102

Abstract: smd code diode 20a 20ETS 20ETS08S 20ETS12S 20ETS16S AN-994 SMD-220 SMD Marking Code Nt
Contextual Info: Bulletin I2102 rev.B 07/97 SAFEIR Series 20ETS.S INPUT RECTIFIER DIODE VF Description/Features < 1V @ 10A IFSM = 300A The 20ETS.S rectifier SAFE IR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation

Contextual Info: SCS210KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible

g10 smd transistor

Abstract: SMD marking DK ON smd MARKING dk S 1854 smd diode marking code ax 8150 marking g10 smd code diode 20a SMD MARKING CODE 39 20ETS08S
Contextual Info: 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used

I2102

Abstract: 20ETS 20ETS08 20ETS12 20ETS16 SMD-220
Contextual Info: Previous Datasheet Index Next Data Sheet Bulletin I2102 20ETS. SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS. rectifier series has been optimized for very low forward voltage drop, with moderate

25ETS08S

Abstract: 25ETS12S SMD-220 00 Marking
Contextual Info: Bulletin I2158 05/00 SAFEIR Series 25ETS.S INPUT RECTIFIER DIODE Description/Features VF < 1V @ 10A IFSM = 300A VRRM 800 - 1200V The 25ETS. rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation

SCS210K

Abstract: SCS210KG
Contextual Info: SCS210KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) (3) Inner circuit Features 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible

smd diode 708

Abstract: 322 smd code g10 smd transistor smd code diode 20a 20ETS 20ETS08S 20ETS12S 20ETS16S AN-994 SMD-220
Contextual Info: Previous Datasheet Index Next Data Sheet 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate