DIODE 1123 Search Results

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

BZW14

Abstract: diode 1123
Contextual Info: 5bE D m TllDöSb [1040035 m PHILIPS INTERNATIONAL • PHIN BZW14 5bE Bi wmm N T-d- zi M W TRANSIENT SUPPRESSOR DIODE A double-diffused silicon glass passivated diode in a hermetically sealed axial-leaded glass envelope intended fo r transient suppression in telephony equipment.

CH521G4-30GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH521G4-30GP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.2 Ampere FEATURE * Extremely small surface mounting type. FBPD-1123 * Io=200mA guaranteed despite size FBPD-1123 CONSTRUCTION * Silicon epitaxial planar

Contextual Info: tSENSITRON 440CMQ030 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1123, REV. - PLASTIC POWER SCHOTTKY RECTIFIER 30 V, 440 A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • •

PRM4

Contextual Info: tSENSITRON 440CMQ030 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1123, REV. - PLASTIC POWER SCHOTTKY RECTIFIER 30 V, 440 A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • •

Contextual Info: SKS 1410N B6U 950 V16 Characteristics Symbol Conditions min. typ. max. Unit 1410 A 1208 1812 A 1123 2247 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Diode Three-phase uncontrolled

Contextual Info: Key Parameters VRRM = 3800 IFAVM = 790 IFSM = 7.6 VF0 = 1.01 rF = 0.72 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 07D3806 Doc. No. 5SYA 1123 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

Contextual Info: 13 Neptune Ave. Brooklyn NY 11235 Tel. 718 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN# 15-002 NOTIFICATION DATE: January 8, 2014 MODEL(S) AFFECTED: ROS-3214-119+ EXTENT OF CHANGE: Replacement of supplied Varactor Diode based on discontinuation of supply with alternate, qualified Varactor.

Contextual Info: 13 Neptune Ave. Brooklyn NY 11235 Tel. 718 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN#15-027 NOTIFICATION DATE: May 13, 2015 MODEL(S) AFFECTED: JTOS-1300+ EXTENT OF CHANGE: 1. Replacement of supplied transistor and varactor diode based on discontinuation of supply with alternate,

Contextual Info: 13 Neptune Ave. Brooklyn NY 11235 Tel. 718 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN# 15-026 NOTIFICATION DATE: May 13, 2015 MODEL(S) AFFECTED: ROS-480+ EXTENT OF CHANGE: 1. Replacement of supplied transistor and varactor diode based on discontinuation of supply with alternate,

Contextual Info: 13 Neptune Ave. Brooklyn NY 11235 Tel. 718 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN# 15-008 NOTIFICATION DATE: March 3, 2015 MODEL(S) AFFECTED: ROS-3250-519+ ZX95-3250+ EXTENT OF CHANGE: 1. Replacement of supplied transistor and varactor diode based on discontinuation of supply with alternate,

Contextual Info: 13 Neptune Ave. Brooklyn NY 11235 Tel. 718 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN#15-037 NOTIFICATION DATE: June 12, 2015 MODEL(S) AFFECTED: ROS-3800+ & ZX95-3800-S+ EXTENT OF CHANGE: 1. Replacement of supplied transistor and varactor diode based on discontinuation of supply with alternate,

tyco igbt

Abstract: V23990-P488-A tyco igbt 1200V V23990-P480-A NTC Thermistor 100 KOhm
Contextual Info: V23990-P488-A flow PIM 1, 1200V trench version 0303 Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode Dauergrenzstrom

zener 14v diode

Abstract: diode to220 1.4V zener diode
Contextual Info: High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use

irs26072

Abstract: IRS26072DSPBF pwm 555 timer mosfet driver DC motor speed control using 555 timer and mosfet 555 timer IC pin details micro RBS D2 13001 3 phase inverter circuit AN1123
Contextual Info: Data Sheet No. PD 97408B May 30, 2011 IRS26072DSPbF HIGH AND LOW SIDE DRIVER Product Summary Features • • • • • • • • • • • • • Floating channel designed for bootstrap operation Integrated bootstrap diode suitable for Complimentary

T1059N

Abstract: T1589N T2159N T308N T458N T709N
Contextual Info: W3C - Schaltung Anschlußspannung ~ ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D Thyristor

6 pin Optocoupler

Abstract: KD2300
Contextual Info: LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6 PIN OPTOCOUPLER PS2653 PS2654L2 FEATURES DESCRIPTION_ • PS2653 and PS2654 are optically coupled isolators contain­ ing a GaAs light emitting diode and an NPN silicon Darlingtonconnected phototransistor in a plastic DIP Dual In-Line

T1059N

Abstract: T1589N T2159N T308N T458N T709N
Contextual Info: W1C - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V ~ Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D Thyristor T

d 1667

Abstract: T1059N T1589N T2159N T308N T458N T709N T2159
Contextual Info: W3C - Schaltung Anschlußspannung ~ ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D Thyristor

T1059N

Abstract: T1589N T2159N T308N T458N T709N 16-04 thyristor
Contextual Info: W1C - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V ~ Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D Thyristor T

irs26072

Abstract: PWM USING IC 555 TIMER dc motor control pwm 555 timer mosfet driver DC motor speed control using 555 timer and mosfet AN-1123 AN-978 JESD22-A114 JESD78 555 timer igbt driver DT04-4
Contextual Info: Data Sheet No. PD 97408A August 18, 2009 IRS26072DSPbF HIGH AND LOW SIDE DRIVER Product Summary Features • • • • • • • • • • • • • Floating channel designed for bootstrap operation Integrated bootstrap diode suitable for Complimentary

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

st 9348

Abstract: TR182
Contextual Info: Ordering number:EN4656 FP105 N o.4656 T R : P N P E p ita x ia l P la n a r S ilicon T ra n s is to r SBD : S c h o ttk y B a r r ie r Diode S A iY O DC/DC Converter Applications F e a tu r e s • C om posite type w ith a P N P tr a n s is to r a n d a S ch o ttk y b a r r ie r diode c o n ta in e d in one pack g e,

Contextual Info: Coaxial Switch ZMSW-1111 50W SPST Pin Diode Reflective Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Features • wideband, 10 to 2500 MHz • good isolation, 35 dB typ. +20 dBm Control Current Applications