skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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skiip 613 gb
Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Text: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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Untitled
Abstract: No abstract text available
Text: iC-WJ, iC-WJZ LASER DIODE DRIVER Rev B2, Page 1/12 FEATURES APPLICATIONS ♦ Laser diode driver for continuous and pulsed operation CW to 300 kHz up to 250 mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor
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1n6963
Abstract: 1N6979 1N6970 1N6950 1N6956 1N6986 1N6972 1N6978 1N6966 1N6953
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 March 2004. INCH-POUND MIL-PRF-19500/718 12 December 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT
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MIL-PRF-19500/718
1N6950
1N6986,
MIL-PRF-19500.
1n6963
1N6979
1N6970
1N6956
1N6986
1N6972
1N6978
1N6966
1N6953
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Abstract: No abstract text available
Text: SKCD 61 C 170 I HDSEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions +, #453 6 #48, Values Units &- / 0 12 #+ / 3 & / 12 &- 7 / 0 12 &- / 0 12 0
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Abstract: No abstract text available
Text: SKCD 47 C 170 ISEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions +, "4536 "49, Values Units %- / 0 12 "+ / 3 % / 12 %- 7 / 0 12 %- / 0 12 8
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Abstract: No abstract text available
Text: DSEP12-12B HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12B Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips
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DSEP12-12B
O-220
60747and
20131029c
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DSEP15
Abstract: No abstract text available
Text: DSEP12-12B HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12B Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips
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DSEP12-12B
O-220
60747and
20131029c
DSEP15
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Untitled
Abstract: No abstract text available
Text: DSEP12-12A HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips
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DSEP12-12A
O-220
60747and
20131029b
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mil-prf-19500/MIL-PRF-19500/478
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 December 1999. INCH-POUND MIL-PRF-19500/507C 12 September 1999 SUPERSEDING MIL-S-19500/507B 9 December 1992 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT
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MIL-PRF-19500/507C
MIL-S-19500/507B
1N6036A
1N6072A
mil-prf-19500/MIL-PRF-19500/478
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1N4960 JANTX
Abstract: 1N6637 JANTX 1N4954 1N4954US 1N4996 1N4996US 1N5968 1N5968US 1N5969 1N6632
Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 November 2008. MIL-PRF-19500/356K 12 August 2008 SUPERSEDING MIL-PRF-19500/356J 1 February 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR,
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MIL-PRF-19500/356K
MIL-PRF-19500/356J
1N4954
1N4996,
1N5968,
1N5969,
1N6632
1N6637,
1N4954US
1N4996US,
1N4960 JANTX
1N6637 JANTX
1N4996
1N4996US
1N5968
1N5968US
1N5969
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Abstract: No abstract text available
Text: DSEP12-12AZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12AZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips
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DSEP12-12AZ
O-263
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Untitled
Abstract: No abstract text available
Text: DSEP12-12AZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12AZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips
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DSEP12-12AZ
O-263
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20131029a
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ZENER DIODE 1233
Abstract: zener diode 3.0 b2 ZENER DIODE E1 MARK N3 zener diode B2 PWSF0002ZA-A
Text: RKZ6.8TKJ Silicon Planar Zener Diode for Bidirectional Surge Absorption REJ03G1300-0200 Rev.2.00 May 12, 2006 Features • This product is for a two-way zener diode so its possible to use for bidirectional surge absorption. • Surge absorption for electronic devices such as LED-equipped devices.
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REJ03G1300-0200
PWSF0002ZA-A
ZENER DIODE 1233
zener diode 3.0 b2
ZENER DIODE E1
MARK N3
zener diode B2
PWSF0002ZA-A
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Abstract: No abstract text available
Text: DSEP12-12BZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12BZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips
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O-263
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Abstract: No abstract text available
Text: DSEP12-12BZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12BZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips
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DSEP12-12BZ
O-263
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MADL-011023-14150T
Abstract: No abstract text available
Text: MADP-011029-14150T High Power PIN Diode 50 MHz - 12 GHz Rev. V2 Features • • • • • • • • Functional Schematic 3 Terminal LPF Broadband Shunt Structure 50 MHz - 12 GHz Broadband Frequency >100 W Peak Power Handling < 0.1 dB Shunt Insertion Loss
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MADP-011029-14150T
260oC
MADP-011029
0E-14
0E-10
MADL-011023-14150T
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Abstract: No abstract text available
Text: MADP-011029-14150T High Power PIN Diode 50 MHz - 12 GHz Rev. V1 Features • • • • • • • • Functional Schematic 3 Terminal LPF Broadband Shunt Structure 50 MHz - 12 GHz Broadband Frequency >100 W Peak Power Handling < 0.1 dB Shunt Insertion Loss
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MADP-011029-14150T
260oC
MADP-011029
MADP-011027-14150T
0E-14
0E-10
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Untitled
Abstract: No abstract text available
Text: SKCD 61 C 170 I HD Absolute Maximum Ratings Symbol Conditions +, #453 6 #48, Values Units & - / 0 12 # + / 3 & / 12 &- 7 / 0 12 & - / 0 12 0 )0 3 3 &- 7 / 0 12 3 9 0 12 &- 7 SEMICELL CAL-DIODE
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diode b27
Abstract: sknd 40
Text: VRSM IFRMS maximum value for continuous operation VRRM 120 A SEMIPACK 1 Fast Diode Modules IFAV (sin. 180; Tcase = 85 °C; 50 Hz) V 42 A 1000 SKKD 42 F 10 SKMD 42 F 10 – 1200 SKKD 42 F 12 SKMD 42 F 12 SKND 42 F 12 1400 SKKD 42 F 14 SKKD 42 F 14 SKND 42 F 14
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Abstract: No abstract text available
Text: SKCD 47 C 170 I Absolute Maximum Ratings Symbol Conditions +, "4536 "49, Values Units % - / 0 12 " + / 3 % / 12 %- 7 / 0 12 % - / 0 12 8 3 3 %- 7 / 0 12 00 3 : 0 12 %- 7 SEMICELL CAL-DIODE
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Abstract: No abstract text available
Text: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.
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HSB0104YP
REJ03G0597-0200
ADE-208-730A)
PTSP0004ZB-A
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Abstract: No abstract text available
Text: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.
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HSB0104YP
REJ03G0597-0200
ADE-208-730A)
HSB0104YP
PTSP0004ZB-A
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850 PIN Photodetector
Abstract: photodetector 850 nm NDL2104
Text: b2E D N E C • b42?SES DD37443 3=12 ■ N E C E PHOTO DIODE ELECTRONICS INC NDL2104 OPTICAL FIBER C O M M U N IC A T IO N S SILICON PIN PHOTO DIODE DESCRIPTION NDL2104, is an epitaxial PIN photodiode detectors w ith excellent quantum efficiency, switching speed, and spectral range.
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DD37443
NDL2104
NDL2104,
Vr-10V,
850nm
NDL2104b2E
bH27S2S
0G37H44
850 PIN Photodetector
photodetector 850 nm
NDL2104
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