DIODE 1200V 8A Search Results

Contextual Info: RURP8120 Semiconductor 8A, 1200V U ltrafast Diode April 1995 Package Features • U Itrafast with Soft Recovery. <100ns JEDEC TO-220AC • Operating Temperature. +175°C • Reverse

K8120P3

Abstract: FAIRCHILD to220ab package K8120P K-8120 Diode 1200V 8A
Contextual Info: ISL9K8120P3 8A, 1200V Stealth Dual Diode General Description Features The ISL9K8120P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

K8120P3

Abstract: AN-7528 K8120P ISL9K8120P3 780V TA49413
Contextual Info: ISL9K8120P3 8A, 1200V Stealth Dual Diode General Description Features The ISL9K8120P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

RURP8120

Contextual Info: RURP8120 Data Sheet January 2002 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

rurp8120

Contextual Info: RURP8120 Data Sheet January 2000 File Number 3661.3 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

tc 144 e

Abstract: RURP8120
Contextual Info: RURP8120 Data Sheet January 2000 File Number 3661.3 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RHR8120C

Abstract: RHRP8120CC TA49096
Contextual Info: RHRP8120CC Data Sheet January 2000 File Number 3966.2 8A, 1200V Hyperfast Dual Diode Features The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

RURP8120CC

Contextual Info: RURP8120CC Data Sheet January 2000 File Number 4792 8A, 1200V Ultrafast Dual Diode Features The RURP8120CC is an ultrafast dual diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.

RHR8120C

Abstract: RHRP8120CC TA49096
Contextual Info: RHRP8120CC Data Sheet January 2002 8A, 1200V Hyperfast Dual Diode Features The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RHR8120C

Abstract: RHRP8120CC TA49096
Contextual Info: RHRP8120CC Data Sheet January 2000 File Number 3966.2 8A, 1200V Hyperfast Dual Diode Features Title HRP 20C The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

RHR8120C

Abstract: RHRP8120CC TA49096 RHR8120
Contextual Info: RHRP8120CC interrii J a n u a ry . Data Sheet w in File Num ber 3966.2 8A, 1200V Hyperfast Dual Diode Features The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

Contextual Info: STTA812D/DI/G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 8A V rrm 1200V trr (typ) 50ns Vf 2.0V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

Hyperfast Diode 1200V

Abstract: RHRP8120 TA49096 rhrp8120 diode
Contextual Info: RHRP8120 S E M I C O N D U C T O R 8A, 1200V Hyperfast Diode April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <55ns JEDEC TO-220AC o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C ANODE

TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE

Abstract: STTA812D STTA812DI STTA812G STTA812G-TR DSA003605
Contextual Info: STTA812D/DI/G TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V K A A K K FEATURES AND BENEFITS • ■ ■ ■ ■ ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

IR E78996

Abstract: GB25RF120K
Contextual Info: Bulletin PD - 94552 rev.A 05/03 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

8EWF12S

Abstract: AN-994
Contextual Info: Bulletin I2203 03/05 QUIETIR Series 8EWF12S SURFACE MOUNTABLE FAST SOFT RECOVERY DIODE VF < 1.3V @ 8A Lead-Free "PbF" suffix trr = 80ns VRRM = 1200V Description/ Features The 8EWF12SPbF fast soft recovery QUIETIR rectifier series has been optimized for combined

Diode 1200V 8A

Abstract: ERW09-120
Contextual Info: ERW09-120 8A/1200V Fast Recovery Diode for IGBT Outline Drawings Equivalent circuit Units mm K A Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Repetitive Reverse Voltage Repetitive peak surge current Average rectiffied forward current

Contextual Info: Bulletin I2203 03/05 QUIETIR Series 8EWF12S SURFACE MOUNTABLE FAST SOFT RECOVERY DIODE VF < 1.3V @ 8A Lead-Free "PbF" suffix trr = 80ns VRRM = 1200V Description/ Features The 8EWF12SPbF fast soft recovery QUIETIR rectifier series has been optimized for combined

8EWF12S

Abstract: AN-994 8EWF12SPBF
Contextual Info: Bulletin I2203 03/05 QUIETIR Series 8EWF12S SURFACE MOUNTABLE FAST SOFT RECOVERY DIODE VF < 1.3V @ 8A Lead-Free "PbF" suffix trr = 80ns VRRM = 1200V Description/ Features The 8EWF12SPbF fast soft recovery QUIETIR rectifier series has been optimized for combined

Contextual Info: ULTRAFAST RECOVERY POWER RECTIFIER DIODE SML1200HIC-FB • 1200V, 8A Full Bridge Rectifier Configuration • Fast Reverse Recovery trr = 40ns • High Speed Low Loss Switching • Hermetic TO258D Isolated Package with Ceramic Seals • Switch Mode Power Supply applications

DIODE RECTIFIER BRIDGE SINGLE 1200v

Abstract: schottky diode 1200v Carbide Schottky Diode SCHOTTKY DIODE BRIDGE SML10SC12CIC-FB Diode 1200V 8A
Contextual Info: SILICON CARBIDE SCHOTTKY DIODE BRIDGE SML10SC12CIC-FB • VRRM = 1200V • IF AVG = 8A • • • • • • Full Bridge Rectifier Configuration Hermetic T258D Package with Ceramic Seals Zero Reverse Recovery Current Zero Reverse Recovery Voltage High Speed Switching

"Power rectifier Diode"

Contextual Info: ULTRAFAST RECOVERY POWER RECTIFIER DIODE SML1200HIC-FB • 1200V, 8A Full Bridge Rectifier Configuration • Fast Reverse Recovery trr = 40ns • High Speed Low Loss Switching • Hermetic TO258D Isolated Package with Ceramic Seals • Switch Mode Power Supply applications

TA49096

Abstract: RHRP8120
Contextual Info: RHRP8120 Data Sheet January 2000 File Number 3660.2 8A, 1200V Hyperfast Diode Features The RHRP8120 is a hyperfast diodes with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

RHRPB120

Abstract: ba 10 g 8a IPV2
Contextual Info: RHRP8120 ¡2 HARRIS S E M I C O N D U C T O R 8A, 1200V Hyperfast Diode April 1995 Package Features • Hyperfast with Soft Recovery. <55ns JE D EC TO -220A C • Operating Temperature. +175°C