DIODE 1314 Search Results

Contextual Info: DS1109SG DS1109SG Rectifier Diode Replaces January 2000 version, DS4169-3.0 DS4169-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 5000V ■ High Surge Capability IF AV 910A IFSM APPLICATIONS 11500A ■ Rectification ■ Freewheel Diode

Contextual Info: DS1109SG DS1109SG Rectifier Diode Replaces January 2000 version, DS4169-3.0 DS4169-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 5000V ■ High Surge Capability IF AV 910A IFSM APPLICATIONS 11500A ■ Rectification ■ Freewheel Diode

DS1109SG49

Abstract: DS1109SG50 DS1109SG DS1109SG45 DS1109SG46 DS1109SG47 DS1109SG48
Contextual Info: DS1109SG DS1109SG Rectifier Diode Replaces January 2000 version, DS4169-3.0 DS4169-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 5000V ■ High Surge Capability IF AV 910A IFSM APPLICATIONS 11500A ■ Rectification ■ Freewheel Diode

DS1109SG

Abstract: DS1109SG45 DS1109SG46 DS1109SG47 DS1109SG48 DS1109SG49 DS1109SG50
Contextual Info: DS1109SG DS1109SG Rectifier Diode Replaces January 2000 version, DS4169-3.0 DS4169-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 5000V ■ High Surge Capability IF AV 910A IFSM APPLICATIONS 11500A ■ Rectification ■ Freewheel Diode

AN4839

Abstract: DS1109SG DS1109SG45 DS1109SG46 DS1109SG47 DS1109SG48 DS1109SG49 DS1109SG50
Contextual Info: DS1109SG DS1109SG Rectifier Diode Replaces January 2000 version, DS4169-3.0 DS4169-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 5000V ■ High Surge Capability IF AV 910A IFSM APPLICATIONS 11500A ■ Rectification ■ Freewheel Diode

A641LE

Abstract: A641/6RT51 A641 A641L A641LA A641LB A641LC A641LD A641LM A641PN
Contextual Info: A641 40mm RECTIFIER DIODE 2600V / 1500A The A641 rectifier diode features a nominal 40mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

Contextual Info: CHE1270-QAG RoHS COMPLIANT 5-44GHz Detector GaAs Monolithic Microwave IC in SMD leadless package Description The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications

MO-220

Abstract: AN0017 CHE1270 CHE1270-QAG esd protection smd
Contextual Info: CHE1270-QAG RoHS COMPLIANT 5-44GHz Detector GaAs Monolithic Microwave IC in SMD leadless package Description The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications

BUP60

Contextual Info: SIEMENS BUP603D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 603D ^CE 600V h 42A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code

kp50a

Abstract: kp20a ZP200A KP300A KP200A ZP300A kp5a ZP20A zp5a KP100a
Contextual Info: Ü t t S M M W M I# Stud Version Semiconductor STANDARD RECOVERY DIODE Stud Version FAST RECOVERY DIODE (Stud Version) M ' °r & É (« IÊ 3 £ ) PHASE CONTROL THYRISTOR (Stud Version) TRIAC THYRISTOR (Stud Version) t i& R T & ä H K K A ) FAST THYRISTOR (Stud Version)

BC237

Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

3 tfk 206

Abstract: SHINDENGEN DIODE
Contextual Info: ÿ i ' t - K ï v - i -;u 3 Pha>e Bridge Diode Diode Module mmtt'ikm S15VT o u t l i n e d im e n s io n s S15VTA 800V 15A •S Q IP A '^ -y •  ÎH Œ - B l FSM •y'jy V T A iM : ? ffl i t •I73> im-<yn—? •fa , RATINGS Absolute Maximum Ratings

Contextual Info: Doc No. TT4-EA-13147 Revision. 2 Product Standards Zener Diode DE37120D0L DE37120D0L Silicon epitaxial planar type Unit: mm 1.2 For ESD protection 0.3 0.13 3 • Features 0.8 1.2  Excellent rising characteristics of zener current Iz  Low zener operating resistance Rz

1310nm DFB BH LASER

Abstract: InGaAsP lens TO STM-16 LD SOURCE Aspheric Lens to56 ball Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
Contextual Info: 1310nm InGaAsP strained MQW for FP-LD Ø1.5mm ball lens TO CAN KLT-131451S Rev. 006 Description KLT-131451x is long wavelength Fabry-Perot LD source in TO-56 package with ball lens cap. KLT-131451x consists of an InGaAsP strained multi-quantum well MQW laser diode(LD) and an InGaAs

tyco igbt

Abstract: tyco P484 tyco igbt P484 V23990-P484-A Tyco flow pim
Contextual Info: V23990-P484-A flow PIM 1, 600V version 0303 Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode Dauergrenzstrom

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

DBD10

Abstract: DBD10C DBD10G
Contextual Info: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm

DBD10G

Abstract: bridge RECTIFIER GI DBD10 DBD10C
Contextual Info: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm

Contextual Info: MBRB3030CTL SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: Features: http://onsemi.com • Dual Diode Construction – • • •

Contextual Info: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm

tyco igbt

Abstract: V23990-P487-A tyco P487 igbt tyco tyco igbt 1200V V23990P487A th2070
Contextual Info: V23990-P487-A flow PIM 1, 1200V trench version 0303 Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode Dauergrenzstrom

onsemi 035 1314

Abstract: uis test MBR3035CT MBRB3030CTL SMD310
Contextual Info: MBRB3030CTL SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: Features: http://onsemi.com • Dual Diode Construction — • • •

DBD10

Abstract: DBD10C DBD10G
Contextual Info: Ordering number : ENN7030 DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm

dbd10g

Contextual Info: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm