DIODE 1A 1000V Search Results

diode case R-1

Abstract: 02 diode R-1 02 diode case R-1 DO-41-MINI
Contextual Info: ZOWIE Low VF Rectifier Diode G110DL THRU G110ML Low VF Rectifier Diode 200V~1000V / 1.0A VF < 0.90V @IF = 1A FEATURES IFSM = 30Amp * * * * * Lead free product, compliance to RoHS GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction

2510W

Abstract: RS1M diode
Contextual Info: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10

Contextual Info: ZOWIE Low VF Rectifier Diode G110DL THRU G110ML Low VF Rectifier Diode 200V~1000V / 1.0A VF < 0.90V @IF = 1A FEATURES IFSM = 30Amp * * * * * Compliance to RoHS product GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction Low forward voltage drop

diode 1000V 10a

Abstract: 02 diode case R-1 diode case R-1 200V-1000V
Contextual Info: ZOWIE Low VF Rectifier Diode G110DLH THRU G110MLH Low VF Rectifier Diode 200V~1000V / 1.0A VF < 0.90V @IF = 1A FEATURES IFSM = 30Amp * * * * * * Halogen-free type Lead free product, compliance to RoHS GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction

Contextual Info: ZOWIE Low VF Rectifier Diode GP10DLH THRU GP10MLH Low VF Rectifier Diode VF < 0.90V @IF = 1A FEATURES IFSM = 50Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop

GP10DL

Abstract: DO-204AL
Contextual Info: ZOWIE Low VF Rectifier Diode GP10DL THRU GP10ML Low VF Rectifier Diode VF < 0.90V @IF = 1A FEATURES IFSM = 50Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop

DO-204AL

Abstract: diode 10dl
Contextual Info: ZOWIE Low VF Rectifier Diode GP10DLH THRU GP10MLH Low VF Rectifier Diode VF < 0.90V @IF = 1A FEATURES IFSM = 50Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop

DSA10

Abstract: DSA10G DSA10J DSA10L DIODE 1.0A 1000V
Contextual Info: Ordering number:EN711D DSA10 Diffused Junction Type Silicon Diode 1.0A Power Rectifier Features Package Dimensions • Plastic molded type. · Peak Reverse Voltage : VRM=600 to 1000V · Average Rectified Current : IO=1A. unit:mm 1005 [DSA10] C:Cathode A:Anode

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 1.0A GF10DLH THRU GF10MLH VF < 0.91V @IF = 1A FEATURES Halogen-free type Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction High surge current capability

24 DO-214AC

Abstract: MARKING code 14 DO-214AC gf10ml
Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 1.0A GF10DLH THRU GF10MLH VF < 0.91V @IF = 1A FEATURES Halogen-free type Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction High surge current capability

GF10DL

Abstract: GF10GL GF10JL GF10KL GF10ML
Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 1.0A GF10DL THRU GF10ML VF < 0.91V @IF = 1A FEATURES Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction High surge current capability Ideal for surface mount automotive applications

GP10DL

Abstract: GP10GL GP10JL GP10KL GP10ML
Contextual Info: ZOWIE Low VF Rectifier Diode GP10DL THRU GP10ML Low VF Rectifier Diode VF < 0.90V @IF = 1A FEATURES IFSM = 50Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop o 1.0 Ampere operation at TA=75 C with no thermal runaway

gf10ml

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 1.0A GF10DL THRU GF10ML VF < 0.91V @IF = 1A FEATURES Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction High surge current capability Ideal for surface mount automotive applications

A14A

Abstract: A14F
Contextual Info: A14A, A14C, A14E A14F, A14P 1A, 50V - 1000V Diodes Decem ber 1993 Features Package • High-Temperature M etallurglcally Bonded, No Com­ pression Contacts as Found In Diode-Constructed Rectifiers JEDEC STYLE 0 0 -2 0 4 TOP VIEW • Glass-Passivated Junction

IXYS IXBOD

Abstract: lt 747 bod ixys
Contextual Info: D IX Y S Breakover Diodes Applications • Transient voltage protection • High-voltage switches • Crowbar • Lasers • Pulse generators o- 1998 IXYS All rights reserved H -1 mmm IXBOD 1 -06.10 1A. X U Single Breakover Diode =600 - 1000V ^AVM ”

DSA10

Abstract: DSA10G DSA10J DSA10L
Contextual Info: Ordering number :EN711D N 0 .7 I ID DSA10 / Diffused Junction Type Silicon Diode 1.0A Power Rectifier F e a tu re s • P lastic molded type •P eak reverse voltage V r m —“ 600 to —1000V • Average rectified cu rren t Iq = 1A A b so lu te M ax im u m R a tin g s

IC 7805

Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
Contextual Info: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)

QM50HY-2H

Abstract: transistor VCE 1000V E80276
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50HY-2H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75

10205 transistor

Abstract: all transistor E80276 QM50TB-2H
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75

QM50DY-2H

Abstract: E80276
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75

E80276

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50E2Y/E3Y-2H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50HY-2H Ic Collector current. 50A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized

QM50TB-2HB

Abstract: E80276 all transistor
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2HB • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750

QM50DY-2HB

Abstract: TRANSISTOR TC 100 E80276 transistor VCE 1000V
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50DY-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2HB • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750