DIODE 1N3595 Search Results

1N3595

Abstract: diode 1N3595
Contextual Info: 1N3595 SILICON LOW LEAKAGE DIODE JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications. Higher breakdown voltage devices are available on special order. MAXIMUM RATINGS: TA=25°C

Contextual Info: 1N3595 High Conductance Low Leakage Diode. Working Inverse Voltage 125 V. 2.53 D. Page 1 of 1 Enter Your Part # Home Part Number: 1N3595 Online Store 1N3595 Diodes High Conductance Low Leakage Diode. Working Inverse Transistors Voltage 125 V. Integrated Circuits

Germanium diode

Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes

1N3595

Abstract: AM-08
Contextual Info: L ALLEGRO M ICROSYSTEM S INC □S0433Ö 0 GD 3 7 Û Ô 3 • ALGR T-91-Û1 PROCESS TRR Process TRR Medium-Speed Switching Diode Process TRR is a non-gold-doped silicon epitaxial diode designed to 1N3595 specifications and used in medium-speed switching applications.

Sprague 1N3600

Abstract: diode R 360 BL diode a13 TND907 diode arrays tnd903 A1090 sprague TND 16-pin a plastic package
Contextual Info: ÛS13ÛS0 SPRAGUE/SEM ICOND GROUP 8 5 1 4 0 1 9 S P RA GU E. S E M I C O N D S / ICS 0003Ö05 □ SERIES TND DIODE ARRAYS SERIES TND DIODE ARRAYS rT ,he TND series consists o f diode arrays packaged •*- in 14-pin and 16-pin dual in-line plastic pack­ ages for easy automatic insertion and better printed

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

1N3595

Abstract: CMPD3003 CPD64
Contextual Info: PROCESS Central CPD64 Low Leakage Diode TM Semiconductor Corp. Low Leakage Diode Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE DIE THICKNESS 17.5 x 17.5 MILS ANODE BONDING PAD AREA TOP SIDE METALIZATION 8.0 MILS DIAMETER BACK SIDE METALIZATION Au - 6,000Å

1N3595

Abstract: CMPD3003 CPD64
Contextual Info: PROCESS CPD64 Low Leakage Diode Low Leakage Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 6,000Å

1N3595

Abstract: CMPD3003 CPD64
Contextual Info: PROCESS CPD64 Low Leakage Diode Low Leakage Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 6,000Å

d918

Abstract: D938 TND903 TND907
Contextual Info: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy automatic insertion and better printed circuit board density. In addition to the diode characteristics for standard products

1N3595

Abstract: CMPD3003 CPD64
Contextual Info: PROCESS CPD64 Low Leakage Diode Low Leakage Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 15,000Å Back Side Metalization Au-As - 13,000Å

1N3595

Abstract: CMPD3003 CPD64
Contextual Info: PROCESS CPD64 Central Low Leakage Diode TM Semiconductor Corp. Low Leakage Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization

ND921

Abstract: br 903
Contextual Info: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy autom atic insertion and better printed circuit board density. In addition to the diode characteristics for standard products

FSA2501P

Abstract: FSA2501M FSA2500M FSA1410M MONOLITHIC DIODE ARRAYS FSA2501 MONOLITHIC DIODE ARRAYS fairchild 1n4307 1N3070 JANTX 1N4307 FA3310
Contextual Info: FAIRCHILD DIODES DIODES MATCHED DIODE ASSEMBLIES PLASTIC AND GLASS PACKAGES Number of Diodes Package Item VF Matching -55° C to +100° C Basic Diode ip Range AVp Specification mA mV 2 Moulded Pair (308) 2 Discrete Pair DO-7 or DO-35 4 Moulded Quad (310)

Contextual Info: Low Leakage Diode Applications 1N3595 DO-35 Glass Package Used in instrumentation applications, where low leakage and high voltage isolation are important. Features DO-35 Glass Package nominal dimensions Six sigma quality Metallurgically bonded glass 0.020"

DO-35 PACKAGE

Abstract: Fairchild 1N3595 1n6099
Contextual Info: 1N3595/6099 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. High Conductance

LL3595

Abstract: 1N3595-1 1N3595UR-1 DO-213AA 117W3 PIV125 BKC Semiconductors
Contextual Info: MINI-MELF-SMD Applications LL359S or 1N3595UR-1 Low Leakage Diode 1N3595UR-1 / LL3595 Used in instrumentation applications, where space, low;leakage and high ' voltage isolation are important LL-34/35 MINI-MELF SMD Package DO-213AA (nominal dimensions) #

1N3595-1

Abstract: 1N3595-1 JANTX
Contextual Info: FEATURES 1N3595-1 • 1N3595-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/241 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:

TND903

Abstract: TND907 TND908 1N4447 1N3070 1N3595 1N3800 1N4153 TND918 TND921
Contextual Info: I n te r n a tio n a l TND903 thru TND942 S e m ic o n d u c to r , I n c . DIODE ARRAYS — II 6\ - - The TND series of diode arrays are packaged in 14 and 16 pin d u al-in-line p la s tic packages fo r easy autom atic insertion and better

a33 smd diode

Abstract: smd diode a33 BKC Semiconductors smd a33 BKC diode do35 DSAIH0002559 LL3595 Bkc SMD
Contextual Info: Low Leakage Diode 1N3595 Applications I DO-35 Glass Package Used in instrumentation applications, where low leakage and high voltage isolation are important. DO-35 Glass Package Features • • • • • • nominal dimensions Six sigma quality Metallurgical^ bonded

LL3595

Abstract: MIL-PRF-19500/241 1N3595UR-1 DO-213AA
Contextual Info: FEATURES 1N3595UR-1 • 1N3595UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/241 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3595, & MLL3595 MAXIMUM RATINGS AT 25 °C

IN3595

Abstract: 1N3595
Contextual Info: COMPUTER DIODE 1N3595=JAN- J A N T X & jantxv 1N3595 150 mA, S w itch in g ABSO LUTE MAXIMUM RATINGS, AT 25“C FEATURES Peak Reverse V o lta g e .125V Reverse Breakdown V o lt a g e .150V

TND908

Abstract: tnd903
Contextual Info: DIODE ARRAYS T h e T N D se rie s c o n sists of diode arrays pa cka ge d in 14-pin and 16-pin dual in-line plastic p a ck a g e s for e a s y autom atic insertion and better printed circuit board density. In addition to the diod e c h aracteristics for standard products

Contextual Info: 1N3595 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current