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    DIODE 1N5402 DC Search Results

    DIODE 1N5402 DC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1N5402 DC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5400 diode cross reference

    Abstract: diode 1N5408 specifications 1n5408
    Text: Formosa MS Silicon Rectifier 1N5400 THRU 1N5408 List List. 1 Package outline. 2 Features. 2


    Original     		PDF 1N5400 1N5408 1000hrs. MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1N5400 diode cross reference diode 1N5408 specifications 1n5408

    DO-201AD

    Abstract: 1N5408
    Text: Formosa MS Axial Leaded General Purpose Rectifiers 1N5400 THRU 1N5408 List List. 1 Package outline. 2


    Original     		PDF 1N5400 1N5408 MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs. DO-201AD 1N5408

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Axial Leaded General Purpose Rectifiers 1N5400 THRU 1N5408 List List. 1 Package outline. 2


    Original     		PDF 1N5400 1N5408 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs.

    1N5408 Diode 1N5408

    Abstract: diode 1n5408 temperature rating diode 1N5408 diode cross reference 1N5404
    Text: Formosa MS Silicon Rectifier 1N5400 THRU 1N5408 List List. 1 Package outline. 2 Features. 2


    Original     		PDF 1N5400 1N5408 125oC MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1N5408 Diode 1N5408 diode 1n5408 temperature rating diode 1N5408 diode cross reference 1N5404

    Untitled

    Abstract: No abstract text available
    Text: Silicon Rectifier Formosa MS 1N5400 THRU 1N5408 List List. 1 Package outline. 2 Features. 2


    Original     		PDF 1N5400 1N5408 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs.

    1N5408

    Abstract: 1N5408 Diode 1N5408 1N5400 DIODE 1N5402 dc DIODE 1N5402 3a diode 1n5408 diode 1n5401 1n5407
    Text: 1N5400~1N5408 3.0A Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Plastic material – UL recognition flammability classification 94V – 0 Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions


    Original     		PDF 1N5400 1N5408 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1-Jan-2006 1N5408 Diode 1N5408 DIODE 1N5402 dc DIODE 1N5402 3a diode 1n5408 diode 1n5401

    Untitled

    Abstract: No abstract text available
    Text: 1N5400~1N5408 3.0A Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Plastic material – UL recognition flammability classification 94V – 0 Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions


    Original     		PDF 1N5400 1N5408 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1-Jun-2004

    1n5408

    Abstract: DIODE 1N5402 dc 1N5408 Diode 1N5408 DIODE 1N5400 1n5408 diode diode 1n5401 1N5407 1n5400 diode 1N5400 diode 1n5402
    Text: 1N5400~1N5408 3.0A Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Plastic material – UL recognition flammability classification 94V – 0 Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions


    Original     		PDF 1N5400 1N5408 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1-Jan-2006 DIODE 1N5402 dc 1N5408 Diode 1N5408 DIODE 1N5400 1n5408 diode diode 1n5401 1n5400 diode diode 1n5402

    diode IN 5402 3A

    Abstract: Diode IN 5404 DIODE 3A 1000V 1n5406 diode DIODE 3A 600V APPLICATION DIODE 1N5406 diode in 5401 DIODE 1N5402 3a Diode 1N5404 DIODE 1N5402 dc
    Text: General Purpose Rectifiers Features: • • • 3.0 ampere operation at TA = 75°C with no thermal runaway. High current capability. Low leakage. DO-201AD Colour Band Denotes Cathode Dimensions : Millimetres Inches Absolute Maximum Ratings* TA = 25°C unless otherwise noted


    Original     		PDF DO-201AD diode IN 5402 3A Diode IN 5404 DIODE 3A 1000V 1n5406 diode DIODE 3A 600V APPLICATION DIODE 1N5406 diode in 5401 DIODE 1N5402 3a Diode 1N5404 DIODE 1N5402 dc

    DIODE 1N4001

    Abstract: DIODE 1N4002 DIODE 1N5402 dc Diode 1N4001 50V 1.0A DO-41 Rectifier Diode free download diode 1n4001 data sheet CHARACTERISTICS DIODE 1N4002 1n4001 diode CHARACTERISTICS DIODE 1N4006 IN 4001 data sheet DIODE 1n4005
    Text: General Purpose Rectifiers Features: • • Low forward voltage drop. High current capability. DO-41 Colour Band Denotes Cathode Dimensions : Millimetres Inches Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol Value Units Average Rectified Current 0.375 Inches Lead Length at TA = 75°C


    Original     		PDF DO-41 DIODE 1N4001 DIODE 1N4002 DIODE 1N5402 dc Diode 1N4001 50V 1.0A DO-41 Rectifier Diode free download diode 1n4001 data sheet CHARACTERISTICS DIODE 1N4002 1n4001 diode CHARACTERISTICS DIODE 1N4006 IN 4001 data sheet DIODE 1n4005

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


    Original     		PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180

    1N5400-1N5408

    Abstract: APPLICATION DIODE 1N5406 LITEON 1N5406 1n5406 liteon 1N54001 diode 1n5406 1n5408 BL 1n54001n5408 1N5401 Vishay DIODE 1N5402 3a
    Text: 1N5400–1N5408 Vishay Lite–On Power Semiconductor 3.0A Rectifier Features D Diffused junction D High current capability and low forward voltage drop D Surge overload rating to 200A peak D Low reverse leakage current D Plastic material – UL Recognition


    Original     		PDF 1N5400 1N5408 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 D-74025 1N5400-1N5408 APPLICATION DIODE 1N5406 LITEON 1N5406 1n5406 liteon 1N54001 diode 1n5406 1n5408 BL 1n54001n5408 1N5401 Vishay DIODE 1N5402 3a

    in5408 diode

    Abstract: IN5408 diode IN5408 diode 1N5408 specifications diode IN 5402 3A IN5408 diode data sheet Diode IN 5404 DIODE 1N5402 3a Power diode SPECIFICATIONs DIODE 1N5400
    Text: 1N5400 - IN5408 Power Diode 1A to 3A, Standard Axial Rectifiers Features: • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capability. • Low leakage. Ampere General Purpose Rectifiers Absolute Maximum Ratings* Symbol IO TA = 25°C unless otherwise noted


    Original     		PDF 1N5400 IN5408 in5408 diode IN5408 diode IN5408 diode 1N5408 specifications diode IN 5402 3A IN5408 diode data sheet Diode IN 5404 DIODE 1N5402 3a Power diode SPECIFICATIONs DIODE 1N5400

    1N5408 Diode 1N5408

    Abstract: diode 1N5408 specifications DIODE 1N5402 dc 1N540x Diode 1n5400 diode 1N540x diode 1n5408 diode 1n5401 1n5408 wte diode 1n5402
    Text: 1N5400 – 1N5408 WTE POWER SEMICONDUCTORS Pb 3.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-201AD, Molded Plastic


    Original     		PDF 1N5400 1N5408 DO-201AD, MIL-STD-202, DO-201AD 1N5408 Diode 1N5408 diode 1N5408 specifications DIODE 1N5402 dc 1N540x Diode 1n5400 diode 1N540x diode 1n5408 diode 1n5401 1n5408 wte diode 1n5402

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    1N4007 ZENER DIODE

    Abstract: diode A14A diode st4 diac diode a15a zener db3 zener diode 1n4744 diode zener 1n4002 zener diode 5A zener 400v
    Text: GENERAL PRODUCTS PART No. DEVICE TYPE PACKAGE DESCRIPTION ASY TRIGGER T098 VS1 - 14/18 VOLTS, VS2 - 7/9 VOLTS, SWITCHING CURRENT 80 mA. DIAC DIAC DIAC DIAC DIAC DIAC DIAC D035 D035 D035 D 035 D 035 D035 D035 32 40 34 32 35 40 60 DIODE DIODE DIODE DIODE DIODE


    OCR Scan     		PDF 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N5400 1N5401 1N5402 1N4007 ZENER DIODE diode A14A diode st4 diac diode a15a zener db3 zener diode 1n4744 diode zener 1n4002 zener diode 5A zener 400v

    diode IN4000

    Abstract: in4000 1n4000 DIODE P600 diode diode P600A 1N4004 or 1N5404 diode P600M DC 1NS400 p600m DIODE IN4000 diode
    Text: 5SE » GOLDENTECH DISCRETE MOEbSTfi OOGOOGfl C3 I N - GOIDEHTECH DIKRETC JEmiCOnPUCTOR 1.0 3.0 6.0 AMPERES DIODE RECTIFIER 0041/D027/P600 IN4000 IN5400 s P600 E R I IN4000/IN5400/P600 E MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS fitting* at 2S*C ambient temperature unless otheiwtsa specified;


    OCR Scan     		PDF IN4000/IN5400/ 0041/D027/P600 IN4000 IN5400 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 diode IN4000 1n4000 DIODE P600 diode diode P600A 1N4004 or 1N5404 diode P600M DC 1NS400 p600m DIODE IN4000 diode

    Untitled

    Abstract: No abstract text available
    Text: SILICON RECTIFIERS m -— f e f l i P L A S T IC M A T E R IA L U S E D C A R R IE S U L 9 4 V -0 O P E R A T IN G A N D S T O R A G E T E M P E R A T U R E -6 5 ‘ C to + 1 7 5 °C fi&iifo-stm_ Maximum Peak Reverse Voltage TYPE Maximum Average Rectified Current


    OCR Scan     		PDF AMPERES/DO-15 RL201 RL202 RL203 RL204 RL205 RL206 RL207 DO-201 DO-41

    IN5822 diode

    Abstract: diode IN5822 6A60 diode 6A100 diode IN5822 IN5820 Zener 6A10 DIODE ct 58340 diode ct 2A05 diode zener fr303
    Text: R F ELECTRONICS INC tè i 7 4 ^ 3 1 ^ DDOGODa Ö EME D T -//- o f P Ö ^ e M H IG H V O LTA G IS ZEPJE& _' V-• . , '•i'x'-'-'. á?^ityatf-».'> a !>i‘~ .^ V ¿V ,~-“ r¿ l*»irif»ii<-'i«t-‘ - SILICON RECTIFIERS Fof Glass Passivated add " G ” to Part No.


    OCR Scan     		PDF 1N4001/G 1N4002/G 1N4003/G 1N4004/G 1N4005/G 1N4006/G 1N4007/G DO-41 1N5391/G 1N5392/G IN5822 diode diode IN5822 6A60 diode 6A100 diode IN5822 IN5820 Zener 6A10 DIODE ct 58340 diode ct 2A05 diode zener fr303