DIODE 1N6263 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode 1N6263W SCHOTTKY DIODE SOD-123 Features 1.05 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance

1N6263W

Abstract: A2 SOD-123
Contextual Info: SOD-123 Plastic-Encapsulate Diode 1N6263W SCHOTTKY DIODE SOD-123 Features 1.05 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion

1N6263

Abstract: UHF DO-35
Contextual Info: 1N6263 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. DO-35

1N6263

Contextual Info: 1N6263 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. DO-35

Germanium diode

Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes

CPD92

Abstract: Schottky Diode 1N6263 CMDD6263 CMKD6263 CMOD6263 CMPD6263 CMSD6263
Contextual Info: PROCESS CPD92 Central Schottky Diode TM Semiconductor Corp. High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.9 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å

"Schottky Diode"

Abstract: 1N6263 Schottky diode Die Schottky diode wafer CMOD6263 CMPD6263 CMSD6263 CPD92V CMDD6263 CMKD6263
Contextual Info: PROCESS CPD92V Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

"Schottky Diode"

Abstract: 1N6263 CMDD6263 CMKD6263 CMLD6263 CMOD6263 CMPD6263 CMSD6263 CMUD6263E
Contextual Info: PROCESS CPD102X Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

schottky diode high voltage

Abstract: diode schottky 29 1N6263 diode 29 CMDD6263 CMKD6263 CMLD6263 CMOD6263 CMPD6263 CMSD6263
Contextual Info: PROCESS CPD92V Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

1N4007 diode SOD 80

Abstract: 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006
Contextual Info: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 BAS28 CLL914 CMPD 914 CMPD2836 CMPD2838 CMPD7000 SOT-143 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 Dual, Isolated Leadless Switching Diode Single Switching Diode Dual, Common Anode Dual, Common Cathode

1N4937 SMD

Abstract: diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23
Contextual Info: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 CMPD 914 CLL914 CMPD28:i6 CMPD28IÌ8 CMPD7000 BAS28 SOT-23 SOD-80 SOT-23 SOT-23 SOT-23 SOT-143 Single Switching Diode Leadless Switching Diode Dual, Common Anode Dual, Common Cathode Dual, In Series

marking SB

Contextual Info: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123 ' Mechanical Data_

1N6263

Contextual Info: visHAY 1N6263 SCHOTTKY BARRIER SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance I Mechanical Data_ •

DS1101

Abstract: 1N6263W 1N6263W-7-F
Contextual Info: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion

1N6263W

Contextual Info: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE POWER SEMICONDUCTOR Features • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion

marking sb diode

Abstract: 1N6263W 1N6263W-7 J-STD-020A
Contextual Info: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123

Contextual Info: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123

Contextual Info: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123

Contextual Info: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion He h SOD-123 □ • •

Contextual Info: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123

Contextual Info: SPICE MODEL: 1N6263W 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for

SB SOD123

Contextual Info: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123

Contextual Info: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE SPICE MODEL: 1N6263W Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion

Contextual Info: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion · · ·