zener diode 1NU 9F
Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:
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BCE0001A
BCE0001B
zener diode 1NU 9F
diode 1NU
DLA DIODE TOSHIBA
diode 1NU 7.1
NH5 Diode
Schottky diode TO220 15A 1000V
diode 1NU 5.1
diode 1NU 6F
10lc48
GU 1R5
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HA17805P
Abstract: hitachi j100 HA17812P J5001 TLG223 r346 rectifier ha17805 nihon cement sg 403 varistor transistor c373
Text: HA16141/42, HA16341/42 PFC and PWM Controller, Redundant Secondary Switching Power Supply Controller Application Note ADE-504-005 Z Rev.0 Apr. 2002 Hitachi Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
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HA16141/42,
HA16341/42
ADE-504-005
HA17812P
IC307
HA17431UA
HA16341NT
HA16341/42
HA17805P
hitachi j100
J5001
TLG223
r346 rectifier
ha17805
nihon cement
sg 403 varistor
transistor c373
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Untitled
Abstract: No abstract text available
Text: LOW LOSS DIODE SPECIFICATION 1 . Absolute Maximum Ratings Iten Storage temperature Operating junction temperature Peak reverse voltage Average rectified forward current Peak surge forward current Dielectric Strength Mounting Torqe T c = 2 5*C Symbol T .ti
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D0050b5
SF20LC30
00050b?
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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sony cxd 1125
Abstract: No abstract text available
Text: SONY ICX057AL 1/4-inch CCD Image Sensor for CCIR Black-and-white Video Cameras Description The ICX057AL is an interline CCD solid-state image sensor suitable for CCIR black-and-white video cameras. High sensitivity is achieved through the adoption of HAD Hole-Accumulation Diode sensors.
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ICX057AL
ICX057AL
14-pin
1/50s
1/10000s
sony cxd 1125
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INI615
Abstract: 1Nu5 1N1614 Diodes IC 4011 4011 IC 1N4A NASA Group MC 4011 B 1N1614 1N1614R
Text: MIL SPECS I C | 0 D D G 1 E S D0011S1 T | 7^0/-¡7 NOTICE OF VALIDATION INCH-POUND MIL-S-19500/162B NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, 1N4459R
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MIL-S-19500/162B
1N1614,
1N1615,
1N1616,
1N4458,
1N4459,
1N1614R,
1N1615R,
1N1616R,
1N4458R,
INI615
1Nu5
1N1614 Diodes
IC 4011
4011 IC
1N4A
NASA Group
MC 4011 B
1N1614
1N1614R
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1N1149
Abstract: AS4A 1N1147
Text: MIL SPECS I OODDiaS 7 | INCH-POUND NOTICE OF VALIDATION MIL-S-19500/254A ER NOTICE 1 29 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N1147 AND 1N1149 Military specification MIL-S-19500/254A(EL), dated 6 February 1968 has been reviewed and determined to be valid for use in
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00D0ias
MIL-S-19500/254A
1N1147
1N1149
MIL-5-19500/254A
MIL-S-19500/254
1NU49
961-A
1N1149
AS4A
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Untitled
Abstract: No abstract text available
Text: SONY ICX062AL 2/3-inch CCD Image Sensor for EIA B/W Video Camera Description The ICX062AL is an interline CCD solid-state image sensor suitable for EIA black-and-white video cameras with a 2/3-inch optical system. High sensitivity is achieved by adopting HAD HoleAccumulation Diode sensors. The chip features a
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ICX062AL
ICX062AL
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Untitled
Abstract: No abstract text available
Text: TENTATIVE DATA I2BK6,26BK6 6BK6 TUNG'SOL DOUBLE-DIODE TRIODE MINIATURE TYPE î - 4 - MAX COATED ^=5 UNIPOTENTIAL CATHODE HEATER 6 .3 T-5i o VO LTS 3 0 0 MA. AC OR DC 5‘ 2 T ANY MOUNTING P O S I T I O N BOTTOM VIEW GLASS BULB THE 6BK6 M INIATURE BUTTON 7 PIN
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26BK6
26BK6"
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1N135
Abstract: diode 1n295 1n69 1N541 1N295 1N128 1N69A 1N69A diode diode 1N69a 1N295 diode
Text: CRIMSON S E M I CONDU CT OR INC dF | SSlIOÌt 0D003S0 7 2514096 C R IMSON S E M I C O N D U C T O R INC 99D 00350 D T'Ot'Ol GERMANIUM DIODE TYPE PEAK RE VE R SE V O LT A G E AVERAGE FO RW AR D CURRENT V O LTS mA M INIMUM FO RW AR D CURRENT A T 1 V O LT M A X IM U M
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0D003S0
1N66A
1N67A
-100V
1N68A
1N69A
1N70A
at-10V
1N81A
1N135
diode 1n295
1n69
1N541
1N295
1N128
1N69A diode
diode 1N69a
1N295 diode
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SDF9130
Abstract: No abstract text available
Text: PRODUCT Æ iitxan C Â T Â l ' DEVICES.INC. P-CHANNEL ENHANCEMENT MOS FET -100V.-12A. 0.3Q SD F 9 1 3 0 SD F 9 1 3 0 JAA JAB FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS
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-100Y
SDF9130
MIL-S-19500
300hS,
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1D11A
Abstract: SDF11N100
Text: PRODUCT Æ iitron CÂTÂIO ' N-CHANNEL ENHANCEMENT MOS FET 1000V, 11A , 1.15 n SDF11N100 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
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SDF11N100
MIL-S-19500
IF-11A
1D11A
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je5740
Abstract: MJES740 Ferroxcube core MR826 diode JE5741 MJE5742* equivalent JE57
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE5740 M JE5741* M JE 5742* NPN Silicon Power Darlington Transistors ‘Motorola Pr#f*rr#d Dovte* The MJE5740, 41, 42 Darlington transistors are designed for high-voltage power switching in inductive circuits. They are particularly suited for operation in applications
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MJE5740,
JE5740
JE5741*
fUE574
1-----UE574
MJES740
Ferroxcube core
MR826 diode
JE5741
MJE5742* equivalent
JE57
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diode 1NU
Abstract: 2SK1115 diode 1NU 0 b
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- 7r-MOSm 2SK1115 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS DC-DC CONVERTER,RELAY DRIVE AND HOTOR DRIVE APPLICATIONS. Unit in mm 3.6±0.2 10.3MAX. 3L1 FEATURES: • 4-Volt Gate Drive
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2SK1115
diode 1NU
2SK1115
diode 1NU 0 b
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Untitled
Abstract: No abstract text available
Text: FEA TU R ES • 256 x 1 photosite array ■ ■ ■ ■ ■ ■ ■ 13pm * 17pm photosiles on 13pm pitch Dynam ic range typical: 7000:1 O n-chip video and com pensation amplifiers Low pow er requirements All operating voltages 15V and under Low noise equivalent exposure
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CCD111
256-element
CCD110F.
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2SJ312
Abstract: No abstract text available
Text: T O S H IB A 2SJ312 2SJ312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-^-MOSlV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in m m TO-220FL 10.3MAX.
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2SJ312
O-22QFL
2SJ312
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TTC 103 thermistor
Abstract: XTR100AP XTR100 XTR100AM RTD signal conditioning theory Cold Junction Compensation Temecula I09fi 400X1
Text: X T R 100 BU RR-BRO W N n n Precision, Low Drift 4mA to 20mA TWO-WIRE TRANSM ITTER FEA T U R ES A P P L IC A T IO N S • INSTRUMENTATION AMPLIFIER INPUT Low OffMt Voltage. 25m V mix Low Voltigi Drift 0.5m V/°C mix Low Nonllnsirlty, 0.01% mix • INDUSTRIAL PROCESS CONTROL
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XTR100
14-PIN
XTR100
TTC 103 thermistor
XTR100AP
XTR100AM
RTD signal conditioning theory
Cold Junction Compensation
Temecula
I09fi
400X1
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TTC 103 thermistor
Abstract: XTR100AP thermistor ttc 103 XTR100 zero elevation sand zero suppression level 467C zero elevation and zero suppression SL010
Text: XTR100 BU RR-BRO W N n n Precision, Low Drift 4mA to 20mA TWO-WIRE TRANSMITTER FEATURES A P P L IC A T IO N S • INSTRUMENTATION AMPLIFIER INPUT Low OffMt Voltage. 25m V mix Low Voltigi Drift 0.5m V/°C mix Low Nonllnsirlty, 0.01% mix • INDUSTRIAL PROCESS CONTROL
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XTR100
14-PIN
XTR100
TTC 103 thermistor
XTR100AP
thermistor ttc 103
zero elevation sand zero suppression level
467C
zero elevation and zero suppression
SL010
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MIP0224SY
Abstract: 2SK1937 t201 transformer M51995AFP mip0224 ZUP-200 Nemic-Lambda CN d1fl20u 0134G ZUP20
Text: ZUP-200 SERIES RELIABILITY DATA DWG: 1A548-79-01 QA APPD APPD CHK DWG ç> ^ ^ A WR/llMAQciifltfi,Do^ovv PeUl c.y. ’hi/ ji j ci ‘I &3. S/ ÜOV-l-Lô<i fjn/~ &NEMIC-LAMBDA LTD. INDEX 1.MTBF; Calculated Value of MTBF R-1 2.Component Derating R-2-12 3.Main Components Temperature Rise
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ZUP-200
1A548-79-01
R-2-12
R-13-14
R-15-16
R-17-30
ZUP-200
RCR-9102)
MIL-HDBK-217F.
GENRAD-2503.
MIP0224SY
2SK1937
t201 transformer
M51995AFP
mip0224
Nemic-Lambda CN
d1fl20u
0134G
ZUP20
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IN3492
Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90
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3E120
450E120R
450F05
450F05R
450F10
450F10R
450F20
450F20R
450F30
450F30R
IN3492
sg 4001 diode
1NA4
md914
35C10
1N20b
1n67a
0a202 diode
iN3495
1469r
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Untitled
Abstract: No abstract text available
Text: 10A LDO 3-Pin Adjustable Linear Regulator Description The CS5210-1 linear regulator pro vides 10A at adjustable voltages from 1.25V to 4.5V. This adjustable device requires two external resis tors to set the output voltage and provide the minimum load current
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CS5210-1
CS5210-1
CS5210-1GT3
T0-220
O-220
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74LS259N
Abstract: No abstract text available
Text: TO SH IB A TC74HC259AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC259AP, TC74HC259AF, TC74HC259AFN 8 -BIT Note The JED EC SOP (FN) is not available in Japan. ADDRESSABLE LATCH The TC74HC259A is a high speed CMOS ADDRESSABLE LATCH fabricated with silicon gate C2MOS technology.
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TC74HC259AP/AF/AFN
TC74HC259AP,
TC74HC259AF,
TC74HC259AFN
TC74HC259A
16PIN
DIP16-P-300-2
16PIN
200mil
74LS259N
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16-Bit LED Driver with Shift Register and Latch
Abstract: M66310FP M66310P
Text: M ITSUBISHI <DIGITAL ASSP> M66310P/FP 16-B IT LED DRIVER W ITH S H IF T REG ISTER AND LATCH DESCRIPTION M 6 6 3 1 0 P /F P is a LE D array driver having a 16bit serial- PIN CONFIGURATION TOP VIEW input and p a ra llel output shiftregister function with direct
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M66310P/FP
16-BIT
M66310P/FP
16bit
16bits
16-Bit LED Driver with Shift Register and Latch
M66310FP
M66310P
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S202TA1
Abstract: AC200V LR63705 triac varistor S4.3 ir led
Text: PREPARED BY: DATE: V APPROVED BY: & , 9<m£AUL !ìù i ED-94045D SHARP 9^ DATE: ELECTRONIC COMPONENTS. GROUP SHARP CORPORATIONX\ &&. ±7. ECTRONIC ;S DIV. SPECIFICATION DEVICE SPECIFICATION FOR SOLID STATE RELAY MODEL No. S202TA1 1. These specification sh eets include the contents under the copyright of Sharp Corporation ("Sharp" .
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ED-94045D
S202TA1
AC200V
LR63705
triac varistor
S4.3 ir led
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