DIODE 1SS Search Results

free IR circuit diagram

Abstract: diode marking DEC forward reverse diagram 1SS356 DIODE MARKING 1M 1SS356 MARKING band switching diode 1ss356 equivalent
Contextual Info: 1SS356 Surface Mount Band Switching Diode Band Switching Diode P b Lead Pb -Free 100m AMPERES 35 VOLTS Features: * Low Diode Capacitance : 1.2pF(Max.) * Low Diode Forward Resistance : 0.9Ω(Max.) * Low Reverse Current : IR = 10nA(Max.) * Small outline Surface mount SOD-323 Package

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

DIODE 1SS133

Abstract: 1SS133
Contextual Info: 1SS133 SMALL SIGNAL DIODE VOLTAGE: 90V CURRENT: 130mA FEATURE DO-34 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-34 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.12g Dimensions in inches and millimeters

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1SS400 Preliminary DIODE SWITCHING DIODE  DESCRIPTION The UTC 1SS400 is a switching diode, it uses UTC’s advanced technology to provide customers with high speed switching and low reverse leakage, etc.  1 2 FEATURES SOD-523

1SS145

Abstract: 1ss144 1SS141 1SS146 1SS147
Contextual Info: BL GALAXY ELECTRICAL 1SS141 - 1SS147 SMALL SIGNAL SWITCHING DIODE DO - 35 GLASS FEATURES Silicon epitaxial planar diode High speed switching diode These diodes are also available in glass case DO-34 MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode

100MHZ

Contextual Info: 1SS277WT BAND-SWITCHING DIODE Features • Small plastic SMD package • Continuous reverse voltage: max. 35V • continuous forward current:max.100mA • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω. Applications • Low loss band switching in VHF television tuners.

100MHZ

Contextual Info: 1SS277WT BAND-SWITCHING DIODE Features • Small plastic SMD package • Continuous reverse voltage: max. 35V • continuous forward current:max.100mA • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω. Applications • Low loss band switching in VHF television tuners.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1SS355 DIODE SWITCHING DIODE DESCRIPTION  The UTC 1SS355 is a switching diode, it uses UTC’s advanced technology to provide the customers with high reliability and ultra small mold type, etc. The UTC 1SS355 is suitable for high speed switching applications,

UTC 225

Abstract: 1SS355G-CB2-R 1SS355
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1SS355 Preliminary DIODE SWITCHING DIODE DESCRIPTION „ The UTC 1SS355 is a switching diode, it uses UTC’s advanced technology to provide the customers with high reliability and ultra small mold type, etc. The UTC 1SS355 is suitable for high speed switching applications,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1SS355 DIODE SWITCHING DIODE DESCRIPTION  The UTC 1SS355 is a switching diode, it uses UTC’s advanced technology to provide the customers with high reliability and ultra small mold type, etc. The UTC 1SS355 is suitable for high speed switching applications,

1SS98

Abstract: NEC DO-35
Contextual Info: NEC MIXER DIODE •KTHON DEVICE 1SS98 UHF DETECTOR, MIXER SILICON EPITAXIAL SCHOTTKY BARRIER DIODE DESCRIPTION AND APPLICATIONS FEATURES The 1SS98 is silicon epitaxial schottky barrier diode, espe­ • Small size glass package. DO-35 TYPE cially designed for mixing, log or A-D converting, video de­

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS387 High Speed Switching Diode SOD-523 FEATURES Small package MARKING: G Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter Symbol Limit

triac tic 236

Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Contextual Info: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD

DIODE smd marking A4

Abstract: smd diode A4 smd transistor a4 A CLIPPER CIRCUIT APPLICATIONS 1SS303 marking a4 a4 marking A4 marking diode a4 smd transistor smd A4
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS303 Features Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.

Contextual Info: 1SS265 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions

1SS265

Contextual Info: 1SS265 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions

smd diode a6

Abstract: smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.

1SS265

Contextual Info: 1SS265 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions

1SS265

Abstract: 100MHZ
Contextual Info: 1SS265 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions

1SS399

Contextual Info: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance

SC61 equivalent

Abstract: TOSHIBA DIODE 1SS399 sc61 SC-61 EIAJ
Contextual Info: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5 s (typ.) Small total capacitance

s31 schottky diode

Abstract: 1SS357
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes FEATURES z z Small Package Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits

S4 DIODE schottky

Abstract: MARKING S4 diode schottky s4 schottky diode DIODE marking S4 sod marking code s4 diode sod-523 S4 1SS389 1ss389
Contextual Info: 1SS389 Schottky Barrier Diode SOD-523 Features — Low forward voltage. — Small package. Applications — Dimensions in inches and millimeters Schottky diode in surface mounted circuits. Ordering Information Type No. Marking 1SS389 S4 Package Code SOD-523

1SS397

Contextual Info: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance