DIODE 1SS133 Search Results

DIODE 1SS133

Abstract: 1SS133
Contextual Info: 1SS133 SMALL SIGNAL DIODE VOLTAGE: 90V CURRENT: 130mA FEATURE DO-34 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-34 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.12g Dimensions in inches and millimeters

1SS131

Abstract: 1S1555 1s1555 diode 1SS130 10 35 DIODE 1SS132 1SS134 1S1553 1SS133 1SS141
Contextual Info: BL GALAXY ELECTRICAL 1S-SERIES SMALL SIGNAL SWITCHING DIODE DO - 35 GLASS FEATURES Silicon epitaxial planar diode High speed switching diode These diodes are also available in glass case DO-34 MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

DIODE 1SS133

Abstract: 1SS133 1ss133 diode diode
Contextual Info: Diodes High–speed switching diode 1SS133 FApplications High speed switching FExternal dimensions Units: mm FFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3) High speed. (typical recovery time = 1.5ns) FConstruction Silicon epitaxial planar

Contextual Info: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol

1SS133

Contextual Info: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol

1SS133

Contextual Info: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol

1SS133 T77

Abstract: diode T-77 1SS133 1SS133 T-77 T-77 diode T77 t 77 do-34 rohm
Contextual Info: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction

1SS133

Contextual Info: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol

1SS133 T-77

Contextual Info: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction

1SS133

Abstract: do-34 rohm
Contextual Info: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction

1SS133

Abstract: 1ss133 diode
Contextual Info: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol

SEMTECH 1SS133

Abstract: 1SS133
Contextual Info: 1SS133 HIGH SPEED SWITCHING DIODE Features • Glass sealed envelope. MSD • High speed. (trr = 1.2ns Typ.) • High reliability. Construction • Silicon epitaxial planar. Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Limits Unit Peak Reverse Voltage

SEMTECH 1SS133

Abstract: 1SS133
Contextual Info: 1SS133 HIGH SPEED SWITCHING DIODE Features • Glass sealed envelope. MSD • High speed. (trr = 1.2ns Typ.) • High reliability. Construction • Silicon epitaxial planar. Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Limits Unit Peak Reverse Voltage

1SS133

Contextual Info: 1SS133 Diodes High-speed switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND !Features 1) Glass sealed envelope. (MSD) 2) High reliability. 3) High speed. (trr=1.2ns Typ.) φ0.4±0.1 22Min. φ1.8±0.2 22Min.

1SS133

Abstract: 29010
Contextual Info: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3

1SS133

Abstract: diode 1ss133
Contextual Info: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3

1SS133

Contextual Info: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3

1SS133

Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE 1SS133 REVERSE VOLTAGE : 90 V CURRENT: 0.2 A FEATURES DO - 34 GLASS Glass sealed envelope. (MSD) VRM=250V guaranteed High reliability MECHANICAL DATA Case: DO-34, glass case Polarity: Color band denotes cathode

1SS133

Abstract: DIODE 1SS133
Contextual Info: LESHAN RADIO COMPANY, LTD. Switching diode 1SS133 . 300mW DO-34 . Glass silicon switching diodes We declare that the material of product compliance with RoHS requirements. Product Characteristic Absolute Maximum Ratings Ta=25°C TYPE VRM(V) VR(V) IFM(mA)

1SS133

Abstract: 1ss133 diode DIODE 1SS133 ROHM 1SS133 diode switching do-34 rohm yellow band glass diode
Contextual Info: 1SS133 Diodes High-speed switching diode 1SS133 ! Applications External dim ensions Units : mm High speed switching ! Features 1) Glass sealed envelope. (MSD) 2) High reliability. 3) High speed. (trr=1,2ns Typ.) I Construction Silicon epitaxial planar ! Absolute maximum ratings (Ta=25°C)

1SS133

Abstract: v405
Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE 1SS133 REVERSE VOLTAGE : 35 V CURRENT: 110 mA FEATURES DO - 35 GLASS Glass sealed envelope. (MSD) High reliability MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode Weight: 0.005 ounces, 0.14 grams

1SS133

Contextual Info: 1SS133 HIGH SPEED SWITCHING DIODE DO - 34 Glass FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free 1.00 25.4 min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode

1ss133m

Abstract: do-204
Contextual Info: 1SS133M Pb 300mW Hermetically Sealed Glass Switching Diode RoHS COMPLIANCE DO-34 Features — — — — — — — — — Fast switching device TRR<4.0nS DO-34 package (JEDEC DO-204) Through-hole device type mounting Hermetically sealed glass Compression bonded construction