DIODE 1UW Search Results

75339P3

Contextual Info: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S HARRIS S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 MM Features • 70A, 55V • Ultra Low On-Resistance, ros ON = 2i2 • Diode Exhibits Both High Speed and Soft Recovery

LED 18000 mcd 3mm white

Abstract: LED 18000 mcd LED 5mm white 18000 MCD zener 431 CIE1931 Warm White LED
Contextual Info: Technical Data Sheet 5 mm Round Warm White LED T-13/4 334-15/X2C1-1UWB Features ․Popular T-13/4 colorless 5mm package. ․High luminous power. ․Typical chromaticity coordinates x=0.40, y=0.39 according to CIE1931. ․Bulk, available taped on reel. ․ESD-withstand voltage: up to 4KV

Contextual Info: LAMP 334-15/X1C2-1UWA Features •Popular T-1 3/4 round package •High luminous power •Typical chromaticity coordinates x=0.40, y=0.39 according to CIE1931 •Bulk, available taped on reel. •ESD-withstand voltage: up to 4KV •The product itself will remain within RoHS compliant version

CIE1931

Contextual Info: Technical Data Sheet 334-15/X1C2-1UWA Features ․Popular T-1 3/4 round package. ․High luminous power. ․Typical chromaticity coordinates x=0.40, y=0.39 according to CIE1931. ․Bulk, available taped on reel. ․ESD-withstand voltage: up to 4KV ․The product itself will remain within RoHS compliant version.

CIE1931

Contextual Info: Technical Data Sheet 334-15/X2C1-1UWB Features ․Popular T-1 3/4 round package. ․High luminous power. ˙Typical chromaticity coordinates x=0.40, y=0.39 according to CIE1931. ˙Bulk, available taped on reel. ˙ESD-withstand voltage: up to 4KV ․The product itself will remain within RoHS compliant version .

CIE1931

Contextual Info: Technical Data Sheet 334-15/T2C1-1UWA Features ․Popular T-1 3/4 round package ․High luminous power. ․Typical chromaticity coordinates x=0.29, y=0.28 according to CIE1931. ․Bulk, available taped on reel. ․ESD-withstand voltage: up to 4KV ․The product itself will remain within RoHS compliant version.

Contextual Info: Technical Data Sheet 334-15/T2C1-1UWB Features ․Popular T-1 3/4 round package ․High luminous power. ․Typical chromaticity coordinates x=0.29, y=0.28 according to CIE1931. ․Bulk, available taped on reel. ․ESD-withstand voltage: up to 4KV ․The product itself will remain within RoHS compliant version.

CIE1931

Contextual Info: Technical Data Sheet 334-15/T2C1-1UWB Features ․Popular T-1 3/4 round package ․High luminous power. ․Typical chromaticity coordinates x=0.29, y=0.28 according to CIE1931. ․Bulk, available taped on reel. ․ESD-withstand voltage: up to 4KV ․The product itself will remain within RoHS compliant version.

diode a32

Abstract: LED 18000 mcd white
Contextual Info: Technical Data Sheet 5 mm Round Warm White LED T-13/4 334-15/X2C1-1UWB Features ․Popular T-13/4 colorless 5mm package. ․High luminous power. ․Typical chromaticity coordinates x=0.40, y=0.39 according to CIE1931. ․Bulk, available taped on reel. ․Pb free .

A44 zener diode

Abstract: LED 18000 mcd CIE1931
Contextual Info: Technical Data Sheet 5 mm Round White LED T-13/4 334-15/T2C1-1UWA Features ․Popular T-13/4 colorless 5mm package. ․High luminous power. ․Typical chromaticity coordinates x=0.29, y=0.28 according to CIE1931. ․Bulk, available taped on reel. ․Pb free .

Diode Zener a15

Contextual Info: Technical Data Sheet 5 mm Round White LED T-13/4 334-15/W2C1-1UWB Features ․Popular T-13/4 colorless 5mm package. ․High luminous power. ․Typical chromaticity coordinates x=0.29, y=0.28 according to CIE1931. ․Bulk, available taped on reel. ․Pb free .

Contextual Info: PD-9.1100B International IO R Rectifier IRF7201 HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Voss = 30V ^D S on

MOSFET IRFZ44

Abstract: IRFZ44 mosfet switching circuit IRFZ44 IRFZ44 mosfet n channel a type irfz44 mosfet POWER MOSFET N-Channel 230V IRFz44 n-channel MOSFET
Contextual Info: IRFZ44 A dvanced Power MOSFET FEATURES B V DSS — 60 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 2 4 Q , 50 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

IRFZ44A

Abstract: POWER MOSFET N-Channel 230V 0-024Q
Contextual Info: IRFZ44A A dvanced Power MOSFET FEATURES B V DSS — 60 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 2 4 Q , 50 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

DIODE AA 119

Abstract: POWER MOSFET N-Channel 230V
Contextual Info: IRFW/IZ44A A dvanced Power MOSFET FEATURES B V DSS — 6 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 0 .0 2 4 Q . 50 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK

Contextual Info: LE AVAILAB DS1302 Trickle-Charge Timekeeping Chip PIN CONFIGURATIONS TOP VIEW VCC2 1 8 VCC1 X1 2 7 SCLK X2 3 6 I/O GND 4 5 CE DS1302 Real-Time Clock Counts Seconds, Minutes, Hours, Date of the Month, Month, Day of the Week, and Year with Leap-Year Compensation Valid Up to 2100

Contextual Info: LE AVAILAB DS1302 Trickle-Charge Timekeeping Chip FEATURES PIN CONFIGURATIONS VCC2 1 X1 2 X2 3 GND 4 DS1302 TOP VIEW 8 VCC1 7 SCLK 6 I/O 5 CE DIP 300 mils VCC2 1 X1 2 X2 3 GND 4 DS1302 Real-Time Clock Counts Seconds, Minutes, Hours, Date of the Month, Month, Day of the

ds1302 circuit

Abstract: DS1202 DS1302 DS1302N DS1302S DS1302SN DS1302Z DS1302ZN *1302ZN ds1302 circuit real time clock Register definition
Contextual Info: DS1302 Trickle-Charge Timekeeping Chip www.maxim-ic.com FEATURES PIN CONFIGURATIONS Real-Time Clock Counts Seconds, Minutes, Hours, Date of the Month, Month, Day of the Week, and Year with Leap-Year Compensation Valid Up to 2100 31 x 8 Battery-Backed General-Purpose RAM

Contextual Info: LE AVAILAB DS1302 Trickle-Charge Timekeeping Chip ORDERING INFORMATION PART DS1302+ DS1302N+ DS1302S+ DS1302SN+ DS1302Z+ DS1302ZN+ TEMP RANGE 0°C to +70°C Functional Diagrams -40°C to +85°C 0°C to +70°C -40°C to +85°C 0°C to +70°C -40°C to +85°C

CD4052BM

Contextual Info: MILITARY DATA SHEET Original Creation Date: 05/23/96 Last Update Date: 11/01/96 Last Major Revision Date: 10/25/96 MNCD4052BM-X REV 1A0 DUAL 4-CHANNEL ANALOG MULTIPLEXER/DEMULTIPLEXER General Description These analog multiplexers/demultiplexers are digitally controlled analog switches having

CD4053BMJ/883(SMD)

Abstract: CD4053BM MM4653
Contextual Info: MILITARY DATA SHEET Original Creation Date: 05/23/96 Last Update Date: 11/01/96 Last Major Revision Date: 10/25/96 MNCD4053BM-X REV 1A0 TRIPLE 2-CHANNEL ANALOG MULTIPLEXER/DEMULTIPLEXER General Description These analog multiplexers/demultiplexers are digitally controlled analog switches having

transistors 1UW 18

Abstract: mosfet HRF3205 1AV Series
Contextual Info: HRF3205, HRF3205L, HRF3205S HARRIS S E M I C O N D U C T O R 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs January 1998 Features Description • 1 00A Note 1 , 55V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

75332P3

Abstract: 75332S3 75332G3 huf75332G3
Contextual Info: HUF75332G3, HUF75332P3, HUF75332S3, HUF75332S3S HARRIS S E M I C O N D U C T O R 52A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs March 1998 Features ^ • 5 2 A ,5 5 V M • Ultra Low On-Resistance, ros ON = Description These N-Channel power M OS­

Contextual Info: TO SH IB A TC74HC133AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC133AP, TC74HC133AF 1 3 -INPUT NAND GATE The TC74HC133A is a high speed CMOS 13-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent