DIODE 200 1W Search Results

1Z51

Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 s

1Z10

Abstract: 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A 1Z390
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 µs

1Z10

Abstract: 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A 1Z390
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 s

1Z12

Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12A 1Z13 1Z30 1Z30A 1Z390
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation :P=1W Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 µs : VZ = 6.2 V ~ 390 V

1Z16

Abstract: 1Z47 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs Zener Voltage

1z390

Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs Zener Voltage

1Z150

Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A 1Z390
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS l Average Power Dissipation : P = 1W l Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs

1N4757A

Abstract: 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A
Contextual Info: RECTRON 1N4728A THRU 1N4757A SEMICONDUCTOR TECHNICAL SPECIFICATION 1W 5% DO-41 ZENER DIODE Absolute Maximun Ratings Ta=25oC Items Power Dissipation Power Derating (above 50 oC) Forward Voltage @If = 200 mA Vz Tolerence Junction Temp. Storage Temp. Dimensions

Contextual Info: RECTRON 1N4728B THRU 1N4757B SEMICONDUCTOR TECHNICAL SPECIFICATION 1W 5% DO-41 ZENER DIODE Absolute Maximun Ratings Ta=25oC Items Power Dissipation Power Derating (above 50 oC) Forward Voltage @If = 200 mA Vz Tolerence Junction Temp. Storage Temp. Dimensions

Contextual Info: 1SMA4741-200Z Surface-mount Silicon Zener Diode Voltage range 11-200 Volts 1W Peak Power SMA/DO-214AC FEATURES For surface-mount applications in order to optimize board space Low-profile package Built-in strain relief Glass-passivated junction Low inductance

1N4742A JEDEC

Abstract: 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A Z1200A
Contextual Info: 1N4728A THRU Z1200A 1W EPITAXIAL ZENER DIODE FEATURES DO-41 • Complete voltage range 3.3 to 200 Volts • High peak reverse power dissipation • High reliability • Low leakage current 1.00 25.4 MIN. 0.108 (2.74) 0.078 (1.99) MECHANICAL DATA 0.205 (5.20)

Contextual Info: TOSHIBA 1Z6.2~1Z390,1Z6.8A~1Z30A TO SHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2-1Z390, 1Z6.8A-1Z30A Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS & Average Power Dissipation : P=1W Peak Reverse Power Dissipation : P r s M“ 200W at tw = 200/¿s

ZENER DIODE 2.7V 1W

Abstract: 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A 1N4746A 1N4741A-1M200Z
Contextual Info: 1N4741A-1M200Z Glass-Passivated Junction Silicon Zener Diode Voltage range 11-200 Volts 1W Peak Power DO-41 FEATURES Low profile package Built-in strain relief Glass-passivated juction Low inductance Typical IR less than 5.0uA above 11V High temperature soldering guaranteed:

T 1Z12

Abstract: 1z12 toshiba
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A T O SH IB A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A 1Z3QA Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS • • • • Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : P r SM~^ÛOW at ^ = 200/^8

do-201 footprint

Abstract: be st smb STTH4R02 STTH4R02B STTH4R02D STTH4R02FP STTH4R02S STTH4R02U
Contextual Info: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt

Contextual Info: STTH2R02-Y Automotive ultrafast recovery diode Features • very low conduction losses ■ negligible switching losses ■ low forward and reverse recovery times ■ high junction temperature ■ AEC-Q101 qualified A K A Description K The STTH2R02 uses ST's new 200 V planar Pt

1N914

Contextual Info: • 1N914UR AVAILABLE IN JAN, 1N914UR and CDLL914 JANTX, AND JANTXV PER MIL-PRF-195QQ/116 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C

do-201 footprint

Abstract: STTH4R02 STTH4R02B STTH4R02D STTH4R02FP STTH4R02S STTH4R02U transistor p2w 4r2s
Contextual Info: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt

SMC/DOC-0000181564

Contextual Info: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt

808nm 1W laser diode

Abstract: 808nm 1W 808nm W0808 PCW-CS-200-W0808 808nm VCSEL Laser diode laser 808nm 200mW laser diode 200mw
Contextual Info: 200mW Multi-Mode 808nm VCSEL Diode Part # PCW-CS-200-W0808 • • • • • Vertical-Cavity Surface-Emitting Laser technology >200mW CW multi-mode power at 808nm Circular, low-diverging beam Custom wavelengths available 808-1064nm Custom packaging available (submount, Cmount, TO can)

1ZB36

Abstract: 1ZB220-Y ZB30 1ZB20 zener 1ZB30 DIODE 1zb36 zener B5.1 ZB91 B5.1 zener ZB2 ZENER
Contextual Info: 1ZB6.8 1ZB390 SILICON DIFFUSED TYPE ZENER DIODE CONSTANT VOLTAGE REGULATION. TRANSIENT SUPPRESSORS. . Average Power Dissipation : P=1W . Peak Reverse Power Dissipation : Pr s m = 200W at tw=200 Js . Zener Voltage : Vz=6.8~390V . T o l e r a n c e of Z e n e r V o l t a g e

Contextual Info: STTH1202 Ultrafast recovery diode Main product characteristics IF AV 12 A VRRM 200 V Tj (max) 175° C VF (typ) 0.82 V trr (typ) 18 ns K Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time

Contextual Info: STTH1202 Ultrafast recovery diode Main product characteristics IF AV 12 A VRRM 200 V Tj (max) 175° C VF (typ) 0.82 V trr (typ) 18 ns K Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time

jdsu 2380

Abstract: 2360a JDSU 2400 laser diode jdsu laser diode 6 GHz
Contextual Info: COMMERCIAL LASERS Diode Lasers, 0.5 to 4.0 W, 8xx nm 2300 Series Key Features • 0.5, 1.2, 2.0 and 4.0 W CW power • 50, 100, 200 and 500 µm apertures • High-efficiency MOCVD quantum well design • Open heatsink package • High reliability Applications