DIODE 224 Search Results

pn junction diode structure

Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Contextual Info: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss

triac tic 236

Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Contextual Info: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD

AN-994

Abstract: C-150 EIA-541 IRFR120
Contextual Info: PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor irf 645

Abstract: diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250
Contextual Info: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor irf 645

Abstract: AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120
Contextual Info: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

AN-994

Abstract: C-150 EIA-541 IRFR120 of transistor C 4212
Contextual Info: PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

BCS028N06NS

Abstract: 028N06NS DC1502
Contextual Info: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a

Hitachi DSA002726

Contextual Info: HL1553 1.55 µm Laser Diode with EA Modulator Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a

A2 DIODE

Abstract: DIODE 40c 0644 A5 DIODE MONOLITHIC DIODE ARRAYS marking Z4 TVS 200 diode 63-37 A4 marking diode C 12 PH diode DIODE marking A2
Contextual Info: TVS Diode Arrays TVS Avalanche Diode Array in a Unipolar Chip Scale Package SP0504BAC, SP0508BAC, SP0516BAC This family of avalanche diode arrays are designed for ESD protection and offered in an ultra small chip scale package. The multi-channel devices are used to help protect sensitive digital or

laser diode LT

Abstract: NDL5733P
Contextual Info: DATA SHEET NEC LASER DIODE MODULE NDL5733P ELECTRON DEVICE 1 310n m InGaAsP DC-PBH LASER DIODE 14 PIIM DIP MODULE W ITH SINGLEMODE FIBER DESCRIPTION NDL5733P is a 1 310 nm laser diode DIP module w ith singlemode fib e r and internal thermo-electric cooler. It is designed fo r a

ZENER DIODE t2

Abstract: philips data book zener diode AS 108-120 BP317 BZD142 BZD142-68 philips zener diode IEC 60060-1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BZD142 ZenBlockTM; zener with integrated blocking diode Preliminary specification 2000 Dec 19 Philips Semiconductors Preliminary specification ZenBlockTM; zener with integrated blocking diode BZD142

Contextual Info: WT-224DV06 Zener Diode Chips for ESD Bidrectional Protection 1. Feature: 1-1 chips, Device NO. WT-224DV06 2. Structure: 3. Size: 2-1. Planar type : N/P/N Diode. 2-2. Electrodes : Top side : Aluminum Alloy. Back side : Gold Layer. 3-1. Chip size : 24 mils x 24 mils 600 m x 600 μm .

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

philips datasheet surface mount zener diode

Abstract: philips data book zener diode ZENER DIODE t2 test SOD87 BZD142W BZD142W-68 M3D121 philips zener diode philips zener diode 47
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BZD142W ZenBlock; zener with integrated blocking diode Product specification 2000 May 01 Philips Semiconductors Product specification ZenBlock; zener with integrated blocking diode BZD142W FEATURES

IEC 60060-1

Abstract: 600601 TOPSWITCH BZD142W BZD142W-68 M3D121 08603 MAM433
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D121 BZD142W ZenBlockTM; zener with integrated blocking diode Product specification Supersedes data of 2000 May 01 2001 Oct 10 Philips Semiconductors Product specification ZenBlockTM; zener with integrated blocking diode

BIR-NM23C1

Abstract: 100C
Contextual Info: BRIGHT LED ELECTRONICS CORP. INFRARED EMITTING DIODE SPECIFICATION MOBICON Ilectrra ic Components COMMODITY : Side look Package Imfrared Emitting Diode DEVICE NUMBER : BIR-NM23C1 APPLICATIONS • Automatic Control System *Mouse PACKAGE DIMENSIONS 4.5 .177 ±0.1

Contextual Info: N E C ELECTRONICS INC b£E ]> • b427525 003?=]^ T4Ü BINECE DATA SHEET NEC LASER DIODE MODULE NDL5776P ELECTRON DEVICE 1 550 nm InGaAsP DC-PBH PULSED LASER DIODE 14 PIN DIP MODULE W ITH SINGLEMODE FIBER DESCRIPTION NDL5776P is a 1 550 nm pulsed laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is

1031 sh

Abstract: diode UF 400
Contextual Info: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 1031 SH 45T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten

Contextual Info: APT30DL60BCT G 600V 30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

SH 1031

Contextual Info: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 1031 SH 45T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten

Contextual Info: APT30DL60BCT G 600V 30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

Contextual Info: APT30DL60BCT G 600V 30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)