DIODE 24 78 Search Results

D 819

Contextual Info: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V

BAP64-04W

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP64-04W Silicon PIN diode Preliminary specification 2000 May 24 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-04W PINNING FEATURES • High voltage, current controlled PIN DESCRIPTION

SMD SOT23 a41

Abstract: smd code A4p a41 smd diode smd A4p A4p smd sot23 a4p
Contextual Info: DISCRETE SEMICONDUCTORS [Mm SMEET BAV70 High-speed double diode 1999 May 05 Product specification Supersedes data of 1997 Nov 24 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed double diode BAV70 FEATURES DESCRIPTION

Contextual Info: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C

Contextual Info: IXGH 12N100U1 IXGH 12N100AU1 Low VCE sat IGBT with Diode High Speed IGBT with Diode VCES ^C25 V ¥ CE(sat) 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V TO-247 SMD* E Symbol Test Conditions v CES VcOR Td = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M H VGES v SBB

Contextual Info: MITSUBISHI DIODE MODULES RM500DZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM500DZ/UZ-M,-H,-24,-2H Average forward current . 500A Repetitive peak reverse voltage . 400/800/1200/1600V • DOUBLE ARMS • Insulated Type No t

Contextual Info: MITSUBISHI DIODE MODULES RM75TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM75TC-M,-H,-24,-2H DC output current . 150A Repetitive peak reverse voltage . 400/800/1200/1600V • 3 phase bridge • Insulated Type • UL Recognized

k2a2

Contextual Info: MITSUBISHI DIODE MODULES RM500DZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM500DZ/UZ-M,-H,-24,-2H Average forward current . 500A Repetitive peak reverse voltage . 400/800/1200/1600V • DOUBLE ARMS • Insulated Type No t

Contextual Info: MITSUBISHI DIODE MODULES RM75TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM75TC-M,-H,-24,-2H DC output current . 150A Repetitive peak reverse voltage . 400/800/1200/1600V • 3 phase bridge • Insulated Type • UL Recognized

RM500HA-M

Contextual Info: MITSUBISHI DIODE MODULES RM500HA-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM500HA-M,-H,-24,-2H • IF AV • VRRM Average forward current . 500A Repetitive peak reverse voltage . 400/800/1200/1600V • ONE ARM • Insulated Type

RM75TC-M

Abstract: E80276
Contextual Info: MITSUBISHI DIODE MODULES RM75TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM75TC-M,-H,-24,-2H • IO • VRRM DC output current . 150A Repetitive peak reverse voltage . 400/800/1200/1600V • 3 phase bridge • Insulated Type

DIODE smd marking A4t

Abstract: marking A4t sot23 smd a4t smd marking code A4t A4t smd diode a4t A4T SOT23 smd A4t SOT23 smd code A4p smd diode A4T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV70 High-speed double diode Product specification Supersedes data of 1997 Nov 24 1999 May 05 Philips Semiconductors Product specification High-speed double diode BAV70 FEATURES DESCRIPTION • Small plastic SMD package

Contextual Info: MITSUBISHI DIODE MODULES RM500DZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM500DZ/UZ-M,-H,-24,-2H Average forward current 800A Repetitive peak reverse voltage . 400/800/1200/1600V • DOUBLEARMS • Insulated Type • If AV • V rrm

Contextual Info: MITSUBISHI DIODE MODULES RM500DZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM500DZ/UZ-M,-H,-24,-2H • IF AV • VRRM Average forward current . 500A Repetitive peak reverse voltage . 400/800/1200/1600V • DOUBLE ARMS • Insulated Type

Contextual Info: MITSUBISHI DIODE MODULES RM500HA-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM500HA-M,-H,-24,-2H Average forward current 500A Repetitive peak reverse voltage . 400/800/1200/1600V • ONE ARM • Insulated Type • If AV • V rrm APPLICATION

APT100S20B

Abstract: APT20M20LLL Microsemi Avalanche 200v
Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode APT100S20B 200V 120A 1 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Soft Recovery Characteristics • Low Losses

APT20M36BLL

Abstract: APT30D20B APT30D20S
Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT30D20B APT30D20S 200V 200V 30A 30A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode APT30S20B 200V 30A 1 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics

Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT30D40B APT30D40S 400V 400V 30A 30A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode APT100S20B 200V 120A 1 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Soft Recovery Characteristics • Low Losses

APT15DQ60B

Abstract: APT15DQ60S APT6017LLL
Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode APT15DQ60B APT15DQ60S D3PAK 1 2 600V 600V 15A 15A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT30D40B APT30D40S 400V 400V 30A 30A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

APT30M30LLL

Abstract: APT60D40B APT60D40S
Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT60D40B APT60D40S 400V 400V 60A 60A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT15D60B APT15D60S 600V 600V 15A 15A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times