DIODE 2524 Search Results

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Contextual Info: 5082-2524 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0 Maximum Conversion Loss (dB)

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

R57-1D.5-5/6

Abstract: R57-1D.5-5/6D R57-5D.25-5/6D R56S-5D.5-6D R56-1D.5-6 R56S-5D.5-6 R57-1D.5-12 R56-1D.5-24 2d524 R57-1D.5-12D
Contextual Info: Features ● ● ● ● Standard Industry Packaging 5V DC Versions Operate Directly from DTL or TTL Circuits Internal Clamping Diode Version D-suffix Flame Retardent Epoxy Case is Immersion Resistant R56 & R57 Series General Purpose DIP (dual in-line package) DC Reed Relays

SN76670

Abstract: sn76003 SN76660 SN76640 SN7401 SN72747 SN76013 SN76630 SN72820 SN76001
Contextual Info: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type{$ listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

CGS74LCT2524

Abstract: CT2524
Contextual Info: CGS74LCT2524 EHNational J b f l Semiconductor PRELIMINARY CGS74LCT2524 1 to 4 Minimum Skew 450 ps 3V Clock Driver General Description Features This minimum skew clock driver is a 3V option of the current '2524 Minimum Skew Clock Driver and is designed for

2524

Abstract: CT2524
Contextual Info: 2524 ¡2 3 N a tio n a l mm Semiconductor CGS74CT2524 1 to 4 Minimum Skew 450 ps Clock Driver General Description Features These minimum skew clock drivers are designed for Clock Generation and Support (CGS) applications operating at high frequencies. This device guarantees minimum output

mps2524

Contextual Info: PRELIMINARY MPS-252409-85 1.7 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +38 dBm TYPICAL IP3 • +24 dBm TYPICAL P1dB • 11 dB TYPICAL GAIN • +10.0 VOLT OPERATION

Contextual Info: PRELIMINARY MPS-252409-85 1.7 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES .0 6 0 . 1 52 DkTwwon« tn inches and (mm) INPUT- Li ,130 OIA. P-SO) OUTPUT- i^ _ n • +38 dBm TYPICAL IP3

Contextual Info: TN2524 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON ^ G S (th ) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet 240V 6.0Q. 2.0V 1.0A T N 2524N 8 T N 2524N D * Sam e as SO T-89. P roduct supplied on 2000 piece ca rrie r tape reels,

RC723DP

Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
Contextual Info: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525

tda 2038

Abstract: TDA3791 tda vertical IC tv crt tda 3658 dbx 2151 TDA8302 tda9854 TDA 3030 tda 2790 transistor BF960
Contextual Info: Philips Semiconductors Selection guide Alphanumerical index ALPHANUMERICAL INDEX PAGE 80C528; 83C528 CMOS single-chip 8-bit microcontroller; l2C-bus 80C652; 83C652 CMOS single-chip 8-bit microcontroller; l2C-bus 44 50 83C654 CMOS single-chip 8-blt microcontroller; l2C-bus

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

Contextual Info: International I R Rectifier PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IG B T technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kH z

peltier cooler wiring diagram

Abstract: 801-2003-01 Cambion peltier regulator 48V 48V 100W zener diode Cambion 801 118ME mth5n100 Rosemount RTD wiring diagram for a 20v ac to 12v dc transformer
Contextual Info: urm TECHNOLOGY Application Note 25 September 1987 Switching Regulators for Poets A Gentle Guide for the Trepidatious Jim Williams The above title is not happenstance and was arrived at after considerable deliberation. As a linear 1C manufac­ turer, it is our goal to encourage users to design and build

C82 diode

Abstract: C81 diode
Contextual Info: International IOR Rectifier PD - 5.067A GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V CES= 1200V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz

LM 1709

Abstract: GA150TD120U DT12-6
Contextual Info: PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200 V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

Contextual Info: In te r n a tio n a l IQ R R e c tifie r p d p re lim in a ry - s .o bza G A 1 5 0 T D 1 2 0 U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es V • G en eratio n 4 IG BT te ch n o lo g y • S tan dard : O p tim ize d for m inim um saturation

RG2 DIODE

Abstract: GA150TD120U DT12-6
Contextual Info: PD - 5.067A PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

Contextual Info: International I R Recti fi Gf PD - 5.067A PR ELIM IN A R Y GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V • G e n e ratio n 4 IG B T technology ces = 1200V • S tand ard : O p tim ize d for m inim um saturation v o lta g e and o perating freq u en cies up to 1 0 k H z

Contextual Info: C2500 Series EURO CASSETES 3 0 0 - 4 0 0 W AT T S A C / D C - D C / D C - B AT T E R Y C H A R G E R S S I N G L E O U T P U T FEATURES • • • • • • • DC input 18 V - 380 V AC input 1 or 3-phase, 47 - 400 Hz DC output 5-290V Continuous short circuit protection