DIODE 278 Search Results

biconvex lens with focal length 1 m and diameter 25.4 mm

Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Contextual Info: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power

hc4-dc12v

Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
Contextual Info: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,

triac tic 236

Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Contextual Info: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD

BA792

Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:

SMD MARKING 541 DIODE

Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF

UHF/VHF

Contextual Info: 5082-2787 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2787 is a Silicon Small Signal Schottky Diode Designed for UHF/VHF Mixers, and Video Detector Applications. Color Band Indicates Cathode. RF Parameters are Sample Tested. MAXIMUM RATINGS

c 2785

Contextual Info: 5082-2785 SCHOTTKY MEDIUM BARRIER DIODE PACKAGE STYLE 860 DESCRIPTION: The ASI 5082-2785 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Low noise fugure MAXIMUM RATINGS: PDISS 125 mW @ TA = 25 °C

str 6707

Abstract: BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72 BAT254
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L4 dbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic

semikron skiip 400 gb

Abstract: semikron skiip 33 1513gb172 semikron skiip 31 semikron skiip SKIIP APPLICATION SKIIP DRIVER skiip gb 120 PX16 SKIIP 33
Contextual Info: SKiiP 1513GB172-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

1203GB122-2DW

Abstract: semikron skiip 3
Contextual Info: SKiiP 1203GB122-2DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

semikron skiip 3

Abstract: semikron skiip 400 gb 1513GB122-3DL PX16
Contextual Info: SKiiP 1513GB122-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

semikron skiip 400 gb

Abstract: semikron skiip 31 1803GB172-3DW semikron thermal switch
Contextual Info: SKiiP 1803GB172-3DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

NX5320EH

Abstract: NX5320EH-AZ PX10160E
Contextual Info: LASER DIODE NX5320EH 1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX5320EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel

1013GB122-2DL

Abstract: semikron skiip 1013gb122-2dl semikron skiip 400 gb semikron skiip 20 semikron skiip 3 PX16 MDC 2301
Contextual Info: SKiiP 1013GB122-2DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

si 1125 hd

Abstract: semikron skiip 400 gb 1513GB173-3DL PX16
Contextual Info: SKiiP 1513GB173-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

semikron skiip 400 gb

Abstract: SemiSel 1803GB173-3DW
Contextual Info: SKiiP 1803GB173-3DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

semikron skiip 342

Abstract: semikron skiip 400 gb 12960 semikron skiip 12-0-12 transformer used 24v dc supply SKIIP APPLICATION skiip gb 120 1813GB123-3DL PX16 B75 diode
Contextual Info: SKiiP 1813GB123-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

semikron skiip 33

Abstract: "Humidity Sensor" Mk 33 632GB120-315CTV
Contextual Info: SKiiP 632GB120-315CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

PX10160E

Contextual Info: DATA SHEET LASER DIODE NX5320EH 1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX5320EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel

skiip 24

Contextual Info: SKiiP 1013GB122-2DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms

Contextual Info: SKiiP 1013GB172-2DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms

HL6312G

Abstract: 1550 laser diode infrared Laser diode 336-1027-785 Laser Diode Mounts 300-0380-780 lens for laser diode lens laser diode Aspheric Lens TO Can Optima Precision
Contextual Info: Laser Diode Mounting Kits For Ø5.6mm and Ø9mm Laser Diodes — Complete Mounting System with Collimating Lens If your work involves laser diodes, you’ll appreciate the benefits of Optima’s laser diode mounting systems. Components in the system facilitate mounting a laser diode, collimating or focusing the beam, and aligning the beam

diode in 400

Contextual Info: IW0140A4 ULTRAFAST RECTIFIER DIODE ARRAY Pinning Electric scheme 1 8 2 7 3 6 4 5 1 8 2 7 3 6 4 5 Ultrafast diode array designed for use in systems of protection of telephone lines from overvoltage. The device is available in DIP-8 case MAXIMUM RATINGS for every diode of assembly

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and