DIODE 2A 600V Search Results

diode mur

Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Contextual Info: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.

STTA206S

Abstract: SMC 4A 400v diode 400v 2A ultrafast DIODE 2A 400V TRANSISTOR 45 P3
Contextual Info: STTA206S TURBOSWITCH  "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY

DI 380 Transistor

Abstract: SOD15 transistor marking p3 STTA206S diode 400v 2A ultrafast marking t51 transistor p2 marking
Contextual Info: STTA206S  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE

Contextual Info: STTA206S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2A V rrm 600V trr (typ) V f (max) 20ns 1.5V FEATURES AND BENEFITS • SPECIFIC TO "FREEWHEEL MODE' OPERATION: FREEWHEEL OR BOOSTER DIODE ■ ULTRA-FAST AND SOFT RECOVERY

mosfet 600v

Abstract: STTA206S DU MARKING
Contextual Info: STTA206S TURBOSWITCH  "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS c u d SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY

STTA206S

Abstract: diode 400v 2A ultrafast
Contextual Info: STTA206S TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATION: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN

GP20DL

Abstract: DO-204AC
Contextual Info: ZOWIE Low VF Rectifier Diode GP20DL THRU GP20ML Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop

DO-204AC

Contextual Info: ZOWIE Low VF Rectifier Diode GP20DLH THRU GP20MLH Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop

DIODE T53

Abstract: transistor marking p3 SOD15 IGBT trr igbt high frequency 1200V STTA212S DI 380 Transistor TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE DIODE marking ED diode tURBOSWITCH
Contextual Info: STTA212S  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE

20KDA60

Contextual Info: ｓ DIODE 20KDA60 Type : OUTLINE DRAWING 2A 600V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.38g Rating

diode sg 42

Abstract: ed1b
Contextual Info: rz7 SGS-THOMSON ^ 7 # MûœËŒOT «® STTA206 S TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2A V rrm 600V (typ) 20ns (max) 1.5V tr r Vf PRELIMINARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE

STTB206S

Abstract: marking t61
Contextual Info: STTB206S  TURBOSWITCH  ”B”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 45ns VF (max) 1.3V A K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION

R0813

Abstract: CSD02060G csd02060 q 406 813 CSD02060A D02060
Contextual Info: CSD02060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF AVG = 2A Qc Features • • • • • • • = 7nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

Contextual Info: ZOWIE Low VF Rectifier Diode GP20DLH THRU GP20MLH Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop o 2.0 Ampere operation at TA=55 C with no thermal runaway

STTA206S

Abstract: diode 400v 2A ultrafast SMC 4A 400v
Contextual Info: STTA206S  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTERDIODE ULTRA-FAST AND SOFT RECOVERY

DG1V60

Abstract: DIODE SMD 10A 78 DIODE SMD smd diode code ja
Contextual Info: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE DG1V60 Unit : mm Weight : 0.011g（typ.） Package：G1F 600V 2A 特長 ロット記号（例） Date code 品名略号 Type No. • 小型 SMD • 耐湿性に優れ高信頼

s2vb

Abstract: s2vb shindengen S2VB* bridge S2VB 20 40 S2VB60
Contextual Info: SHINDENGEN Square In-line Package Bridge Diode S2VB60 OUTLINE DIMENSIONS Case : S2VB Unit : mm 600V 2A RATINGS ● Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO 50Hz sine wave, R-load, Without heatsink, Ta=40℃

transistor marking 2A H

Abstract: STTA212S
Contextual Info: STTA212S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 2A V rrm 1200V (typ) 65ns (max) 1.5V trr Vf FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPEFIATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION

STTA212S

Contextual Info: STTA212S  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY

STTA212S

Contextual Info: STTA212S  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY

DIODE T53

Abstract: STTA212S SWITCHING DIODE 600V 2A
Contextual Info: STTA212S TURBOSWITCH  "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION

Contextual Info: rz7 SGS-THOMSON ^7# MûœËŒOT «® STTB206S TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2A V rrm 600V trr (typ) 45ns Vf (max) PRELIMINARY DATASHEET 1.3V FEATURES AND BENEFITS • SPECIFIC TO ThE FOLLOWING OPEFtATIONS:

AN-994

Abstract: IRF530S IRG4BC10SD-L IRG4BC10SD-S IRL3103L
Contextual Info: PD - 95780 IRG4BC10SD-SPbF IRG4BC10SD-LPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

Transistor Mosfet N-CH 400V 40A

Abstract: AN-994 IRG4BC10SD-L IRG4BC10SD-S
Contextual Info: PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4