DIODE 304 Search Results

DIODE A46

Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
Contextual Info: 1996-2012:QuarkCatalogTempNew 9/20/12 3:44 PM Page 1996 INTERCONNECT TEST & MEASUREMENT 25 SEMIPACK Isolated Diode/Diode and Thyristor/Diode Modules SEMIPACK® Isolated Diode/Diode and Single Diode Modules 27 Amp to 700 Amp RoHS SKKD 46/16 Stock No. Mfr.’s

pn junction diode structure

Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Contextual Info: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

diode 5082-3042

Abstract: 5082-3042
Contextual Info: 5082-3042 FAST SWITCHING PIN DIODE DESCRIPTION: The ASI 5082-3042 is a Switching Diode Designed for low power Applications such as RF duplexers, antenna switching matrices, and time multiplex filters. PACKAGE STYLE 01A FEATURES INCLUDE: • Low series resistance

MIE-304G1

Abstract: 840 nm GaAs
Contextual Info: GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304G1 Package Dimensions The MIE-304G1 is an infrared emitting diode in GaAs Unit : mm inches technology molded in water clear plastic package. ψ3.00 (.118) 5.25 (.207) 1.00 (.040) 4.00

MIE-304L3

Contextual Info: GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE MIE-304L3 Description Package Dimensions The MIE-304L3 is an infrared emitting diode in Unit : mm inches GaAlAs on GaAlAs technology molded in water clear ψ3.00 (.118) plastic package. 5.25 (.207) SEE NOTE 2 1.00

MIE-304A2

Abstract: opto 921 high power infrared led
Contextual Info: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304A2 Package Dimensions The MIE-304A2 is a high power infrared eimtting Unit: mm inches diode in GaAs technology with AlGaAs window 3.00 (.118) coating molded in water clear plastic package.

high power infrared led

Abstract: MIE-304A4 Unity Opto Technology
Contextual Info: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304A4 Package Dimensions The MIE-304A4 is a high power infrared eimtting Unit: mm inches diode in GaAs technology with AlGaAs window 3.00 (.118) coating molded in water clear plastic package.

20 GHz PIN diode

Abstract: hp pin diode 10 GHz pin diode 3041 "Direct Replacement" hp 5082 7650 pin diode microstrip 6 GHz PIN diode
Contextual Info: 5082-3041 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: PACKAGE STYLE M-50 The 5082-3041 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 GHz to 18 GHz. FEATURES INCLUDE: • Direct Replacement for HP 5082-3041

Contextual Info: 5082-3040 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: PACKAGE STYLE M-50 The ASI 5082-3040 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 GHz to 18 GHz. FEATURES INCLUDE: • Direct Replacement for HP 5082-3040

11029 diode

Abstract: 3041N
Contextual Info: Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode Zieldaten D 3041N Maßbild 1: Anode/Anode 1 2 2: Kathode/Cathode Seite/page 3/7 Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode R,t – Werte R R,T-Werte beidseitig two-sided

5082-3040

Abstract: 10 GHz pin diode 20 GHz PIN diode 5082-3040 equivalent asi304
Contextual Info: 5082-3040 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: PACKAGE STYLE M-50 The ASI 5082-3040 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 GHz to 18 GHz. FEATURES INCLUDE: • Direct Replacement for HP 5082-3040

diode 30a 400v

Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
Contextual Info: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

IRGP30B60

Abstract: C-150 IRGP30B60KD-E
Contextual Info: PD - 94388A IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

12V 30A diode

Abstract: swiching 30A current source IRGP30B60KD-EP 035H C-150 IRFPE30
Contextual Info: PD - 95120 IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRGP30B60KD-EP
Contextual Info: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

zener diodes color coded

Abstract: VS-2511 GB 2510 vectron st VS-25XX voltage regulator pa66 viscosity
Contextual Info: VS-2511 Solid-State Viscosity Sensor & VB-2510 Shunt-Diode Barrier Operating Instructions Operating Instructions for the VS-2511 Solid-State Viscosity Sensor & VB-2510 Shunt-Diode Barrier 0359 Examination Certificate Number TÜV 12 ATEX 091790 X Group, Category, Type of Protections, Shunt-Diode Barrier type VB-2510:

XR 798 diode

Abstract: R0204
Contextual Info: SLU304XR SONY 800/700mW High Power Laser Diode with a Detachable Fiber Description SLU304XR is a high power laser diode based on the SLD 304XT w ith a detachable fiber. Direct coupling to a fib e r having an FC connector is possible w ith o u t any optical

Contextual Info: mn GaAs LIGHT-EMITTING DIODE “PIGTAIL’ 62017 TYPE GS 3040 OPTOELECTRONIC PRODUCTS DIVISION * HIGH INTENSITY GaAIAs VERSION AVAILABLE MINIATURE HIGH EFFICIENCY LED WITH NARROW BEAM ANGLE GLASS/METAL WELDED PACKAGE Mii 62071 is a P-N GaAs Infrared Light Emitting Diode in a lensed coaxial package designed to be

Contextual Info: O rdering num ber : EN 3048B _ SVC363 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Use F e a tu re s • Excellent matching characteristics because of composite type. • The number of manufacturing processes can be reduced and automatic mounting is possible because of

EVR20

Abstract: diode 1n4742 Diode DO12 1N47S2 IN4756 IN4748 EVR10 EVR16 EVR30 in4758
Contextual Info: 3869720 GENERAL DIODE C O R P _ GENERAL DIODE CORP 86D 00351 D 7"— / 3 flb _ DE Bflb'íTSO 0DG0351 b 1 WATT SILICON ZENER DIODES . . . cont’d TYPE TYPE 1N3041 1N 3042 1N3043 1N3044 1N304S 00-12 Do-12 Do-12 Do-12 Do-12 75 82 91 100 110