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    DIODE 30S2 Search Results

    DIODE 30S2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ30V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ36V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 30S2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IR 30S2

    Abstract: smd code marking 5h diode 30S2 30S2 RB551V-30S2 package CODE S2 SMD diode MARKING 5h smd diode 5H Diode smd 5H smd diode sod-323 marking code 03
    Contextual Info: CYStech Electronics Corp. Spec. No. : C301S2 Issued Date : 2004.02.18 Revised Date Page No. : 1/4 Small Signal Schottky Barrier diode RB551V-30S2 Description The RB551V-30S2 is a silicon Schottky barrier diode fabricated in planar technology, and encapsulated in a


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    C301S2 RB551V-30S2 RB551V-30S2 OD-323 OD-323 UL94V-0 IR 30S2 smd code marking 5h diode 30S2 30S2 package CODE S2 SMD diode MARKING 5h smd diode 5H Diode smd 5H smd diode sod-323 marking code 03 PDF

    IR 30S2

    Abstract: smd diode 5c SOD-323 smd diode schottky code marking 5A RB551V-30S2 diode 30S2 30S2
    Contextual Info: RB551V-30S2 Surface Mount Schottky Barrier Diode Voltage Range 30 Volts Current 0.5A Ampere SOD-323 Features 0.010 0.25 Typ. Min. 0.037(0.95) Max. Small plastic SMD package Ultra low VF, VF=0.45 typ. at 0.5A High reliability Mechanical Data 0.106(2.70) 0.091(2.30)


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    RB551V-30S2 OD-323 OD-323, MIIL-STD-202, 25ambient IR 30S2 smd diode 5c SOD-323 smd diode schottky code marking 5A RB551V-30S2 diode 30S2 30S2 PDF

    ld5c

    Abstract: BUK443-100B BUK443 BUK443-100A raon
    Contextual Info: b TE N AMER PH ILI PS/ DI SCR ET E D • b 1=53^31 D D 30S2D P hilip s S e m ico n d u cto rs PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    DD30S2D BUK443-1OOA/B -SOT186 BUK443 -100A -100B -ID/100 ld5c BUK443-100B BUK443-100A raon PDF

    LA 4127 20 pin

    Contextual Info: Philips Semiconductors Preliminary specification 16-bit buffer/line driver; inverting; with 30S2 74LVC162540A series termination resistors; 3-State _74LVCH162540A FEATURES PIN CONFIGURATION • 5 volt tolerant inputs/outputs for interfacing with 5V logic


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    16-bit 74LVC162540A 74LVCH162540A 74LVCH162540A 74LVC 62540A LA 4127 20 pin PDF

    IC SEM 2105

    Contextual Info: JANSR2N7411 7 ^ r”r Formerly FSL9110R4 June1998 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET Features Description • 2.5A, -100V, ros ON = 1-30S2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s


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    FSL9110R4 -100V, 1-30S2 JANSR2N7411 O-205AF 254mm) IC SEM 2105 PDF

    A5 gnb 100

    Abstract: A5 gnb cerdip 300mil OEB47 30S2 74F30245 74F30640 N74F30245F N74F30245N N74F30640F
    Contextual Info: FAST 74F30245, 74F30640 Signetics Transceivers Product Specification FAST Products 'F30245 Octal 30f2 Transceivers, NINV Open-Collector With Enable + 3-State 'F30640 Octal 30S2 Transceivers, INV (Open-Collector With Enable + 3-State) FEATURES • Ideal fo r applications which require


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    74F30245, 74F30640 F30245 000764IS F30245 F30640 20/mA 500ns A5 gnb 100 A5 gnb cerdip 300mil OEB47 30S2 74F30245 74F30640 N74F30245F N74F30245N N74F30640F PDF

    11505A

    Abstract: diode zener 1n4002 10D10 diode 11708a 30S4 DIODE ir 10d10 diode 30S10 diode DIODE 10D1 34301a IR 10D4
    Contextual Info: Sem iconductors International Rectifier Zener Diodes & Silicon Rectifiers 10 W a ffs a f 95‘C B a s e - 5 % toteran ce co n tin u e d RE F E R E N C E T A B L E Max. D C Zener Current Zener Voltage Type Stock No. 1028.2T5 10Z9.1T5 10Z10T5 10Z11T5 10Z12T5


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    11701D 11702B 10Z10T5 It703X 10Z11T5 11704R 10Z12T5 11705G 10Z13T5 11706E 11505A diode zener 1n4002 10D10 diode 11708a 30S4 DIODE ir 10d10 diode 30S10 diode DIODE 10D1 34301a IR 10D4 PDF

    Contextual Info: V M V TC Inc. Value the Customer 3 1 2 1 6 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 D E S C R IP T IO N The VM31216 is a high-performance, low-power, bipolar monolithic read / write preamplifier designed for use with two-ter­


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    16-CHANNEL, 85nV/VHz 32R2015 VM31216 600nH, PDF

    74ALVT162245

    Contextual Info: Philips Semiconductors Product specification 2.5V/3.3V 16-bit transceiver with 30Q termination resistors 3-State 7dAl VT1 R 0 0 A t- FEATURES DESCRIPTION • 16-bit bidirectional bus interface The 74ALVT162245 is a high-performance BiCMOS product designed for V cc operation at 2.5V or 3.3V with I/O compatibility up


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    16-bit 12mA/-12mA 500mA 74ALVT16 10MHz 500ns 74ALVT162245 PDF

    Contextual Info: PROGRAMMABLE FU JITSU SCHOTTK Y 16384-BIT MB 7134E-W READ ONLY MEMORY November 1985 Edition 1.0 SCHOTTKY 16384-BIT DEAP PROM 4096 WORDS x 4 BITS This Fujitsu MB 7T34-W is high speed Schottky TT L electrically field pro­ grammable read only memory organized as 4096 words by 4 bits. With threestate outpus on the MB 7134-W, memory expansion is simple.


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    16384-BIT 7134E-W 7T34-W 134-W, DIP-20C-C03 8C-A01) 28-PAD LCC-28C-A02) PDF

    df diode

    Contextual Info: 30S SERIES Microsemi Corp. SCOTTSDALE, A l F o r m o re in fo rm a tio n call: 6 0 2 94 1-6 3 0 0 DESCRIPTION/FEATURES 3 AM P M E D IU M POWER SIL IC O N RECTIFIER D IO D E S • ECONOMICAL SERIES • HIGH SURGE, 150 A M P M A XIM U M • UNIVERSAL REPLACEM ENT FOR MANY GLASS, EPOXY,


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    30S10 df diode PDF

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17 PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 PDF

    an6311

    Abstract: Widlar AN-1 LT 7210 zener diode LM373 lm170 10 amp HIGH VOLTAGE FAST-SWITCHING npn darlington lm741 LH0002N lm380 equivalent national an-2 switching regulator
    Contextual Info: rABMMiirfiHMiarggsagg LINEAR H ? M g / 0 K]g KCA COMPONENTS, 8 WALLIS COUBT «•EXlNGTON, MASS, « 1 7 3 6 1 7 8 6 1 -9 0 2 4 National P R E F A C E The p u rp o se of th is h a n d b o o k is to p ro v id e a fu lly in d e xe d and c ro s s -re fe re n c e d c o lle c tio n of lin e a r in ­


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    lw 293

    Contextual Info: ## VM 3200 2 OR 4-CHANNEL, 3.3 TO 5-VOLT, TWO-TERMINAL, THIN-FILM/MIG HEAD, READ/WRITE PREAMPLIFIER August, 1994 FEATURES • High Performance - Read Gain = 300, 200 or 150 V/V - Input Noise = 0.48nV/VHz Typical - Head Inductance Range = 0 . 2 - 5 nH - Write Current Range 2 - 2 5 mA


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    48nV/VHz VM3200 100mV, 10MHz lw 293 PDF

    vm715

    Contextual Info: VM 7160 VTC Inc. V a lu e th e C u s to m e r 2, 4 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER WITH MULTIPLE SERVO WRITE CAPABILITY August,1994 FE A T U R E S • High Performance - Read Gain = 200 - 300 V/V Typical - Input Noise 0.75 nV/VHz Maximum


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    VM7162 VM7164 VM7168 10OmV, 10MHz 100mV, vm715 PDF

    LA20PF

    Abstract: 1FW ST 1FW 74 RU4A 21V3 3053s
    Contextual Info: B.3V LOW SKEW 1WIWIW1W ED CLOCK I Integrated Device Technology, Inc. MUTAKT AND m -PRCUM . TEJW'ERA'nJRE RANGES 3.3V LOW SKEW PLL-BASED CMOS CLOCK DRIVER WITH 3-STATE FEATURES: < 0.5 MICRON CMOS Technology • Input frequency range: 10MHz - f2Q Max. spec


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    IDT54/74FCT388915T 10MHz 150MHz FCT88915T, MC88915T 350ps 50Qps 32/-16mA 3062dr* IDT54/74FCTMM15T LA20PF 1FW ST 1FW 74 RU4A 21V3 3053s PDF

    388915T

    Contextual Info: 3.3V LOW SKEW PLL-BASED CMOS CLOCK DRIVER WITH 3-STATE Integrated Device Technology, Inc. FEATURES: IDT54/74FCT388915T 70/ 100/ 133/150 PRELIMINARY is fed back to the PLL at the FEEDBACK input resulting in essentially zero delay across the device. The PLL consists of


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    IDT54/74FCT388915T 10MHz 150MHz FCT88915T, MC88915T 350ps 500ps 32/-16m 388915T PDF

    Contextual Info: 3.3V LOW SKEW PLL-BASED CMOS CLOCK DRIVER WITH 3-STATE Integrated Device Technology, inc. FEATURES: • 0.5 M IC R O N C M O S T e c h n o lo g y • Input fre q u e n c y range: 10M H z - f2 Q Max. spec (F R E C L S E L = H IG H ) • M ax. o u tp u t fre q u e n c y : 150M H z


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    IDT54/74FCT388915T 88915T 2S771 MIL-STD-883, 70MHz 100MHz 133MHz 150MHz PDF

    101ra100

    Abstract: 22RC10 71RA120 36RA80 101RC60 PR002W 40RCS60 151ra100 250pa120 250RA80
    Contextual Info: EUROPEAN CATALOGUE CATALOGO EUROPEO EUROPAISCHER KATALOG CATALOGUE EUROPEEN In tro d u c tio n The products specified in this shortform catalogue have been selected from the comprehensive range manufactured by the International Rectifier group of Companies.


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    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 PDF

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


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    200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032 PDF

    tic 1260 scr texas

    Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
    Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.


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    100VI

    Contextual Info: REJ09B0111-0110 R8C/13 Group 16 Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY/R8C/Tiny SERIES Rev. 1.10 Revision date: Apr 27, 2005 www.renesas.com Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products


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    REJ09B0111-0110 R8C/13 16-BIT R8C/13Group 100VI PDF