DIODE 343 18A Search Results

VN64GA

Abstract: 1rf820 irf150 IRF340 IRF742 diode 343 18a IRF740 IRF823 SILICONIX IRF740 IRF440
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\Wi iv iv ^ i v T T k iv r i i i i i v t i v u v iw i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220 Siliconix

irf740 equivalent

Abstract: irf340 "cross reference" IRF450 equivalent 2SK259 irf150 2SK134 equivalent 2sk135 equivalent IRF240 IRF351 2SK132
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160

Diode smd code 9a

Abstract: diode MARKING CODE 18A D09E60 IDP09E60 IEC61249-2-21
Contextual Info: IDP09E60 Fast Switching Diode Product Summary Features VRRM • 600 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

fast recovery diode 400v 5A

Abstract: IDD09E60
Contextual Info: IDD09E60 Preliminary data Fast Switching EmCon
Diode Product Summary Feature 600 V IF 9 A VF 1.45 V Tjmax 175 °C VRRM
600 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge P-TO252-3-1.
Low forward voltage
175°C operating temperature

D09E60

Abstract: IDB09E60 IDP09E60 PG-TO263-3-2 9A MARKING diode 343 18a
Contextual Info: IDB09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO263-3-2 • Low forward voltage • 175°C operating temperature

D09E60

Abstract: IDD09E60 A5016
Contextual Info: IDD09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling

Contextual Info: IDB09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage • 175°C operating temperature

A2118

Contextual Info: IDP09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO220-2-2. • Low forward voltage C • 175°C operating temperature

D09E60

Contextual Info: IDD09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling

Contextual Info: IDP09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO220-2-2. • Low forward voltage • 175°C operating temperature

d09e60

Contextual Info: IDD09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling

IDD09E60

Abstract: D09E60 J-STD-020A P-TO252
Contextual Info: IDD09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling

Contextual Info: International IO R Rectifier PD - 5.060 PRELIMINARY G A 100T S 1 2 0 U Ultra-Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features V q e s — 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: IDB09E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature VRRM • 600 EmConControlled technologytechnology 600VV Emitter • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO263-3-2

Contextual Info: International I R Recti fi G f PD - 5.060A PR E LIM IN A R Y GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz In hard switching, >200

GA100TS120UPBF

Contextual Info: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: PD - 91723 International I R Rectifier IRG4ZC71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, ts c =10ns, V c c = 3 6 0 V , T j = 125°C,

d09e60

Abstract: IDB09E60 IDP09E60 Q67040-S4482 Q67040-S4483
Contextual Info: IDP09E60 IDB09E60 Preliminary data Fast Switching EmCon
Diode Product Summary VRRM 600 Feature
600 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge IF 9 A VF 1.45 V T jmax 175 °C P-TO220-3.SMD
Low forward voltage V

Contextual Info: IDD09E60 Fast Switching Emitter Controlled Diode Product Summary Feature VRRM • 600V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature

D09E60

Abstract: Q67040-S4482 IDB09E60 IDP09E60 Q67040-S4483
Contextual Info: IDP09E60 IDB09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.

Contextual Info: IDB09E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary VRRM Feature 600VV Emitter • 600 EmConControlled technologytechnology 600 V IF 9 A VF 1.5 V T jmax 175 °C • Fast recovery • Soft switching 2 • Low reverse recovery charge

Contextual Info: PD 9.1469A International ICR Rectifier IRG4PC50FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .

Contextual Info: IDD09E60 Fast Switching Emitter Controlled Diode Product Summary VRRM Feature 600 V IF 9 A VF 1.5 V T jmax 175 °C • 600V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge PG-TO252-3 • Low forward voltage

GA100TS120U

Contextual Info: PD - 5.060A PRELIMINARY GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses