DIODE 348 Search Results

hsch 3486 zero bias schottky diode

Abstract: HSCH-3486 MA4E928B ma4e928B-54 "zero-bias schottky diode" HSCH3486 20 GHz PIN diode zero bias schottky diode detector
Contextual Info: HSCH-3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The HSCH-3486 is a Silicon Zero Bias Schottky Barrier Diode Designed for High Sensitivity Detector and Low Starved Mixer Applications up to 10 GHz. FEATURES INCXLUDE: • Replacement for HSCH3486 and MA4E928B-54

hsch 3486 zero bias schottky diode

Abstract: HSMS-2850 HSCH-3486 HSMS-8101 5963-0951E hsms-10-5
Contextual Info: FORWARD CURRENT HSCH-3486 The Zero Bias Schottky Detector Diode 1 Application Note 969 0.1 0.01 Introduction 0.1 A conventional Schottky diode detector such as the Avago Technologies HSMS-8101 requires no bias for high level input power — above one milliwatt. However,

Contextual Info: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The AS I3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. FEATURES INCLUDE: • Replacement for HP H S C H 3486 • -56 dBm TssTypical @ 10 G Hz

Power Diode 818

Abstract: ma4e928 "Advanced Semiconductor, Inc" ADVANCED SEMICONDUCTOR ASI3486 HSCH3486
Contextual Info: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The ASI 3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. PACKAGE STYLE 01 FEATURES INCLUDE: • Replacement for HSCH3486 and MA4E928series • -56 dBm TSS Typical @ 10 GHz

ma4e928

Abstract: ASI3486 10 GHz pin diode HSCH3486 color code diode HSCH-3486
Contextual Info: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The ASI 3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. PACKAGE STYLE 01 FEATURES INCLUDE: • Replacement for HSCH3486 and MA4E928 series • -56 dBm TSS Typical @ 10 GHz

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

australia heat sink

Abstract: ARR14C160 laser diode array
Contextual Info: Industrial Microphotonics Company 160W CW Laser Diode Array Part Number: ARR14C160 EIGHT-SHOOTER TM • Packaged Laser Diode Array · Available With Any Silver BulletTM Configuration · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF1400R12IP4 PrimePACK 3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Contextual Info: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

MGY30N60D

Contextual Info: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

LTC4098-3.6

Contextual Info: Technische Information / technical information FF600R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

MGY30N60D

Contextual Info: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

TMBAT49FILM

Abstract: MELF dimensions st TMBAT49 MELF DIODE MARKING CODE
Contextual Info: TMBAT49 Small signal Schottky diode Features • very low turn-on voltage ■ fast switching Description The TMBAT49 is a general purpose metal to silicon diode. This device has integrated protection against excessive voltage such as electrostatic discharges.

AN4839

Abstract: DS2107SY DS2107SY40 DS2107SY41 DS2107SY42 DS2107SY43 DS2107SY44 DS2107SY45
Contextual Info: DS2107SY DS2107SY Rectifier Diode Replaces JOctober 2001 version, DS4173-4.0 DS4173-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4500V ■ High Surge Capability IF AV 3329A IFSM APPLICATIONS 52500A ■ Rectification ■ Freewheel Diode

DS2107SY

Abstract: DS2107SY40 DS2107SY41 DS2107SY42 DS2107SY43 DS2107SY44 DS2107SY45
Contextual Info: DS2107SY DS2107SY Rectifier Diode Replaces JOctober 2001 version, DS4173-4.0 DS4173-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4500V ■ High Surge Capability IF AV 3329A IFSM APPLICATIONS 52500A ■ Rectification ■ Freewheel Diode

Contextual Info: PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET plus MOSFET with Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  Typical values unless otherwise specified Integrated Monolithic Schottky Diode V DSS VGS R DS(on) R DS(on) l Low Profile (<0.7 mm)

Contextual Info: PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET plus MOSFET with Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  Typical values unless otherwise specified Integrated Monolithic Schottky Diode V DSS VGS R DS(on) R DS(on) l Low Profile (<0.7 mm)

HFAN-02

Contextual Info: Application Note: HFAN-02.0.2 Rev.1; 04/08 Laser Diode to Single-Mode Fiber Coupling Efficiency: Part 1 - Butt Coupling Maxim Integrated Products Laser Diode to Single-Mode Fiber Coupling Efficiency: Part 1 - Butt Coupling 1 Introduction For fiber-optic transmitters, it is generally desirable

Contextual Info: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGY30N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4

ZENER DIODE POWER RATING

Contextual Info: Division keyword search: part number search: CDLL5916B #12861 RFQ/Sample Package Zener Voltage Regulator Diode Division Datasheet Ireland SA3-35.PDF Mil-Spec (none) Spice Data (none) Shipping TR13\5000cntTR13 Qual Data glassqual.pdf Description This surface mountable 1.5 W Zener diode series in the JEDEC

CMT45N10N3P

Contextual Info: CMT45N10 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced MOSFET is designed to withstand high ! Avalanche Energy Specified energy in avalanche and commutation modes. The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode

marking A7s

Abstract: siemens em 350 99 DIODE marking 351
Contextual Info: SIEMENS Silicon Switching Diode Array BAV 99 Features • For high-speed switching • Connected in series Type Marking Ordering Code tape and reel BAV 99 A7s Q68000-A549 Pin Configuration Package1) SOT-23 3 ¿— EH I IX ° P U 07005 Maximum Ratings per Diode

Contextual Info: L ib 5 3 ^ 3 1 Philips Semiconductors Q O ^bS TQ S IT H APX Preliminary specification VHF variable capacitance diode BB132 N AMER PHILIPS/DISCRETE b'lE 1> QUICK REFERENCE DATA DESCRIPTION The BB132 is a silicon variable capacitance diode in planar technology, with a very high

12N60D1D

Abstract: 12n60d1
Contextual Info: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package Features • 12A,600V JE D E C S T Y LE TO -247 • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description