DIODE 3A 1000V Search Results

GP-30DL

Abstract: 30DL
Contextual Info: ZOWIE Low VF Rectifier Diode GP30DLH THRU GP30MLH Low VF Rectifier Diode VF < 0.90V @IF = 3A FEATURES IFSM = 140Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS

GP-30DL

Abstract: GP30DL GP30ML
Contextual Info: ZOWIE Low VF Rectifier Diode GP30DL THRU GP30ML Low VF Rectifier Diode VF < 0.90V @IF = 3A IFSM = 140Amp FEATURES GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop

Contextual Info: ZOWIE Low VF Rectifier Diode GP30DLH THRU GP30MLH Low VF Rectifier Diode VF < 0.90V @IF = 3A FEATURES IFSM = 140Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop

GF30DL

Abstract: GF30GL GF30JL GF30KL GF30ML
Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DLH THRU GF30MLH VF < 0.91V @IF = 3A FEATURES Halogen-free type Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

GF30D

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DLH THRU GF30MLH VF < 0.91V @IF = 3A FEATURES Halogen-free type Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

GP30DL

Abstract: GP30GL GP30JL GP30KL GP30ML GP-30DL
Contextual Info: ZOWIE Low VF Rectifier Diode GP30DL THRU GP30ML Low VF Rectifier Diode VF < 0.90V @IF = 3A IFSM = 140Amp FEATURES GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop o 3.0 Ampere operation at TA=55 C with no thermal runaway

IC 7805

Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
Contextual Info: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)

APT6M100K

Abstract: MIC4452 3a ultra fast diode
Contextual Info: APT6M100K 1000V, 6A, 2.50Ω MAX N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT6M100K 1000V, 6A, 2.50Ω MAX N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT6M100K

Abstract: MIC4452
Contextual Info: APT6M100K 1000V, 6A, 2.50Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT5F100K

Abstract: MIC4452 1000v5a
Contextual Info: APT5F100K 1000V, 5A 2.8Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

Contextual Info: APT5F100K 1000V, 5A 2.8Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

QM150HY-2H

Abstract: E80276 E1815 qm150hy
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150HY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM150HY-2H • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75

qm150dy-2hk

Abstract: QM150DY-2H Diode B2x E80276
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HK • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75

D027A

Abstract: DIODE 1000a diode 628 1000A diode DTV32-1000A 1000v 3a diode 113 DTV32 MTV32-600A mtv32 switching DIODE 1000A
Contextual Info: DTV32-1000A MTV32-600A / ^ 7 SGS-THOMSON CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER & MODULATION DIODES MAIN PRODUCTS CHARACTERISTICS MTV32 DTV32 If peak 3A 3A Vr r m 600V 1000V trr 50ns 70ns Vf 1.6V 1.6V FEATURES • PRODUCTS SPECIFIC TO HORIZONTAL DE­

2510W

Abstract: RS1M diode
Contextual Info: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10

QM150DY-2HB

Abstract: E80276 QM150DY-2HBK QM150DY-2H QM15
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HBK • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750

AOT3N100

Contextual Info: AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss

Contextual Info: AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss

IXTH6N100D2

Abstract: t6n100 IXTA6N100D2 IXTP6N100D2 T6N10 6N100D2 diode 6A 1000v
Contextual Info: Preliminary Technical Information IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous

IXTH6N100D2

Contextual Info: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous

Contextual Info: Advance Technical Information IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ