DIODE 3A 100V Search Results

diode D32-02

Abstract: DIODE D32 -02 ERD32 diode D32 200V 3A
Contextual Info: ERD32 3A ( 100 to 200V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. Features 30 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability D32 02 Abridged type name Voltage class Applications

diode D32-02

Contextual Info: ERD32 3A ( 100 to 200V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. Features 30 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability D32 02 Abridged type name Voltage class Applications

diode D32-02

Abstract: C3150 D32-02
Contextual Info: ERD32 3A ( 100 to 200V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. Features 30 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability D32 02 Abridged type name Voltage class Applications

diode D32-02

Abstract: D3202 ERD32
Contextual Info: ERD32 3A ( 100 to 200V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. Features 30 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability D32 02 Abridged type name Voltage class Applications

30PDA10

Contextual Info: ｓ DIODE Type : 30PDA10 OUTLINE DRAWING 3A 100V Tj =150 °C FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current

Contextual Info: 拡散型シリコンダイオード 3A 100V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 形 図 30PDA10 拡散型シリコンダイオード,リード線型 構造 Construction Application • 最大定格 Diffusion-type Silicon Rectifier Diode

10 DC-4 diode

Contextual Info: 拡散型シリコンダイオード 3A 100V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 形 図 30PDA10 拡散型シリコンダイオード,リード線型 構造 Construction Application • 最大定格 Diffusion-type Silicon Rectifier Diode

Contextual Info: Advance Technical Information IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: MIC28304 70V 3A Power Module Hyper Speed Control Family General Description Micrel’s MIC28304 is synchronous step-down regulator module, featuring a unique adaptive ON-time control architecture. The module incorporates a DC/DC controller, power MOSFETs, bootstrap diode, bootstrap capacitor

panasonic mp grease

Contextual Info: MIC28304 70V 3A Power Module Hyper Speed Control Family PRELIMINARY General Description Micrel’s MIC28304 is synchronous step-down regulator module, featuring a unique adaptive ON-time control architecture. The module incorporates a DC-to-DC controller, power MOSFETs, bootstrap diode, bootstrap

STTH302S

Abstract: marking u32
Contextual Info: STTH302S HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 200 V Tj (max) 175 °C VF (max) 0.75 V trr (max) 35 ns FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times

IXTJ6N150

Contextual Info: IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

panasonic mp grease

Contextual Info: MIC28303 50V 3A Power Module Hyper Speed Control Family General Description Features Micrel’s MIC28303 is synchronous step-down regulator module, featuring a unique adaptive ON-time control architecture. The module incorporates a DC/DC controller, power MOSFETs, bootstrap diode, bootstrap capacitor

STTH302

Abstract: STTH302RL
Contextual Info: STTH302 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 200 V Tj (max) 175 °C VF (max) 0.75 V trr (max) 35 ns FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times

Contextual Info: î / a v b * - J a ils ' m S u rfa c e Mount Schottky Barrier Diode Sin gle Diode O U TLIN E D IM E N S IO N S D3FJ10 100V 3A >/J\§kSMD >Tjl50°C H S lR = 0.4mA >SRBÜ > D C /D C n y j ï - s > mms t f - h s o a h §5 »&<§. RATINGS •lÊ Î Î I i^ /Ë fê

marking code TY SMD

Abstract: SMD MARKING CODE vk smd diode code TY smd code marking vk SMD MARKING XL jj smd smd schottky diode s3 MARKING SMD xl smd diode marking code JJ smd marking code fj
Contextual Info: Schottky Barrier Diode Single Diode w nnw OUTLINE Package : 2F D3FJ10 U nit I mm Weight 0.16# T yp Feature • • /J v g a s M D • S m all S M D • I r = 0.4mA • L o w lR=0.4m A 3FJ C a th o d e m a r k 100V 3A OÛ y—CO , G)°— 5 M — °(D

byw98

Abstract: DIODE BYW98 200 BYW98200RL byw98200
Contextual Info: BYW98-200 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 200 V Tj (max) 175 °C VF (max) 0.75 V trr (max) 35 ns FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times

Contextual Info: STTH302 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 200 V Tj (max) 175 °C VF (max) 0.75 V trr (max) 35 ns FEATURES AND BENEFITS • ■ ■ ■ Very low conduction losses Negligible switching losses Low forward and reverse recovery times

IXTH3N150

Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on  1500V 3A 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M

byw98

Contextual Info: BYW98-200 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 200 V Tj (max) 175 °C VF (max) 0.75 V trr (max) 35 ns FEATURES AND BENEFITS • ■ ■ ■ Very low conduction losses Negligible switching losses Low forward and reverse recovery times

IXTH3N150

Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH3N150 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH3N150

Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

LTspice

Abstract: Acbel schematic diagram switching power supply NTC 15K LT8582 LT3786 XAL6060-472ML High Current Battery Charger adapter battery hp 19V Sanyo supercapacitors LTC3115-1
Contextual Info: April 2012 I N T H I S I S S U E 2.5MHz, dual monolithic supply with integrated 3A power switches 12 digital power manager sequences any number of supplies 28 dual monolithic ideal diode extends battery life 34 supercapacitor-based power supply backup 36 µModule DC/DC converter

IXTH3N150

Abstract: 3N150 T3N1 Vdss 1500V
Contextual Info: Advance Technical Information IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ