DIODE 3A 1500V Search Results

diode 1500V

Abstract: diode marking H2 mark h2 diode fast recovery diode 1500V diode marking e41 diode 3A 1500V
Contextual Info: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications

diode marking e41

Abstract: E41-15 diode 3A 1500V 1500V 3A diode
Contextual Info: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications

diode marking e41

Abstract: diode 3A 1500V e41.15 ERE41-15 1500V 3A diode
Contextual Info: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications

GT 6 N 170

Abstract: i2t graph TFD312S
Contextual Info: TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series • Features External Dimensions A 0.8±0.2 0.3 16.9± ●Gate trigger current: IGT=10mA max 8.4±0.2 0.2 4.0± ●Average on-state current: IT AV =3A 4.2±0.2 C 0.5 2.8 10.0±0.2 φ 3.3±0.2

Contextual Info: Advance Technical Information IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings

IXTJ6N150

Contextual Info: IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series • Features External Dimensions Unit: mm ●Gate trigger current: IGT=10mA max 13.0 min ●Isolation voltage: VISO=1500V(50Hz AC, RMS, 1min.) ±0.2 4.2 C 0.5 2.8 ±0.2 φ ±0.2 3.3 A 0.2

IR 92 0151

Abstract: DMV1500M DMV1500M7 DMV1500M7F5 DMV1500 diode IR 132 E 25
Contextual Info: DMV1500M7 DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 700 V 1500 V trr (max) 55 ns 135 ns VF (max) 1.55 V 1.65 V 1 2 3 uc 1 d o r 700V Modulation diode Full kit in one package High breakdown voltage capability

IXTH3N150

Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on  1500V 3A 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M

IXTH3N150

Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH3N150 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH3N150

Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH3N150

Abstract: 3N150 T3N1 Vdss 1500V
Contextual Info: Advance Technical Information IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IR 92 0151

Abstract: DMV1500M DMV1500MF5
Contextual Info: DMV1500M DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V trr (max) 50 ns 135 ns VF (max) 1.4 V 1.65 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)

DMV1500H

Abstract: DMV1500HF5
Contextual Info: DMV1500H DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V trr (max) 50 ns 125 ns VF (max) 1.4 V 1.7 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)

IR 92 0151

Abstract: DMV1500L DMV1500LF5
Contextual Info: DMV1500L DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 4A VRRM 600 V 1500 V trr (max) 50 ns 170 ns VF (max) 1.4 V 1.5 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)

IR 92 0151

Abstract: DMV1500M DMV1500MF5 damper
Contextual Info: DMV1500M DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V Trr (max) 50 ns 135 ns VF (max) 1.4 V 1.65 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)

IR 92 0151

Abstract: DMV1500H DMV1500HF5
Contextual Info: DMV1500H DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V Trr (max) 50 ns 125 ns VF (max) 1.4 V 1.7 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)

Contextual Info: NTE2679 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO220F Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D Wide Area of Safe Operation D Built−In Damper Diode Applications: D Horizontal Deflection Output for TV or CRT Monitor

Contextual Info: High Voltage Power MOSFETs VDSS ID25 IXTT6N150 IXTH6N150 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH6N150

Abstract: 6n150
Contextual Info: Advance Technical Information IXTH6N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 6A 3.5Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTT6N150

Contextual Info: IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR

2SD1554

Abstract: 2sd1554 equivalent TOSHIBA DIODE GLASS MOLD 00l3
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1554 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. Unit in mm FEATURES: . High Voltage l&5±0t5 >3.6±aS : VCBO=1500V S.0±0l3 . Low Saturation Voltage: VcE sat =5V(Typ.)(Ic=3A,Ib =0.8A) . High Speed : tf = 1. 0|is(Max.) (I(;p=3A, lBl(end)=0.8A)

2SD869 TOSHIBA

Abstract: 2SD869
Contextual Info: 2SD869 SILICON NPN TRIPLE DIFFUSED MESA TYPE INDUSTRIAL APPLICATIONS Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0Z5.OW.X. FEATURES: 021.OUAX • High Voltage : VCBq =1500V • Low Saturation Voltage : VCE sat =5v (TyP-) +0.09 jZL0— 0.03 (Ic=3A, Ib =0.8A)