3N254-M
Abstract: No abstract text available
Text: 3N254-M SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS DESCRIPTION: The CENTRAL SEMICONDUCTOR 3N254-M series types are silicon single phase, full wave bridge rectifiers designed for general purpose applications. MARKING: FULL PART NUMBER
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3N254-M
254-M
255-M
256-M
257-M
258-M
259-M
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Untitled
Abstract: No abstract text available
Text: 3N247-M SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS DESCRIPTION: The CENTRAL SEMICONDUCTOR 3N247-M series types are silicon single phase, full wave bridge rectifiers designed for general purpose applications. MARKING: FULL PART NUMBER
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3N247-M
247-M
248-M
249-M
250-M
251-M
252-M
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QDN001
Abstract: No abstract text available
Text: Schottky Diode 3CHOTTKY $IODE Termination Network 4ERMINATION .ETWORK QDN001 Series 1$. 3ERIES 3CHOTTKY $IODE • ·4ERMINATION .ETWORK · s 3UITABLE FOR HIGH SPEED MEMORY BUS APPLICATIONS Suitable for high speed memory bus applications s 2O 3 COMPLIANT AND 3N0B TERMINATIONS AVAILABLE
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QDN001
DIODESINTEGRATEDINA13/0PACKAGEFORFASTTURN
HRISTI4EXAS53!
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SCHOTTKY DIODE S6 09
Abstract: No abstract text available
Text: 18 Channel Schottky Diode 3CHOTTKY $IODE Termination Network 4ERMINATION .ETWORK QDN003 Series • #HANNEL 3CHOTTKY $IODE ·4ERMINATION .ETWORK 1$. 3ERIES RoHS compliant and Sn/Pb terminations available s 3UITABLE FOR HIGH SPEED MEMORY BUS APPLICATIONS
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QDN003
DIODESINTEGRATEDINA13/0PACKAGEFORFASTTURN
HRISTI4EXAS53!
SCHOTTKY DIODE S6 09
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DIODE B3N
Abstract: B2n diode 4.7 B2 zener a3 6 zener B2 Zener HZ22-2 zener diode B2 Zener Diode C3 5 B1 5.6 zener GRZZ0002ZB-A
Text: HZ-N Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G1625-0100 Rev.1.00 Mar 25, 2008 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.
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REJ03G1625-0100
DO-35
REJ03G1625-0100
GRZZ0002ZB-A
DIODE B3N
B2n diode
4.7 B2 zener
a3 6 zener
B2 Zener
HZ22-2
zener diode B2
Zener Diode C3 5
B1 5.6 zener
GRZZ0002ZB-A
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68w Transistor smd
Abstract: bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H
Text: Willow Technologies Relay Selector 2002 Signal / Telecommunications Electromechanical HG4100 HG4516 HG4507 HG4078B SGR46G 1C/O 2C/O 1C/O 1C/O Switching Current 1A 2A 2A 5A Switching Voltage 125VAC / 60VDC 125VAC / 150VDC Breaking Capacity 62.5VA / 30W 50VA / 30W
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HG4100
HG4516
HG4507
HG4078B
SGR46G
125VAC
60VDC
150VDC
24VDC
68w Transistor smd
bbc 127 324 DIODE
TRANSISTOR SMD 13W
smd transistor yb
lamp indicator 115vac 400hz
18w smd transistor
RD 6BL
relay 12v 1c/o
kd smd transistor
SGR642H
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e113714
Abstract: LR26716 4N* diode C105P diode a1 7 a1 diode 6-24V 110-240V C108P 1062P
Text: ES SERIES RELAY SOCKETS DESCRIPTION 8,11 and 14 Pin Miniature Sockets, DIN Rail Mountable, Finger Safe ELECTRICAL RATING • 300 Volts, 10 Amps CONSTRUCTION Contacts • Brass, Nickel Plated Screws • M3 Steel, Nickel Plated, Maximum Wire Gauge #14 Molding • Break Resistant Thermoplastic
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E113714
LR26716
ES15/2N
ES15/3N
ES15/4N
C-103-P
ES15/2N
ES15/4N
e113714
LR26716
4N* diode
C105P
diode a1 7
a1 diode
6-24V
110-240V
C108P
1062P
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PS331
Abstract: PS331S Data sheet of thermistor 10K ohms ntc Microcrystal MX1V-TL-32.768K 2N7002-SOT23 SOT23-GSD SOT23GSD cmr200tb MFR resistor MX1V-TL
Text: PS3100 Multi-chemistry Smart Battery Manager Module Features • • • Can be programmed with application specific cell parameters for NiMH and Li Ion chemistries • Fully compliant with industry standard Smart Battery Data Specification V1.1a SMBus V1.1 with PEC / CRC-8
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PS3100
14-bit
PS331
PS331S
Data sheet of thermistor 10K ohms ntc
Microcrystal MX1V-TL-32.768K
2N7002-SOT23
SOT23-GSD
SOT23GSD
cmr200tb
MFR resistor
MX1V-TL
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k50t6
Abstract: k50t60 K50T
Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKW50N60T
k50t6
k50t60
K50T
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k50t60
Abstract: IKW50N60T k50t60 pdf datasheet k50t6 Datasheet k50t60 K50T k50t60 2 B PG-TO-247-3-21 *k50t60 IKW50N60
Text: TrenchStop Series IKW50N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKW50N60T
k50t60
IKW50N60T
k50t60 pdf datasheet
k50t6
Datasheet k50t60
K50T
k50t60 2 B
PG-TO-247-3-21
*k50t60
IKW50N60
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k50t60
Abstract: K50t60 igbt
Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKW50N60T
k50t60
K50t60 igbt
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200nC
Abstract: G50T60 IGB50N60T
Text: IGB50N60T p TrenchStop Series Low Loss IGBT in TrenchStop® technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for frequency inverters for washing machines, fans,
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IGB50N60T
G50T60substances.
200nC
G50T60
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G50T60
Abstract: G50T60 igbt IGW50N60T IGP50N60T IKW50N60T PG-TO-220-3-1 PG-TO-247-3-21 IC 3140
Text: IGP50N60T IGW50N60T TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for :
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IGP50N60T
IGW50N60T
PG-TO-220-3-1
G50T60
G50T60 igbt
IGW50N60T
IGP50N60T
IKW50N60T
PG-TO-220-3-1
PG-TO-247-3-21
IC 3140
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G50T60
Abstract: No abstract text available
Text: IGP50N60T IGW50N60T TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for :
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IGP50N60T
IGW50N60T
PG-TO-220-3-1
G50T60
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G50T60
Abstract: IGB50N60T IKW50N60T
Text: TrenchStop Series IGB50N60T p Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters
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IGB50N60T
G50T60
IGB50N60T
IKW50N60T
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Untitled
Abstract: No abstract text available
Text: IGP50N60T IGW50N60T TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for :
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IGP50N60T
IGW50N60T
PG-TO-220-3-1
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YL 69 moisture
Abstract: 57M-SS ITW Pancon 57-112R 76-95 round bezel ITW Switches ITW Pancon CE100F AMP PBTP pushbutton square dpdt 8mm
Text: TABLE OF CONTENTS SEALED IP67 PUSHBUTTON SWITCHES Table Of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii – iii Series 034: Sub-Miniature T-05 Space Saver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 – 3
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Untitled
Abstract: No abstract text available
Text: PD-2.460 International ^R ectifier HFA70NK60C Ultrafast, Soft Recovëry Diode HEXFRED" BASE COMM 3N CATHODE Features VR = 600V c5 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V Qrr * = 520nC 2 ¡3
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HFA70NK60C
520nC
80A/ps
Liguria49
4ASS452
002na0
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Untitled
Abstract: No abstract text available
Text: 1SV230 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE 1 <;\/7 SILICON EPITAXIAL PLANAR TYPE 3n Unit in mm CATV CONVERTER 1st OSC TUNING. • • • High Capacitance Ratio : C 2 y / C 2 0 V ~ Typ. Low Series Resistance : r$ = 0.73n (Typ.) Useful for Small Size Tuner.
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1SV230
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MDA202
Abstract: DIODE 3N SERIES IC a210 da210 MDA200
Text: 3N253 thru 3N259 MOTOROLA MDA200 series M INIATURE INTEGRAL DIODE ASSEMBLIES . . . w ith silico n re c tifie r ch ip s in te rc o n n e c te d and e n ca p su la te d in to SINGLEPHASE FULL-WAVE BRIDGE v o id le ss re c tifie r bridge c irc u its . U L R eco g n ized
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3N253
3N259
MDA200
MDA202
DIODE 3N SERIES
IC a210
da210
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Untitled
Abstract: No abstract text available
Text: S EM IC O N D U C T O R KDP600UL TECHNI CAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna sw itches in m obile applications. FEA TU R ES A . hfi 4 U U!U 1 1 . • Array type 4 Diode in one package • Low Capacitance _ • Low Series resistance O n nin n
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KDP600UL
100MHz
200pF,
100nA
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74ACQ657
Abstract: 74ACQ657SPC 74ACTQ657 74ACTQ657SC 74ACTQ657SPC M24B MS-013 N24C
Text: Revised D ecem ber 1998 E M IC O N D U C T G R T M 74ACQ657 • 74ACTQ657 Quiet Series Octal Bidirectional Transceiver with 8-Bit Parity Generator/Checker and 3-STATE Outputs General Description Features T h e AC Q /AC TQ 657 contains eight non-inverting buffers
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74ACQ657
74ACTQ657
ACQ/ACTQ657
74ACQ657
74ACQ657SPC
74ACTQ657
74ACTQ657SC
74ACTQ657SPC
M24B
MS-013
N24C
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Untitled
Abstract: No abstract text available
Text: VX-HS/U—X. /17-M O SFET V X -n SERIES POWER MOSFET hM N O U T L IN E D IM E N S IO N S 2SK2183 F5V50VX2 • R A TIN G S ■ Absolute Maximum Ratings m Item (T c = 2 5 °C ) sS # Symbol a Storage Temperature * Channel Temperature KU-f > • v - x ü j ±
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/17-M
2SK2183
F5V50VX2)
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Untitled
Abstract: No abstract text available
Text: H V X - ï ï v U —X /t 9 - M O S F E T H V X -H SERIES POWER MOSFET N -^ -V * ;U . • W fé \f-îiB I O U T L IN E D IM E N S IO N S 2SK2669 F5V 90H V X 2 ■ Æ ÎS * R A TIN G S ■ A b s o lu te Maxim um R a tin g s m Item (T c = 2 5 °C ) 3k ft Conditions
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2SK2669
10/is.
10/is,
F5V90HVX2)
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