DIODE 3N SERIES Search Results

Contextual Info: PD-2.460 International ^R ectifier HFA70NK60C Ultrafast, Soft Recovëry Diode HEXFRED" BASE COMM 3N CATHODE Features VR = 600V c5 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V Qrr * = 520nC 2 ¡3

Contextual Info: 1SV230 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE 1 <;\/7 SILICON EPITAXIAL PLANAR TYPE 3n Unit in mm CATV CONVERTER 1st OSC TUNING. • • • High Capacitance Ratio : C 2 y / C 2 0 V ~ Typ. Low Series Resistance : r$ = 0.73n (Typ.) Useful for Small Size Tuner.

3N254-M

Contextual Info: 3N254-M SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS DESCRIPTION: The CENTRAL SEMICONDUCTOR 3N254-M series types are silicon single phase, full wave bridge rectifiers designed for general purpose applications. MARKING: FULL PART NUMBER

Contextual Info: 3N247-M SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS DESCRIPTION: The CENTRAL SEMICONDUCTOR 3N247-M series types are silicon single phase, full wave bridge rectifiers designed for general purpose applications. MARKING: FULL PART NUMBER

MDA202

Abstract: DIODE 3N SERIES IC a210 da210 MDA200
Contextual Info: 3N253 thru 3N259 MOTOROLA MDA200 series M INIATURE INTEGRAL DIODE ASSEMBLIES . . . w ith silico n re c tifie r ch ip s in te rc o n n e c te d and e n ca p su la te d in to SINGLEPHASE FULL-WAVE BRIDGE v o id le ss re c tifie r bridge c irc u its . U L R eco g n ized

QDN001

Contextual Info: Schottky Diode 3CHOTTKY$IODE Termination Network 4ERMINATION.ETWORK QDN001 Series 1$.3ERIES 3CHOTTKY$IODE • ·4ERMINATION.ETWORK · s3UITABLEFORHIGHSPEEDMEMORYBUSAPPLICATIONS Suitable for high speed memory bus applications s2O 3COMPLIANTAND3N0BTERMINATIONSAVAILABLE

SCHOTTKY DIODE S6 09

Contextual Info: 18 Channel Schottky Diode 3CHOTTKY$IODE Termination Network 4ERMINATION.ETWORK QDN003 Series •#HANNEL3CHOTTKY$IODE ·4ERMINATION.ETWORK 1$.3ERIES RoHS compliant and Sn/Pb terminations available s3UITABLEFORHIGHSPEEDMEMORYBUSAPPLICATIONS

DIODE B3N

Abstract: B2n diode 4.7 B2 zener a3 6 zener B2 Zener HZ22-2 zener diode B2 Zener Diode C3 5 B1 5.6 zener GRZZ0002ZB-A
Contextual Info: HZ-N Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G1625-0100 Rev.1.00 Mar 25, 2008 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.

68w Transistor smd

Abstract: bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H
Contextual Info: Willow Technologies Relay Selector 2002 Signal / Telecommunications Electromechanical HG4100 HG4516 HG4507 HG4078B SGR46G 1C/O 2C/O 1C/O 1C/O Switching Current 1A 2A 2A 5A Switching Voltage 125VAC / 60VDC 125VAC / 150VDC Breaking Capacity 62.5VA / 30W 50VA / 30W

Contextual Info: S EM IC O N D U C T O R KDP600UL TECHNI CAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna sw itches in m obile applications. FEA TU R ES A . hfi 4 U U!U 1 1 . • Array type 4 Diode in one package • Low Capacitance _ • Low Series resistance O n nin n

e113714

Abstract: LR26716 4N* diode C105P diode a1 7 a1 diode 6-24V 110-240V C108P 1062P
Contextual Info: ES SERIES RELAY SOCKETS DESCRIPTION 8,11 and 14 Pin Miniature Sockets, DIN Rail Mountable, Finger Safe ELECTRICAL RATING • 300 Volts, 10 Amps CONSTRUCTION Contacts • Brass, Nickel Plated Screws • M3 Steel, Nickel Plated, Maximum Wire Gauge #14 Molding • Break Resistant Thermoplastic

74ACQ657

Abstract: 74ACQ657SPC 74ACTQ657 74ACTQ657SC 74ACTQ657SPC M24B MS-013 N24C
Contextual Info: Revised D ecem ber 1998 E M IC O N D U C T G R T M 74ACQ657 • 74ACTQ657 Quiet Series Octal Bidirectional Transceiver with 8-Bit Parity Generator/Checker and 3-STATE Outputs General Description Features T h e AC Q /AC TQ 657 contains eight non-inverting buffers

PS331

Abstract: PS331S Data sheet of thermistor 10K ohms ntc Microcrystal MX1V-TL-32.768K 2N7002-SOT23 SOT23-GSD SOT23GSD cmr200tb MFR resistor MX1V-TL
Contextual Info: PS3100 Multi-chemistry Smart Battery Manager Module Features • • • Can be programmed with application specific cell parameters for NiMH and Li Ion chemistries • Fully compliant with industry standard Smart Battery Data Specification V1.1a SMBus V1.1 with PEC / CRC-8

k50t6

Abstract: k50t60 K50T
Contextual Info: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode •            C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

k50t60

Abstract: K50t60 igbt
Contextual Info: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

200nC

Abstract: G50T60 IGB50N60T
Contextual Info: IGB50N60T p TrenchStop Series Low Loss IGBT in TrenchStop® technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for frequency inverters for washing machines, fans,

G50T60

Abstract: G50T60 igbt IGW50N60T IGP50N60T IKW50N60T PG-TO-220-3-1 PG-TO-247-3-21 IC 3140
Contextual Info: IGP50N60T IGW50N60T TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for :

G50T60

Contextual Info: IGP50N60T IGW50N60T TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for :

Contextual Info: TrenchStop Series IGB50N60T p Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters

G50T60

Abstract: IGB50N60T IKW50N60T
Contextual Info: TrenchStop Series IGB50N60T p Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters

Contextual Info: IGP50N60T IGW50N60T TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for :

Contextual Info: VX-HS/U—X. /17-M O SFET V X -n SERIES POWER MOSFET hM N O U T L IN E D IM E N S IO N S 2SK2183 F5V50VX2 • R A TIN G S ■ Absolute Maximum Ratings m Item (T c = 2 5 °C ) sS # Symbol a Storage Temperature * Channel Temperature KU-f > • v - x ü j ±

Contextual Info: H V X - ï ï v U —X /t 9 - M O S F E T H V X -H SERIES POWER MOSFET N -^ -V * ;U . • W fé \f-îiB I O U T L IN E D IM E N S IO N S 2SK2669 F5V 90H V X 2 ■ Æ ÎS * R A TIN G S ■ A b s o lu te Maxim um R a tin g s m Item (T c = 2 5 °C ) 3k ft Conditions

YL 69 moisture

Abstract: 57M-SS ITW Pancon 57-112R 76-95 round bezel ITW Switches ITW Pancon CE100F AMP PBTP pushbutton square dpdt 8mm
Contextual Info: TABLE OF CONTENTS SEALED IP67 PUSHBUTTON SWITCHES Table Of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii – iii Series 034: Sub-Miniature T-05 Space Saver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 – 3