DIODE 40 S02 Search Results

CLS02

Contextual Info: CLS02 TOSHIBA Schottky Barrier Diode CLS02 Switching-Mode Power Supply Secondary-Rectification Applications (Low Voltage) DC/DC Converter Applications Unit: mm 4 ± 0.2 ② Average forward current: IF (AV) = 10 A • Repetitive peak reverse voltage: VRRM = 40 V

CLS02

Contextual Info: CLS02 TOSHIBA Schottky Barrier Diode CLS02 Switching-Mode Power Supply Secondary-Rectification Applications (Low Voltage) DC/DC Converter Applications Unit: mm 4 ± 0.2 ② Repetitive peak reverse voltage: VRRM = 40 V Suitable for compact assembly due to small surface-mount package:

CLS02

Contextual Info: CLS02 TOSHIBA Schottky Barrier Diode CLS02 Switching-Mode Power Supply Secondary-Rectification Applications (Low Voltage) Unit: mm DC/DC Converter Applications ② • Forward voltage: VFM = 0.55 V (max) • Average forward current: IF (AV) = 10 A • Repetitive peak reverse voltage: VRRM = 40 V

Contextual Info: CLS02 TOSHIBA Schottky Barrier Diode CLS02 Switching-Mode Power Supply Secondary-Rectification Applications (Low Voltage) DC/DC Converter Applications Unit: mm 4 ±0.2 ② 1.5±0.1 • Repetitive peak reverse voltage: VRRM = 40 V • Suitable for compact assembly due to small surface-mount package:

s02 code marking toshiba

Contextual Info: CLS02 TOSHIBA Schottky Barrier Diode CLS02 Switching-Mode Power Supply Secondary-Rectification Applications (Low Voltage) Unit: mm DC/DC Converter Applications ② • Forward voltage: VFM = 0.55 V (max) • Average forward current: IF (AV) = 10 A • Repetitive peak reverse voltage: VRRM = 40 V

Contextual Info: CLS02 TOSHIBA Schottky Barrier Diode CLS02 Switching-Mode Power Supply Secondary-Rectification Applications (Low Voltage) DC/DC Converter Applications Unit: mm 4 ±0.2 ② 1.5±0.1 • Repetitive peak reverse voltage: VRRM = 40 V • Suitable for compact assembly due to small surface-mount package:

CD40468

Abstract: CD4046BCN cd4046bc L50115 CD4046B resistor arry CD4046BM c04046 FM MODULATOR CD4046B Zener diode 0740
Contextual Info: November 1995 Semiconductor C D 40 46 B M /C D 4 04 6B C M icro p o w er P h ase-Locked Loop General Description The CD4046B micropower phase-locked loop PLL con­ sists of a low power, linear, voltage-controlled oscillator (VCO), a source follower, a zener diode, and two phase

SS125

Abstract: ss125 transistor ss125 datasheet BSS125 Q67000-S233 S233 marking Q62702-S021 Q67000-S008 marking "BSs"
Contextual Info: BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.5 .2.5 V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 125 600 V 0.1 A 45 Ω TO-92 SS125 Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021

Contextual Info: SLD433S4 60W Array Laser Diode Preliminary Description The SLD433S4 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S027 Features • High power

s027

Abstract: C6802 SS-00259 high power laser IEC60825-1 SLD433S4
Contextual Info: SLD433S4 60W Array Laser Diode Description The SLD433S4 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S027 Features • High power

ss125 transistor

Abstract: ss125
Contextual Info: SIEMENS BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode •^GS th = 1-5 -2 .5 V Type b 0.1 A BSS 125 ^DS 600 V Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 ffDS(on) Package Marking 45 Q TO-92

e05125

Abstract: C6802 IEC60825-1 SLD433S4 SS-00259 water conductivity circuit
Contextual Info: SLD433S41 60W Array Laser Diode Description The SLD433S41 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S027 Features • High power

Contextual Info: SIEMENS BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode ^GS th = 1-5 .2.5 V Type ^DS BSS 125 600 V Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 0.1 A ffDS(on) Package Marking 45 £1 TO-92 SS125

S3 DIODE schottky

Contextual Info: Philips Semiconductors Objective specification 6 N-channel 30 mfi FET/Schottky barrier diode array_ FEATURES PHN603S PINNING-SOT137-1 S024 • 30 mQ on-state resistance • On board Schottky diodes for back-emf clamping. APPLICATIONS • Driving high performance three phase brushless

Contextual Info: A dvanced P ow er Te c h n o lo g y O D APT5020BN 500V 28.0A 0.200 O S APT5022BN 500V 27.0A 0.22£i G F vvE r m o s í ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S All Ratings: Tc = 25°C unless otherwise specified. APT S020BN

LM 2940 OCT

Abstract: melcher S-1000 DIN 41612 H15 male Melcher CM-1000 Melcher bM 2000 LK 1301-7R melcher bM 1000 melcher LM 1000 TDC 310 NTC Melcher AM 1000
Contextual Info: DC-DC Converters <100 W 7 DC-DC Converters <100 W 7.1 Rugged Environment Output [W] 10 20 40 60 80 100 7.2 3 Output [V DC] 5 12 15 24 36 48 Input [V DC] 10 30 70 140 220 380 Product Family Case Page M M02 7-2 S S02 7 - 26 Input [V DC] 10 30 70 140 220 380

4b dmz ptc

Abstract: melcher bM 3040 H1501 H1000 melcher ac-dc converter melcher LM 1000 Melcher dc-dc converter bm 1000 1206 FUSE marking UD 1301-7R MELCHER THE POWER PARTNERS Melcher LK 2660-7R
Contextual Info: DC-DC Converters <100 W 7 DC-DC Converters <100 W 7.1 Rugged Environment Output [W] 10 20 40 60 80 100 7.2 3 Output [V DC] 5 12 15 24 36 48 Input [V DC] 10 30 70 140 220 380 Product Family Case Page M M02 7-2 S S02 7 - 26 Input [V DC] 10 30 70 140 220 380

diode F 82 bp

Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
Contextual Info: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip

Melcher M 1000 AC-DC/DC-DC CONVERTER

Abstract: LM 2000 melcher Melcher Melcher LK 2000 melcher LM 1000 Melcher family lm 1601 H1000 melcher H254 melcher 1000 Melcher family K
Contextual Info: AC-DC Converters <100 W 10 AC-DC Converters <100 W 10.1 Rugged Environment Output [W] 10 20 40 60 80 100 3 Output [V DC] 5 12 15 24 36 48 Input [V AC] 85 110 135 170 220 265 Product Family Case Page M M02 10 - 2 S S02 10 - 23 VSR various 10 - 46 Product Family

lm 383 ic

Abstract: 1001-7R 1301-7R B3P5 TOKO AC-DC Converters NTC 50-11 resistance marking 5024B NTC 50-11 melcher LM 1000 melcher LM 1601
Contextual Info: AC-DC Converters <100 W 10 AC-DC Converters <100 W 10.1 Rugged Environment Output [W] 10 20 40 60 80 100 3 Output [V DC] 5 12 15 24 36 48 Input [V AC] 85 110 135 170 220 265 Product Family Case Page M M02 10 - 2 S S02 10 - 23 VSR various 10 - 46 Product Family

2n2224

Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272

D75GA

Abstract: semibox SKM 75 GAL 123 IGBT Semitrans M SKD 100 GAL semikron SKD 75 gal SKD75GAL
Contextual Info: sem ik r d n Absolute Maximum Ratings Symbol V cES R g e = 20 k ii V cG R lc Tease ” 25/80 O Tease = 25/80 °C; tp = 1 ms I CM V ges Ptot per IGBT/D1/D8, T „ » = 2 5 °C Tj, Tag Vjsol humidity climate AC, 1 min. DIN 40 040 DIN IEC 68T.1 Diodes 91 If

CCS020M12CM2

Abstract: CPWR-AN13
Contextual Info: CCS020M12CM2 1.2kV, 80 mΩ Silicon Carbide Six-Pack Three Phase Module C2M MOSFET and Z-Rec Diode 1.2 kV RDS(on) 80 mΩ Esw, Total @ 20A, 150 ˚C Features • • • • • • • VDS 0.48 mJ Package Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode

E78996

Abstract: tig ac inverter circuit IR E78996 tig welding E78996 datasheet bridge tig welding machine irf e78996 GA100TS60SQ tig welding half bridge
Contextual Info: Bulletin I27119 rev. B 06/02 GA100TS60SQ "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • • VCES = 600V Generation 4 Standard Speed IGBT Technology QuietIR Antiparallel diodes with Fast Soft recovery Very Low Conduction Losses