DIODE 400V 1.5A Search Results

ERC04

Abstract: DIODE 40 C04
Contextual Info: ERC04 F (1.5A) (200V to 400V / 1.5A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø 4.0 ø 1.0 7.5 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Color code : Orange C04 Abridged type name Applications Absolute maximum ratings

rectifier diode for max 1.5A

Contextual Info: ERC04 F (1.5A) (200V to 400V / 1.5A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø 4.0 ø 1.0 7.5 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Color code : Orange C04 Abridged type name Applications 02 Voltage class

D31-04

Abstract: ERD31 Diode 400V 5A Diode 400V 1.5A
Contextual Info: ERD31 1.5A ( 400V / 1.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. Marking Features Large current High voltage by mesa design Color code : Green Voltage class Applications Lot No. High speed switching 種 機 Maximum ratings and characteristics

DIODE C04 06

Contextual Info: ERC04 F (1.5A) (200V to 400V / 1.5A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø 4.0 ø 1.0 7.5 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Color code : Orange C04 Abridged type name Applications •·· 81 Lot No.

Diode 400V 1.5A

Abstract: DIODE 40 C04 marking 1.5a RECTIFIER DIODE C04 06 c04 06 08 diode DIODE erc04
Contextual Info: ERC04 F (1.5A) (200V to 400V / 1.5A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø 4.0 ø 1.0 7.5 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Color code : Orange C04 Abridged type name Applications •·· 81 Lot No.

D2L40

Contextual Info: n - n x V 'C X - Y - Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS D2L40 400V 1.5A • t r r 50ns m •S R S ÍÜ • 7 5 -rjn - f- ju •^ B s O A .P ,^ • i l i S s FA RATINGS Absolute Maximum Ratings is » fre iré a a i s E - fSymbol Conditions

D2L DIODE

Abstract: diode marking code I5 sa marking axial diode diode d2l
Contextual Info: Super Fast Recovery Diode Axial Diode Wtm D2L40 OUTLINE U n it-m m Package : AX078 W e ig h t 0 .3 8 g T y p 400V 1.5A Q 27.5 Feature 27.5 I04.O • Low Noise • i& S 't 'X • trr=50ns -\4- fl> • trr=50ns Main Use * f Ä P f f iE » M arking • Sw itching Regulator

1r5gu

Abstract: ULTRA FAST diode 400v 5a 1r5gu diode
Contextual Info: SILICON DIFFUSED TYPE ULTRA FAST RECOVERY DIODE O SW ITC H IN G TYPE POW ER SUPPLY APPLICATIONS. U n it in m m • Repetitive Peak Reverse Voltage Vr R M =400V • Average Forward C urrent !F AV =1.5A (T a = 25°C) • Very F ast Reverse Recovery Time trr = 100ns (MAX.)

smd code book z1

Contextual Info: Super Fast Recovery Diode mtm OUTLINE Single D iode M1FL40 400V 1.5A ;fr y - F y - ? Cathode m ar Feature • /JvPSMD Unit-mm Weight 0.027g Typ Package : M1F • Small SMD • fîy -fX ' • Low Noise • trr=50ns • trr=50ns [| a 03 1 x U -yb^d^(M )

D1F40

Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Contextual Info: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A

diac 400V 10A

Contextual Info: VK05CFL  ELECTRONIC DRIVER FOR CFL APPLICATION TYPE VK05CFL BV 520 V ICrms 0.25A IPeak 1.5A EMITTER SWITCH POWER OUTPUT STAGE INTEGRATED ANTIPARALLEL COLLECTOR SOURCE DIODE • INTEGRATED DIAC FUNCTION ■ NOMINAL WORKING FREQUENCY SETTABLE BY EXTERNAL CAPACITOR

pin diagram of diac

Abstract: 23w cfl circuit diac 400V 15w cfl diac 30v diac mosfet schematic diagram Electronic Ballast block diagram of diac function of diac cfl lamp 15w
Contextual Info: VK05CFL ELECTRONIC DRIVER FOR CFL APPLICATION TYPE VK05CFL BV 520 V ICrms 0.25A IPeak 1.5A EMITTER SWITCH POWER OUTPUT STAGE INTEGRATED ANTIPARALLEL COLLECTOR SOURCE DIODE • INTEGRATED DIAC FUNCTION ■ NOMINAL WORKING FREQUENCY SETTABLE BY EXTERNAL CAPACITOR

diac 30v

Abstract: diac 400V 15w cfl pin diagram of diac DIAC in cfl diac BIPOLAR cfl lamp 15w 23w cfl circuit 400v diac DIAC EQUIVALENT circuit
Contextual Info: VK05CFL  ELECTRONIC DRIVER FOR CFL APPLICATION TYPE VK05CFL BV 520 V ICrms 0.25A IPeak 1.5A EMITTER SWITCH POWER OUTPUT STAGE INTEGRATED ANTIPARALLEL COLLECTOR SOURCE DIODE • INTEGRATED DIAC FUNCTION ■ NOMINAL WORKING FREQUENCY SETTABLE BY EXTERNAL CAPACITOR

5w R12K

Abstract: diac 30v diac 400V 23w cfl circuit 15w cfl diac BIPOLAR DIAC DATASHEET 220v DIAC EQUIVALENT circuit 1N4007 VK05CFL
Contextual Info: VK05CFL ELECTRONIC DRIVER FOR CFL APPLICATION TYPE VK05CFL BV 520 V ICrms 0.25A IPeak 1.5A EMITTER SWITCH POWER OUTPUT STAGE INTEGRATED ANTIPARALLEL COLLECTOR SOURCE DIODE • INTEGRATED DIAC FUNCTION ■ NOMINAL WORKING FREQUENCY SETTABLE BY EXTERNAL CAPACITOR

23w cfl circuit

Abstract: cfl Self-Oscillating schematic diagram of cfl 5w lamps DIAC application pin diagram of diac 15w ELECTRONIC BALLAST circuit diagram cfl lamp 15w DIAC 220v DIAC in cfl diac 400V
Contextual Info: VK05CFL ELECTRONIC DRIVER FOR CFL APPLICATION TYPE VK05CFL BV 520 V ICrms 0.25A IPeak 1.5A EMITTER SWITCH POWER OUTPUT STAGE INTEGRATED ANTIPARALLEL COLLECTOR SOURCE DIODE • INTEGRATED DIAC FUNCTION ■ NOMINAL WORKING FREQUENCY SETTABLE BY EXTERNAL CAPACITOR

diac BIPOLAR

Abstract: schematic diagram of cfl 5w lamps diac 400V DIAC 250v 23w cfl circuit
Contextual Info: VK05CFL ELECTRONIC DRIVER FOR CFL APPLICATION TYPE VK05CFL BV 520 V ICrms 0.25A IPeak 1.5A s ct EMITTER SWITCH POWER OUTPUT STAGE INTEGRATED ANTIPARALLEL COLLECTOR SOURCE DIODE • INTEGRATED DIAC FUNCTION ■ NOMINAL WORKING FREQUENCY SETTABLE BY EXTERNAL CAPACITOR

PG06J

Abstract: diode rgp10g rgp10j diode RGP30J DIODE DIODE 10a 800v bridge diode 60a general instrument uf4006 RGP15J diode diode 1000V 10a FEP30JT
Contextual Info: C£X>G e n e r a l v S e m ic o n d u c t o r END-USEAPPLICATIONS '¿•it V BH I END-USE INPUT BRIDGE (A) O U TPUT/ SNUBBER Output DF08M W08G KBP08M GBU4K GBU6K GBU8K RGP10J RGP15J RGP30J FEP6JT FEP16JT FEP30JT 40V RGP10K RGP15K RGP30K 1.0A 1.5A 3.0A 5.0A

irf830a

Contextual Info: IRF830A A dvanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance cn ^DS on = ♦ Rugged Gate Oxide Technology 500 V 1.5a A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

rectifier diode for max 250v 1.5A

Abstract: IRFF420 JANTX2N6794 JANTXV2N6794 rectifier 15A, 500V rectifier diode 250V 1.5A
Contextual Info: PD - 90429D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number IRFF420 BVDSS 500V RDS(on) 3.0Ω ID 1.5A ® The HEXFET technology is the key to International

Contextual Info: PD - 90429D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number IRFF420 BVDSS 500V RDS(on) 3.0Ω ID 1.5A ® The HEXFET technology is the key to International

FDD5N50UTM

Abstract: FDD5N50U FDD5N50UTF
Contextual Info: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

rectifier diode 250V 1.5A

Abstract: IRFF420 JANTX2N6794 JANTXV2N6794 rectifier diode for max 250v 1.5A
Contextual Info: PD - 90429C IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF420 BVDSS 500V RDS(on) 3.0Ω ID 1.5A  The HEXFET technology is the key to International

Contextual Info: TM UniFET-II FDP3N50NZ / FDPF3N50NZ tm N-Channel MOSFET 500V, 3A, 2.5 Features Description • RDS on = 2.1 (Typ.)@ VGS = 10V, ID = 1.5A • Low Gate Charge (Typ. 6.2nC) These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe,