DIODE 400V 20A Search Results

PVD150-12

Abstract: dc 3phase ac inverter circuit 15KW 15KW igbt 200 A 1200 V thyristor 15KW thyristor inverter
Contextual Info: TENTATIVE PIM MODULE PVD150PVD150-12 15KW 400V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 15kw 400V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage

11kw

Abstract: dc 3phase ac inverter circuit PVD110-12 thyristor inverter igbt 500V 50A bridge thyristor snubber resistance of IGBT PVD11 inverter circuit dc to ac 5V to 1000V igbt 500V 1A
Contextual Info: TENTATIVE PIM MODULE PVD110PVD110-12 11KW 400V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 11kw 400V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage

inverter circuit dc to ac 5V to 1000V

Abstract: PVD75PVD75-12 bridge thyristor PVD75-12 IGBT 500V 50A IGBT snubber igbt 500V 1A
Contextual Info: TENTATIVE PIM MODULE PVD75PVD75-12 7.5KW 400V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 7.5kw 400V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage

dc 3phase ac inverter circuit

Abstract: thyristor inverter PVD55-12 5.5KW igbt 500V 1A Gate Turn-off Thyristor 600V 20A
Contextual Info: TENTATIVE PIM MODULE PVD55 PVD55-12 5.5KW 400V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 5.5kw 400V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage

RD2004

Abstract: RD2004JS-SB ENA1895 TC-00002483 A1895
Contextual Info: RD2004JS-SB Ordering number : ENA1895 SANYO Semiconductors DATA SHEET RD2004JS-SB Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • VF=1.5V max. IF=20A VRRM=400V trr=20ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

S11V

Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Contextual Info: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s

RD2004

Abstract: A1486 RD2004JN
Contextual Info: RD2004JN Ordering number : ENA1486 SANYO Semiconductors DATA SHEET RD2004JN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. Fast forward / reverse recovery time.

vrrm 400v if 20A ultra fast recovery diode

Abstract: 10D2A U20GL2C48A 20GL2C
Contextual Info: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 400V Average Output Rectified Current : IO = 20A

TOSHIBA RECTIFIER

Contextual Info: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION : VRRM = 400V Average Output Rectified Current : IO = 20A Ultra Fast Reverse−Recovery Time

Contextual Info: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 400V l Average Output Rectified Current : IO = 20A

rd2004

Abstract: RD2004LS
Contextual Info: RD2004LS Ordering number : ENA0968 SANYO Semiconductors DATA SHEET RD2004LS Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • High breakdown voltage VRRM=400V . High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.

A1270

Abstract: transistor A1270 RD2004 A1270 transistor datasheet RD2004LN A-1270 a1270* transistor
Contextual Info: RD2004LN Ordering number : ENA1270A SANYO Semiconductors DATA SHEET RD2004LN Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.

transistor A1270

Abstract: A1270 A1270 transistor datasheet RD2004LN RD2004 a1270* transistor
Contextual Info: RD2004LN Ordering number : ENA1270 SANYO Semiconductors DATA SHEET RD2004LN Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • High breakdown voltage VRRM=400V . High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.

20gl2c

Abstract: TOSHIBA DIODE DATABOOK 400v 20A ultra fast recovery diode vrrm 400v if 20A ultra fast recovery diode U20GL2C48A
Contextual Info: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 400V Average Output Rectified Current : IO = 20A Ultra Fast Reverse−Recovery Time

20DL2C41A

Abstract: 20DL2CZ41A DIODE 20FL2C 20DL2C 20FL2C 20FL2C41A 20FL2CZ41A 20GL2C41A 20GL2CZ41A 20GL2C
Contextual Info: 20DL2C41A,20FL2C41A,20GL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2C41A,20FL2C41A,20GL2C41A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 200, 300, 400V

5DL2CZ

Abstract: 5DL2CZ transistor 5dl2cz transistors 5GL2CZ47A 5DL2CZ47A 5fl2cz 5FL2CZ47A vrrm 400v if 20A ultra fast recovery diode 12-10C1A
Contextual Info: 5DL2CZ47A,5FL2CZ47A,5GL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2CZ47A,5FL2CZ47A,5GL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 200, 300, 400V

20GL2C

Contextual Info: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 400V z Average Output Rectified Current : IO = 20A z Ultra Fast Reverse−Recovery Time

Contextual Info: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm Repetitive Peak Reverse Voltage : VRRM = 400V Average Output Rectified Current : IO = 20A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max) 3±0.2 SWITCHING MODE POWER SUPPLY APPLICATION

Contextual Info: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A Unit: mm Average Output Rectified Current : VRRM = 400V : IO = 20A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max) Repetitive Peak Reverse Voltage 3±0.2 SWITCHING MODE POWER SUPPLY APPLICATION

Contextual Info: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 400V z Average Output Rectified Current : IO = 20A z Ultra Fast Reverse−Recovery Time

10dl2cz

Abstract: 10FL2CZ 10gl2cz vrrm 400v if 20A ultra fast recovery diode
Contextual Info: 10DL2CZ47A,10FL2CZ47A,10GL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2CZ47A,10FL2CZ47A,10GL2CZ47A Unit in mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM=200, 300, 400V

10DL2CZ47A

Abstract: 10dl2cz 10GL2CZ 10FL2CZ 10FL2CZ47A vrrm 400v if 20A ultra fast recovery diode 10GL2CZ47A
Contextual Info: 10DL2CZ47A,10FL2CZ47A,10GL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2CZ47A,10FL2CZ47A,10GL2CZ47A Unit in mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM=200, 300, 400V

DIODE MARKING EJL

Abstract: SF20LC40M F20LC40 F20LC
Contextual Info: Super Fast Recovery Diode Twin Diode W tm SF20LC40M OUTLINE 400V 20A Feature • 77JIÆ— JU • Full Molded • I fijf B ± 2kV SIŒ • Dielectric Strength 2kV •1SVf=1.3V « L o w Vf=1.3V • Tj'=150°C • Tj=150°C Main Use • T . 'f • Switching Regulator

Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE SF20LC40M Package : FTO-220A Unit:mm Weight lJ9g Typ> 400V 20A 4.5 Feature y i/= E -Ji F • m ttm s 2 kv ( s u • Full Molded • V f =1.3V • Low V f=1 .3V • Tj=150°C • • Tj=150°C • Dielectric Strength 2kV