DIODE 400V 4A Search Results

TSC5304D

Abstract: power transistor Ic 4A NPN to - 251 TSC5304DCH TSC5304DCP TS530 NPN Transistor 10A 400V TSC5304 ic 565 pin diagram
Contextual Info: Preliminary TSC5304D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 4A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti

pin diagram of ic 4440

Abstract: IC 0116 DC TSC5305D TSC5305DCM TSC5305DCZ ic 4440 transistor Vceo 400V, Vebo 9v, Ic 10A
Contextual Info: Preliminary TSC5305D High Voltage NPN Transistor with Diode TO-263 Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 5A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti

TSC5304D

Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

5210 diode

Abstract: NPN Silicon Power Transistor DPAK npn transistors 400V low power TSC5304D TSC5304DCH TSC5304DCP C5 MARKING TRANSISTOR L 0814 CW68
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 2.5A / 0.5A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

marking c08

Abstract: C08 marking 250V transistor npn 2a BM 0228 marking code C5 power transistor Ic 4A NPN to - 251 1A MARKING CODE C5 MARKING TRANSISTOR marking code B2 NPN Silicon Power Transistor DPAK
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

TP 1078

Abstract: transistor 926
Contextual Info: TSC128D High Voltage NPN Transistor with Diode TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter TO-263 2 D PAK PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

TSC5304ED

Abstract: power transistor Ic 4A NPN to - 251 TSC5304EDCP transistor c10 TO-252 marking C10 marking C10
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC 4A VCE(SAT) Features ● 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

Contextual Info: n - n x V 'C X -Y - Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS D4L40 400V 4A • t r r 50ns m m •SRSÎÜ •75-rjn -f-ju •^ B s O A .P ,^ • i l i â s FA RATINGS Absolute Maximum Ratings a i 5 E-fSymbol Conditions a Item Storage Temperature

Contextual Info: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LC40 400V 8A H S S 'iX >trr50ns >SRS;H > ^ B s O A w0 , ^ m iB s F A RATINGS Absolute Maximum Ratings a i s E-fSymbol Conditions a Item Storage Temperature Operating Junction Temperature

Contextual Info: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LD40 400V 8A H S S 'iX >trr50ns >SRS;H > ^ B s O A w0 , ^ m iB s F A RATINGS Absolute Maximum Ratings a i s E-fSymbol Conditions a Item Storage Temperature Operating Junction Temperature

SHINDENGEN DIODE

Contextual Info: Super Fast Recovery Diode Single Diode UHM' vi& E l OUTLINE DIMENSIONS D4L40 Case : ITO-220 ' 400V 4A •ffiy -r x # trr5 0 n s 0.7 •S R C Ü • 7U • * « . OA, p.?« •an. a « , fa • Ê të ft RATINGS A bsolute M ax im u m Ratings m S ym bol m & tft

con8a

Abstract: L5973 L7805 TO220 varistor 2k2 varistor C21 2u55 STPS20 HCF401 U26A NTC 2.2 varistor
Contextual Info: 5 4 3 2 C1 L1 15mH D1 R12 T5 TRANSFORMER 1 C2 4 - 100n 400V + 1 1 D D7 4 1 C21 1n 1k 100n 400V t R1 t CON2 FUSE Varistor 2 1 3 J22 2 DIODE BRIDGE F1 F D 3 2 N C3 220u 450V NTC 16 ohm C4 STPS8H100 TRANSIL D8 10n 600V 12 +13.8V 4 20K 6W Cout1 330u 6 D5 C38 330u

Contextual Info: PD-2.470 International iïôRiRectifier HFA80NK40C Ultrafast, Soft Recovery Diode HEXFRED" BASE COMMI3N CATHODE Features Vr = c • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters 400V VF = 1.3V Qrr * = 500nC

Contextual Info: International S Rectifier PD-2.452 HFA180NH40 Ultrafast, Soft Recovery Diode HEXFRED" LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters ? I T V r = 400V V f = 1.35V Qrr * = 2600nC

D4L40

Contextual Info: □ — n ^ S T -T * — K m tm . Super Fast Recovery Diode Single Diode O U T L IN E D IM E N S IO N S D4L40 400V 4A • fctem R A T IN G S Absolute Maximum Ratings s m Item Symbol un&m it- ~-— O perating J u n c tio n Tem perature Maximum Reverse Voltage

Contextual Info: y PD-2.468 International [tor]Rectifier HFA90NH40 Ultrafast, Soft Recovery Diode HEXFRED LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V r = 400V 1 ▼ T VF = 1.3V Qrr* = 1200nC

Contextual Info: PD-2.474 bïtemational [torjRectifier HFA75MC40C Ultrafast, Soft Recovéry Diode HEXFRED Features V r = 400V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V f = 1.3V Qrr * = 500nC ANODE COMMON ANODE

Contextual Info: Preliminary Data Sheet PD-2.453 International ¡Rectifier [KSR HFA240NJ40C HEXFRED Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE 1 Features LUG TERMMAL AN O DE2 Vr = 400V • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters

Contextual Info: PD-2.473 International [ìq r ì Rectifier HFA80NC40C Ultrafast, Soft Recovery Diode HEXFRED" BASE COMMON CATHODE Features V r = 400V c • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters I 1' J V F = 1.3V _ Qrr*

Contextual Info: PD-2.471 bitemational ^Rectifier HFA80NC40CSM Ultrafast, Soft Recovery Diode HEXFRED BASE COMMON CATHODE Features V r = 400V cJ • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters I , -H 1 V F = 1 .3 V Qrr * = 5 0 0 n C

Contextual Info: PD-2.472 International ^R ectifier HFA80NC40CSL Ultrafast, Soft Recovery Diode HEXFRED BASE COMMON CATHODE Features VR = 400V O • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V f = 1.3V Qrr * = 500nC d i r e c M / d t *

Contextual Info: □ - □ 3 . Super Fast Recovery Diode Single In-line Package OUTLINE DIMENSIONS D4SBL40 400V 4A • i& M X • S IP A ° y !r —V • m I FSM m • S R S ÎÜ •TVs m m •O A s FA RATINGS Absolute Maximum Ratings a Item Storage Temperature Operating Junction Temperature

fast recovery diode 400v 5A

Contextual Info: ESC011M-15 5A (1500V / 5A, 400V / 5A ) Outline drawings, mm 15.5 ±0.3 2.1±0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 3.5 ±0.2 0.6 +0.2 1. Gate 2. Drain 3. Source JEDEC High voltage by mesa design 3.2 +0.3 20 Min Damper diode for high definition T.V. and