DIODE 400V 6A Search Results

SR506 Diode

Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Contextual Info: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41

HFA80NC40C

Contextual Info: PD -2.473 rev. B 01/99 HFA80NC40C TM Ultrafast, Soft Recovery Diode HEXFRED VR = 400V Features VF typ. ƒ = 1V • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters IF(AV) = 80A Qrr (typ.) = 200nC IRRM(typ.) = 6A

HFA75MC40C

Abstract: IRFP250
Contextual Info: PD -2.474A HFA75MC40C Ultrafast, Soft Recovery Diode HEXFRED TM Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters 1 ANODE 1 2 COMMON CATHODE 3 ANODE 2 VR = 400V VF(typ.)ƒ = 1V IF(AV) = 75A

2475A

Abstract: D-60 HFA75MB40C IRFP250
Contextual Info: PD -2.475A HFA75MB40C HEXFRED Ultrafast, Soft Recovery Diode TM Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters (1-3) ANODE 1 (4-6) COMMON CATHODE (7-9) ANODE 2 VR = 400V VF(typ.)ƒ = 1V

smd 471a

Abstract: HFA80NC40CSM IRFP250
Contextual Info: PD -2.471A HFA80NC40CSM HEXFRED Ultrafast, Soft Recovery Diode TM BASE COMMON CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters 1 ANODE 1 2 COMMON CATHODE 3 ANODE 32 VR = 400V VF typ. ƒ = 1V IF(AV) = 80A

HFA80NC40CSL

Abstract: SLD61-8
Contextual Info: PD -2.472 rev. B 01/99 HFA80NC40CSL TM Ultrafast, Soft Recovery Diode HEXFRED VR = 400V VF typ. ƒ = 1V IF(AV) = 80A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.)ƒ = 190A/µs Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of

SLD61-8

Abstract: HFA80NC40CSL IRFP250 T 01-40
Contextual Info: PD -2.472A HFA80NC40CSL HEXFRED Ultrafast, Soft Recovery Diode TM BASE COMMON CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters 1 ANODE 1 2 COMMON CATHODE 3 ANODE 2 VR = 400V VF typ. ƒ = 1V IF(AV) = 80A

B-3067

Abstract: HFA80NC40C IRFP250
Contextual Info: PD -2.473A HFA80NC40C HEXFRED Ultrafast, Soft Recovery Diode TM BASE COMMON CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters 1 ANODE 1 2 COMMON CATHODE 3 ANODE 2 VR = 400V VF typ. ƒ = 1V IF(AV) = 80A

HFA80NC40CSM

Contextual Info: PD -2.471 rev. B 01/99 HFA80NC40CSM TM HEXFRED Ultrafast, Soft Recovery Diode VR = 400V VF typ. ƒ = 1V IF(AV) = 80A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.)ƒ = 190A/µs Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of

HFA80NK40C

Abstract: IRFP250
Contextual Info: PD -2.470A HFA80NK40C HEXFRED Ultrafast, Soft Recovery Diode TM BASE COMMON CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters 1 ANODE 1 2 COMMON CATHODE 3 ANODE 2 VR = 400V VF typ. ƒ = 1V IF(AV) = 80A

6A4 DIODE

Abstract: AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2 1N4002
Contextual Info: DIODE RECTIFIERS • 1.0A THRU 6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3.0 3.0 6.0 @ TEMP "C 25 25 25 25 25 SURGE (A) 50 50 200 150 400 50V 1N4001 J-05 RL251 1N5400 6A-05 100 V 1N4002 0-1 RL252 1N5401 6A-1 200V 1N4003 J-2 RL253 1N5402 6A-2 400V 1N4004

Contextual Info: SQ.i.p.sa Square In-line Package Bridge Diode • Avalanche type O U T L IN E D IM E N S IO N S D5FBDZ 400V 6A Unit ^ mm Weight - 18g ■ R A TIN G S A bsolute Maximum R atings IB # a m ~ ~ ~ ~ ~ ~ — -T yp e l H —— — H Z. Symbol p C ond itions

Contextual Info: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters

G6N50E1D

Abstract: hGtp6N50E1D G6N50E1 G6N50 HGTP6N40E1D G6N50E
Contextual Info: HGTP6N40E1D, HGTP6N50E1D S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER COLLECTOR GATE • Latch Free Operation • TFALL: < 1.0µs • High Input Impedance

Contextual Info: TM FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQB6N40CF

Abstract: FQB6N40CFTM
Contextual Info: FRFET TM FQB6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

MOSFET 400V TO-220

Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF FQPF Series
Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQP6N40CF

Contextual Info: FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

FQPF Series

Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF N-Channel mosfet 400v to220
Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: HARRIS SENICON] SECTOR CIS Ha r r is W SEMICONDUCTOR b6E D • M3Q2S71 Q05025H 413 « H A S HGTP6N40E1D HGTP6N50E1D 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Packages Features JEDEC TO-220AB TOP VIEW • 6 Amp, 400 and 500 Volt

N50E

Abstract: TRANSISTOR N50E
Contextual Info: i l i h iA R R is HGTP6N40E1D HGTP6N50E1D SEMICONDUCTOR 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Features Packages JEDEC TO-220AB TOP VIEW • 6 Amp, 400 and 500 Volt • Latch Fra« Operation • Typical Tfall < 1.0^8

G6N50E1D

Abstract: G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor
Contextual Info: HGTP6N40E1D, HGTP6N50E1D d ì H a r r is \MÌ S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER • Latch Free Operation COLLECTOR GATE • T f a l l : < 1.0|iS

BUS11A PHILIPS SEMICONDUCTOR

Contextual Info: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV