DIODE 409 LM Search Results

T408F

Abstract: T101f T408 URM 95 tv 256 diode
Contextual Info: A E G- AK TI EN GE S E L L S C H A F T Ö1C D H 005^415 0005T03 T • AE6<5 T 408 F T 409 F Typenreihe/Type range T408F T409F 600 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Udhm. Urrm Periodische Vorwärts-und Rückwärts-Spitzensperrspannung

AEG T 408

Abstract: T408F 25CC T408 40f11 ALPS ugt aeg tt AEG T 178
Contextual Info: 0029426 A E G CORP ai DE I D D a c14Eb 0 0 0 5 ^ 0 3 5 | T408 F T409 F Typenreihe/Type range T408F T409F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Udrm. Urrm P e rio d is c h e V o rw ä rts -u n d Maximum permissible values R ü c k w ä rts -S p itz e n s p e rrs p a n n u n g

DIODE 409 LM

Abstract: TP20
Contextual Info: SIEMENS SFH 409 INFRARED EMITTER Maximum Ratings FEATURES • Radiant Intensity Selections SFH 409*1, 6.3-12.5 mW/sr SFH 409-2, ¿10 mW/sr • High Reliability • T1 3 mm Package • .100” (2.54 mm) Lead Spacing • High Pulse Power • Long Term Stability

D03316P-472

Abstract: up 6261 CHIP T 409 ES 20-PIN EL7564 EL7564CM EL7564CRE VJ0805Y104KXXA 330uF 35 v capacitor el75xx
Contextual Info: ES EW D Using the EL7564 Demo Board IGNS OR N ED F 5 4 D N M M E E E E L7 5 EC O Technical Brief S R T NO May 23, 2003 Introduction TB409 This demo board is operated at about 350kHz switching frequency. The input voltages are 4.5V to 5.5V. This document outlines the design consideration and lists the bill

dg4080y

Abstract: DG40S 10501 ot 409 DG408 DG408AK DG408DJ DG409 DG409DY HP3571A
Contextual Info: DG408/409 “ ¿l&Z8-Channel/Dual 4-Channel High Performance CMOS Analog Multiplexers FEATURES BENEFITS APPLICATIONS • Low id s on (100 f l max) • low Charge Injection • Reduced Switching Errors • Reduced Glitching • Data Acquisition Systems • Audio Signal Routing and

EM 4093

Contextual Info: bOE D ÔS35büS ÜQ4titi07 3 m ISIEG T^/-// SFH 409 SIEMENS INFRARED EMITTER SIEMENS AKTIENÛESELLSCHAF Package Dimensions in Inches mm Surface not flat - 204 (5 2) 177 (4 5) 024 (.6) .0 1 6 ( 4 ) 100 (2 54) .0 2 8 (7 ) 0 1 6 (4 ) f L a 1 2 2 (3 1) h w 114 (2 9 )

sfh diode

Abstract: sfh siemens Hall Siemens
Contextual Info: SIEMENS SFH 409 INFRARED EMITTER FEATURES Maximum Ratings • Radiant Intensity Selections SFH 409-1, 6 .3 -1 2.S mW/sr SFH 409-2, 1 0 -2 0 mW/sr SFH 409-3, ¿16 mW/sr Operating and Storage Temperature Range Top, TSTe . -55° to +100“C

EM 4093 001

Abstract: EM 4093 sr 160 DIODE
Contextual Info: SIEMENS SFH 409 INFRARED EMITTER Package Dimensions in Inches mm 2 0 4 (5 2 ) .0 2 4 ( 6) .0 1 6 (4 ) 028 ( 0 1 6 (4 ) 031 <•«) 0 1 6 (4 ) 100 (2 S4) 071 (1 8 ) 0 4 7 (1 2) 1 14 0(29) 1 0 6 1 (2 7 ) FEATURES Maximum Ratings • Radiant Intensity Selections

Contextual Info: SFH 409 SIEMENS INFRARED EMITTER Package Dimensions in Inches mm 204 (5 2) 024 ( 6) 0 1 6 (4 ) 1S7 (4 0) 141 (3 6) 028 ( 7) 0 1 6 (4 ) *122(3 1) 100 (2 54) 114(2 9) 024(6)11 071 (1 6) 047(1 2) 0 1 6 (4 )^ ^ ^ 1 140(29) 1.061 (27) FEATURES M a x im u m R atings

Contextual Info: 3DE P • 7^ 5 3 7 OQgqflqi S G S -T H O M S O N I Li(g?GMO(gS 4 ■ n _ r 3 <ì - i S s~ T ì ^ hoMSo n — SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS30MA050D1 • • • • • VDSS 500 V ^DS(on 0.20 ß 30 A ISOLATED POWERMOS MODULE

409LT

Abstract: marking 9l sot23
Contextual Info: SILICON EPICAP DIODES MMBV409LT1* . . . desig n ed fo r general fre q u e n cy c o n tro l and tu n in g a p p lic a tio n s ; p ro v id in g so lid -sta te re lia b ility in re p la ce m en t o f m echanical tu n in g m ethods. MV409* • H igh Q w ith G uaranteed M in im u m Values at VHF Frequencies

powerex scr

Abstract: powerex cd62 powerex cd67 c067
Contextual Info: CD62_ _ 15 CD67 15_ P jmerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Module 150 Amperes/1600 Volts C D 6 2 _ _ 1 5, C D 6 7 _ _ 1 5 S C R /D io d e P O W -R -B L O K ™ M o d u le 150 Amperes/1600 Volts

local osc ic ta7640ap

Abstract: am mixer ic ta7640ap toshiba 17255 FM FRONT bpw B6A TA7640AP ta7640 TA7371 10.7ma5 sumida ift coil TA7371AP
Contextual Info: n M 90 97 24 7 TOSHIBA. ELECTRONIC 02E 17246 D TA7371AP/AF T - 1 7 - 0 5 - 0 5 FM FRONT-END 1.5V USE Unit in mm The TA7371AP/AF are FM "FRONT END ICs designed for TA7371AP low voltage operation (1.5V), which are suitable for 2& 0 MAX 01.0 Stereo Headphone Radio or Radio Cassette.

2SK408

Abstract: POWER MOS FET 2sk408 2SK409 VM-50V D15mm
Contextual Info: blE » • 4^1=205 0013055 033 ■ HITM 2SK408,2SK409 HI T ACH I/{OPTOELECTRONIC S IL IC O N N -C H A N N EL M O S F ET 2SK408 HF/VHF POWER AMPLIFIER 2SK409 IE ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Included Gate Protection Diode.

Contextual Info: MG150J7KS50 TOSHIBA MG1 50J7KS50 TO SH IBA GTR MODULE SILICON N CHAN N EL IGBT HIGH POW ER SW ITCHING APPLICATIO NS MOTOR CO N TRO L APPLICATIO NS The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs B uilt into 1 Package. Enhancement-Mode H igh Speed Type IGBT Inverter Stage

12V dc to 60V dc circuit diagram

Abstract: IC LM 317 LM-1952
Contextual Info: CS8240 CS8240 500mA High Side PNP Driver with On-Chip Flyback Diode Description The CS8240 is a fast, PNP high side driver capable of delivering up to 500mA into a resistive or inductive load in harsh automotive or industrial environments. An internal flyback

IC LM 317

Abstract: CS8240 transistor LM 317
Contextual Info: CS8240 CS8240 500mA High Side PNP Driver with On-Chip Flyback Diode Description The CS8240 is a fast, PNP high side driver capable of delivering up to 500mA into a resistive or inductive load in harsh automotive or industrial environments. An internal flyback

LM-1952

Abstract: L9350 current limit switch 12V 12V dc to 60V dc circuit diagram
Contextual Info: CS-8240 CS-8240 500mA High Side PNP Driver with On Chip Flyback Diode Description The CS-8240 is a fast, PNP high side driver capable of delivering up to 500mA into a resistive or inductive load in harsh automotive or industrial environments. An internal flyback

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

049G1

Contextual Info: PHOTO RELAY TLP595A T L P 5 9 5 A TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP595A consists of an alum inum gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package.

IRF9520N

Abstract: IRFI9520N
Contextual Info: PD - 9.1527 IRFI9520N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS on = 0.48Ω

LTspice

Abstract: 23/zoom 505 schematic
Contextual Info: M A NU A L , M E T HO D S A ND A P P L I CAT I O N S SIMULATOR THE LTSPICE IV THE LTSPICE IV 1st edition Swiridoff Verlag ISBN: 978-3-89929-258-9 SIMULATOR GILLES BROCARD MANUAL, METHODS AND APPLICATIONS Preface by Mike Engelhardt 1st edition Preface It is an honor to write a preface for Gilles Brocard. I appreciate his work writing this book and hope you benefit from

IRFI1310N

Abstract: irfi1310 IRF1310N 4.5v to 100v input regulator
Contextual Info: PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V RDS on = 0.036Ω G Fifth Generation HEXFETs from International Rectifier

IRF1310N

Abstract: IRFI1310N 4.5v to 100v input regulator
Contextual Info: PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V RDS on = 0.036Ω G Fifth Generation HEXFETs from International Rectifier