DIODE 429 IK Search Results

f 0472 N-Channel MOSFET

Abstract: hrf3205 mosfet HRF3205
Contextual Info: HRF3205, HRF3205S in te ik il J u n e 1999 Data S h e e t 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

Contextual Info: Temic DG428/429 Semiconductors Single 8-Ch/Differential 4-Ch L atchable Analog Multiplexers Features Benefits Applications • Low roS 0n : 55 Q • Low Charge Injection: 1 pC • On-Board TTL Compatible Address Latches • H ighspeed—tjR ans : 160 ns • Break-Before-Make

7698

Contextual Info: Tem ic DG428/429 S e m i c o n d u c t o r s Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers. Features Benefits • L o w rDS 0n : 55 Q • Im proved S ystem A ccuracy • • L ow C harge Injection: 1 pC • M icroprocessor B us C om patible •

schematic diagram welding inverter

Abstract: schematic diagram welding inverter control DG428 DG428AK DG428DJ DG428DN DG429
Contextual Info: S ilic o n ix DG428/429 A M e m b e r of th e TBM1C G ro u p Single 8-Channel/Differential 4-Channel Latchable Analog M ultiplexers Features Benefits Applications • Low iDs on : 55 Q • Low Charge Injection: 1 pC • On-Board TTL Compatible Address Latches

diode 429 IK

Contextual Info: □ - □ 3 . V 'C X - Y Super Fast Recovery Diode Twin Diode mn?â Surface Mount OUTLINE DIMENSIONS DF20LC20U Unit • mm Package I STO-220 10 9 ± -9- 200V 20A >SMD m s 'i'x > trr35n s >SRSÜ > D C /D C ® > 7 5 ^ * -f-J b 2 @ (D >^BsOAw0,^ K H s . FA

X328 transistor

Abstract: scx6206 transistor x328 SCX6218 SCX6225 MEA 2901 x328 SCX6244 scx6232 SM8250A
Contextual Info: WjWM National /¡/m Semiconductor mUm Corporation Description of Gate Arrays and Standard Cells National Semiconductor’s CMOS Gate Arrays and Standard Cells utilize a dual layer metal technology microCMOS to achieve operating speeds similar to Schottky-TTL integrat­

ESM4045AV

Abstract: ESM4045A FASTON ESM4045D CSA50 4045D
Contextual Info: N AMER PHILIPS/DISCRETE bl E D • bb5 3 ^ 3 ]> D Q E â b 0 3 344 *APX ESM4045A V ESM4045D(V) SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).

2sk1461

Abstract: 34641
Contextual Info: 2SK1461 2056 U H U ltra h ig h V o lta g e S eries V OSs = 9 0 0 V N Channel P o w er M O S F E T F eatures •Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss

150LA20A

Abstract: 250LA20A transistor b1068 480LA80A B1064 180kd07 mov 680kd14 471KD07 mov 200LA20A 230LA40A
Contextual Info: EDAL INDUSTRIES, INC. 51 COMMERCE STREET * EAST HAVEN, CONNECTICUT 06512 * TELEPHONE 203 -467-2591 * FAX (203)-469-5928 Internet: http://www.eemonline.com/edal Email: edalind@aol.com FEATURES APPLICATIONS A wide protecting voltage range. Low leakage current in Preparatory State.

Contextual Info: SIEMENS Silizium-4-Quadranten-Fotodiode Silicon Four Quadrant Photodiode SFH 244 S Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche M erkmale Features • • • • Speziell geeignet für Anwendungen im

74hctls

Abstract: KS74HCT KS74HCTL kss4h
Contextual Info: SAMSUNG SEMICONDUCTOR INC 05 D E | 7 cit3m 145 O D O b S ñ b ñ | j ‘L - KS54HCTLS f ì Q KS74HCTLS u o Quad 2-Input A N D Gates -DESCRIPTION FEATURES • Function, pin-out, speed and drive compatibility with S4/74LS logic family • Low power consumption characteristic of CM OS

RADIOTRON

Abstract: GE SCR 1000 AMP ST-12 1 watt diode 15 Amp current 1000 volts metal diode Scans-0017344
Contextual Info: RADIOTRON 1K6 D U O -D IO D E PENTODE Filament Voltage Current Maximum Overall Lengtft Maximum Diameter Bulb Cap Mounting Position Coated 2.0 0 .1 2 d-c volts amp. 4-15/16" 1-9/16" ST-18 Small Metal Any Base Pin 1-Filament ♦ Pin 2-Plate „ Pin 3-Diode Plate r S

IRF3805

Abstract: IRF3805LPBF AN-994 IRF530S IRF3805PBF
Contextual Info: PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D

AN-994

Abstract: IRLZ44Z IRLZ44ZL IRLZ44ZS
Contextual Info: PD - 95539 IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

Contextual Info: TC74LVX374F/FW/FS OCTAL D-TYPE FLIP FLOP WITH 3-STATE OUTPUT The TC74LVX374 is a high speed CMOS O CTAL D-FLIP FLOP fabricated with silicon gate C2MOS technology. Designed for use in 3.3 Volt systems, it achieves high speed operation w hile m aintaining the CMOS low power

ic 74hc245

Abstract: 74hc245 PIN DIAGRAM 74HC245 HC245 h 54HC643 74HC245M HC245
Contextual Info: / T T SCS-THOMSON * 7 # u R{flDW[l[L[lOT liiflD i M54HC245/640/643 M74HC245/640/643 OCTAL BUS TRANSCEIVER 3-STATE HC245 NON INVERTING, HC640 INVERTING, HC643 INVERTING/NON INVERTING PRELIMINARY DATA • HIGH SPEED tpo = 11 ns (TYP.) at V c c = 5V ■ LOW POW ER DISSIPATION

T74LS266B1

Contextual Info: S G S-THOMSON Ü 7 E D I 7^2^237 QDlti2Lil 5 J LOW POWER SCHOTTKY INTEGRATED CIRCUITS Ai - 67C16390 T54LS266 T74LS266 Ì T -tz -tS D QUAD 2-INPUT EXCLUSIVE NOR GATE DESCRIPTION The T54LS266/T74LS266 Is a high speed QUAD

23G102k

Abstract: 15G121K 15g102k tnr g 180k 12G102K tnr 15g 471k varistor 152k
Contextual Info: METAL OXIDE VARISTORS TN R Marcon TNR Metal Oxide Varistors are voltage dependent, symmetrical resistors which perform in a manner similar to back-to-back zener diodes in circuit protective functions and offer advantages in performance and economics. When ex­

IRF3805LPBF

Abstract: IRF3805 IRF3805PBF
Contextual Info: PD - 97046B IRF3805PbF IRF3805SPbF IRF3805LPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 3.3mΩ

Contextual Info: PD - 97046 IRF3805PbF IRF3805SPbF IRF3805LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D

Contextual Info: PD - 96988 IRF2903Z IRF2903ZS IRF2903ZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 30V RDS on = 2.4mΩ

IRF2903Z

Abstract: IRF2903ZL IRF2903ZS
Contextual Info: PD - 96988A IRF2903Z IRF2903ZS IRF2903ZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 30V RDS on = 2.4mΩ

IRF3805LPBF

Abstract: AN-1005 IRF3805 IRF3805PBF
Contextual Info: PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D

Contextual Info: PD - 95539A IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 55V