DIODE 433 Search Results

BA792

Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:

SMD diode sg 46

Abstract: SMD diode sg 03
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS

SMD MARKING 541 DIODE

Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF

diode a62

Abstract: BAP51-03 diode smd ED 74 lm 9805
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance

Contextual Info: N AUER PHILIPS/DISCRETE b'iE D • bbSBTBl D0Eb2Eb 433 BAS45 LOW LEAKAGE DIODE Switching diode with a very low reverse current, encapsulated in a subminiature glass DO-34 envelope. QUICK REFERENCE DATA Continuous reverse voltage vR max. 125 V Forward voltage

NX8570SD

Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Contextual Info: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

1583 Series

Abstract: 362d 766d
Contextual Info: LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

362d

Abstract: 601 Opto isolator 766d transistor NEC D 587 315D 346D 377D 409D
Contextual Info: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

362d

Abstract: 315D 346D 377D NX8570SA b 803 a NX8570SD 933D 618D
Contextual Info: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

Hitachi DSA002726

Contextual Info: HL1553 1.55 µm Laser Diode with EA Modulator Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a

362d

Abstract: 315D 346D 377D NX8571SA
Contextual Info: DATA SHEET LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

537D

Contextual Info: DATA SHEET LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

Contextual Info: N AflER PHILIPS/DISCRETE b^E D m bb53^31 DDSb4b5 53b IAPX BY328 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television

HL1569AF

Abstract: ld501 Hitachi DSA0047
Contextual Info: HL1569AF 1.55 µm Laser Diode with EA Modulator ADE-208-834A Z 2nd Edition Dec. 2000 Description The HL1569AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is

Contextual Info: DIODE MODULE DD250HB UL;E76102 M Power Diode Module D D 250H B series are designed for various rectifier circuits. D D 250H B has two diode chips connected in series in a package and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

Philips diode tFR

Abstract: BY328 BY-328
Contextual Info: SLE ]> PHILIPS INTERNATIONAL 711DÔ2b 0040441 bbT • PHIN BY328 SbE D T -O t ' 1 7 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television

electroabsorption

Abstract: ld501 DFB ea HL1553 Hitachi DSA00230 2488-32
Contextual Info: HL1553 1.55 µm Laser Diode with EA Modulator ADE-208-395B Z 3rd Edition Dec. 2000 Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as

HIGH VOLTAGE DIODE 20kv 1A

Abstract: Pulse generator circuit 20KV DIODE HIGH VOLTAGE DIODE 20kv 20KV TVR-20 0b7b743
Contextual Info: AMERICAN/ELECTRONIC b3E J> • 0b7b743 Q001D15 433 mZT>I HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE—TVR 20 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for

10 gb laser diode

Abstract: Hitachi DSA0095 HL1513AF
Contextual Info: HL1513AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1406 Z Preliminary 1st Edition Feb. 2001 Description The HL1513AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is

hitachi sr 2001

Abstract: HL1513AF LD501 10 gb laser diode Hitachi DSA0047
Contextual Info: HL1513AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1406 Z Preliminary 1st Edition Feb. 2001 Description The HL1513AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is

smf80km

Abstract: Hitachi DSA00280
Contextual Info: HL1511AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1405A Z Rev.1 Feb. 2002 Description The HL1511AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is

hitachi sr 2001

Abstract: HL1511AF 10 gb laser diode Hitachi DSA0047
Contextual Info: HL1511AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1405 Z Preliminary 1st Edition Feb. 2001 Description The HL1511AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is

10 gb laser diode

Abstract: Hitachi DSA0095 HL1511AF diode hitachi
Contextual Info: HL1511AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1405 Z Preliminary 1st Edition Feb. 2001 Description The HL1511AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is