DIODE 442 Search Results

ZLLS400

Abstract: ZHCS400 ZLLS400TA ZLLS400TC Schottky Diode 40V 1A
Contextual Info: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10mA DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low

RLTMDL_442_1-50MW

Contextual Info: RLTMDL-442 1-50 mW Blue Laser Diode Modul Blue diode laser module at 442nm is made features of ultra compact, long lifetime, low cost and easy operating, which is used in measurement, communication, spectrum analysis, etc. Specifications Wavelength Output Power

ZLLS400

Abstract: ZHCS400 ZLLS400TA ZLLS400TC FSM12
Contextual Info: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low

ZLLS400

Abstract: IR610 ZHCS400 ZLLS400TA ZLLS400TC
Contextual Info: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

Schottky Diode 40V 2A

Abstract: marking ma sot23-6 ZHCS2000 320 sot236 ZLLS1000TA ZLLS1000TC ZLLS2000 marking L10
Contextual Info: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage

ZLLS1000

Abstract: Diode 20A/30v ZHCS1000 ZLLS1000TA ZLLS1000TC
Contextual Info: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low

ZHCS2000

Abstract: ZLLS2000 ZLLS2000TA ZLLS2000TC LL-20 DIODE SCHOTTKY 40V 500MA marking ll20
Contextual Info: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage

L05 diode

Abstract: ZLLS500 MARKING L05 ZHCS500 ZLLS500TA ZLLS500TC
Contextual Info: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low

L05 diode

Abstract: ZLLS500 ZHCS500 ZLLS500TA ZLLS500TC 8-NP
Contextual Info: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low

4420 Transistor

Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

ZHCS1000

Abstract: ZLLS1000 ZLLS1000TA ZLLS1000TC
Contextual Info: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low

Contextual Info: L L 46 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.

Contextual Info: [ UTZ-SC0284_5 ] 2012/10/02 Blue Laser Diode NDB4116   Features Outline Dimension • Optical Output Power: CW 100mW • Can Type: 5.6 mm Floating Mounted with Photo Diode and Zener Diode Unit mm ( Item Symbol Optical Output Power Po Absolute

modulator circuit

Abstract: BY438 Philips diode tFR
Contextual Info: N AMER PHILIPS/ DISCR ETE bRE » • bbS3131 D0Eb471 2HT ■ APX BY438 A PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as efficiency diode in transistorized horizontal deflection circuits of television receivers. The

Contextual Info: N AMER PHILIPS/DISCRETE bbS3131 D0Eb471 £4^ « A P X bRE » A BY438 PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television receivers. The

ALPs modulator

Abstract: BY438 diode BY438 JI75 TRANSISTOR D 819
Contextual Info: SbE ]> 7110ÖSL 0 040 45 1 SOfl • P H I N BY438 P H IL IP S INTERNATIONAL T-OI-is SbE D PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television receivers. The

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

BAS19

Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol

ZHCS2000

Abstract: Schottky Diode 40V 2A ZHCS2000TA ZHCS2000TC DSA003728
Contextual Info: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6

ZS20

Abstract: ZS20 SOT23 MARKING T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC
Contextual Info: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6

T1 SOT23-6

Abstract: T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC marking e1 diode
Contextual Info: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS720MC ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V; RSAT = 104m ; C = -3A

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS718MC ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A